MwT-0618S-4N2/0618Z-4N2
6.0-18.0 GHz Balanced Amplifier Module
www.mwtinc.com
Email: info@mwtinc.com
TYPICAL SPECIFICATIONS AT 25 C
14.0 dBm P-1dB
8.0 dB SMALL SIGNAL GAIN
15.0 dB INPUT/OUTPUT RETURN LOSS
40 mA @ +8V
USES TWO MwT-4LN GaAs FET DEVICES
4.0 dB NOISE FIGURE
6.0
5.0
4.0
3.0
2.0
6
12
Frequency (GHz)
18
9.0
8.0
7.0
6
12
Frequency (GHz)
18
ELECTRICAL SPECIFICATIONS
SYMBOL
FREQ
SSG
G/ F
G/ T
P-1dB
PSAT
P/ T
IP3
2nd HAR
2nd HAR
NF
VSWR IN
VSWR OUT
ISO
VDD
IDD
RTH
PARAMETERS
(Ta=25 C)
UNITS
GHz
dB
+/-dB
dB/ C
dBm
dBm
dB/ C
dBm
dBc
dBc
dB
-----
-----
dB
+V
mA
C/W
MIN
6.0
7.5
TYP
MAX
18.0
8.0
0.4
-.012
14.0
16.0
-.008
25.0
-21.0
-16.0
4.0
1.5:1
1.5:1
-20.0
8.0
40.0
216.0
0.6
Frequency Range
Small Signal Gain
SSG Flatness
SSG Variation over Temperature
Output Power at 1dB Compression
Output Power at 6 dB Compression
P-1dB Variation over Temperature
Third Order Intercept Point
2nd Harmonic at Pout=14.0 dBm
2nd Harmonic at Pout=16.0 dBm
Noise Figure
Input VSWR
Output VSWR
Reverse Isolation
Power Supply Voltage
Small Signal Module Current
Thermal Resistance Including FET*
Typical Noise Figure
(dB)
Typical Small
Signal Gain (dB)
11.0
4.5
1.7:1
1.7:1
8.1
60.0
7.9
* When calculating Tch, use FET Vds = 4.0 volts and FET ds = 20mA
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
MwT-0618S-4N2/0618Z-4N2
6.0-18.0 GHz Balanced Amplifier Module
.184
www.mwtinc.com
.088
.184
.088
.062
.158
.246
.246
Email: info@mwtinc.com
O
O
.110
O
DC
.095
RF OUT
.062
.158
.025
DC
.095
.041
.08
.055
Max.
w/Caps
& Bond
Wires
O
.110
RF IN
.08
.08
RF IN
.08
RF OUT
.390
.500
.405
DC
.390
.500
.405
DC
1. Dimension in Inches
2. Tolerance:
XXX= +/- .005
XX= +/- .01
“S”
Configurations
“Z”
Construction:
Construction
The 15 mil alumina substrates and 10 mil copper FET ridge are brazed onto the 25
mil carrier using AuGe preform. The GaAs FETs are attached to the Cu ridge
using AuSn preform. All capacitors are attached using AuSn preforms. The
flanges are designed to accommodate 0-80 UNF-2A socket or Fillister head
screws on .400 center-to-center hole spacing. The modules are mechanically and
electrically designed to be cascaded.
Notes:
1. Custom module specifications and/or custom module mechanical configurations are available.
2. Operating Temperature Range is -55 degrees Celsius to +105 degrees Celsius.
3. All modules are serialized and shipped with data measured at 25 degrees Celsius. Data
includes swept small signal gain, swept input and output return loss. Noise figure and P-1dB
are measured in 1 GHz increments. Special module testing is available.
4. Test Fixtures are available.
5. Microwave Technology reserves the right to ship modules with performance above the
typical specifications.
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
