GS881Z18/32/36B(T/D)-xxxV
100-Pin TQFP & 165-Bump BGA
Commercial Temp
Industrial Temp
Features
• User-configurable Pipeline and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization
• Fully pin-compatible with both pipelined and flow through
NtRAM™, NoBL™ and ZBT™ SRAMs
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 1.8 V or 2.5 V core power supply
• 1.8 V or 2.5 V I/O supply
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2M, 4M, and 18M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ pin for automatic power-down
• JEDEC-standard packages
• RoHS-compliant 100-lead TQFP and 165-bump BGA
packages available
9Mb Pipelined and Flow Through
Synchronous NBT SRAM
250 MHz–150 MHz
1.8 V or 2.5 V V
DD
1.8 V or 2.5 V I/O
Functional Description
m
om
en
The GS881Z18/32/36B(T/D)-xxxV is a 9Mbit Synchronous
Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL
or other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
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Paramter Synopsis
-250
t
KQ
tCycle
3.0
4.0
200
230
5.5
5.5
160
185
d
The GS881Z18/32/36B(T/D)-xxxV may be configured by the
user to operate in Pipeline or Flow Through mode. Operating
as a pipelined synchronous device, in addition to the rising-
edge-triggered registers that capture input signals, the device
incorporates a rising-edge-triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS881Z18/32/36B(T/D)-xxxV is implemented with GSI's
high performance CMOS technology and is available in
JEDEC-standard 100-pin TQFP and 165-bump BGA packages.
fo
r
N
-200
3.0
5.0
170
195
6.5
6.5
140
160
ew
D
-150
3.8
6.7
140
160
7.5
7.5
128
145
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable, ZZ and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
ec
ot
R
Pipeline
3-1-1-1
Curr (x18)
Curr (x32/x36)
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
Rev: 1.01a 2/2008
N
Flow Through
2-1-1-1
1/37
es
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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n
© 2006, GSI Technology
GS881Z18/32/36B(T/D)-xxxV
100-Pin TQFP Pin Descriptions
Symbol
A
0
, A
1
A
CK
B
A
B
B
B
C
B
D
W
E
1
E
2
E
3
G
ADV
CKE
NC
DQ
A
DQ
B
DQ
C
DQ
D
DQP
A
DQP
B
DQP
C
DQP
D
ZZ
FT
LBO
TMS
TDI
TDO
TCK
V
DD
V
SS
V
DDQ
In
In
In
Type
In
In
In
In
In
In
In
In
In
In
In
In
In
In
—
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
In
In
In
Description
Burst Address Inputs; Preload the burst counter
Address Inputs
Clock Input Signal
Byte Write signal for data inputs DQ
A
; active low
Byte Write signal for data inputs DQ
C
; active low
Byte Write signal for data inputs DQ
D
; active low
Chip Enable; active low
Write Enable; active low
Chip Enable—Active Low. For self decoded depth expansion
Advance/Load; Burst address counter control pin
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en
d
m
om
ec
ot
R
Pipeline/Flow Through Mode Control; active low
Linear Burst Order; active low.
Scan Test Mode Select
Scan Test Data In
Scan Test Data Out
Scan Test Clock
Core power supply
Ground
Output driver power supply
Rev: 1.01a 2/2008
N
5/37
fo
r
Clock Input Buffer Enable; active low
No Connect
Byte A Data Input and Output pins
Byte B Data Input and Output pins
Byte C Data Input and Output pins
Byte D Data Input and Output pins
9th Data I/O Pin; Byte A
9th Data I/O Pin; Byte B
9th Data I/O Pin; Byte C
9th Data I/O Pin; Byte D
Power down control; active high
N
Output Enable; active low
ew
Chip Enable—Active High. For self decoded depth expansion
D
© 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
es
ig
n
Byte Write signal for data inputs DQ
B
; active low
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