MJD47/50
MJD47/50
High Voltage and High Reliability
D-PAK for Surface Mount Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP47 and TIP50
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Emitter Voltage
: MJD47
: MJD50
Collector-Emitter Voltage
: MJD47
: MJD50
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
T
J
T
STG
Junction Temperature
Storage Temperature
Value
350
500
250
400
5
1
2
0.6
15
1.56
150
- 65 ~ 150
Units
V
V
V
V
V
A
A
A
W
W
°C
°C
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: MJD47
: MJD50
Collector Cut-off Current
: MJD47
: MJD50
I
CES
Collector Cut-off Current
: MJD47
: MJD50
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
V
CE
= 350, V
EB
= 0
V
CE
= 500, V
EB
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 10V, I
C
= 0.3A
V
CE
= 10V, I
C
= 1A
I
C
= 1A, I
B
= 0.2A
V
CE
= 10A, I
C
= 1A
V
CE
=10V, I
C
= 0.2A
10
30
10
0.1
0.1
1
150
1
1.5
V
V
MHz
mA
mA
mA
V
CE
= 150V, I
B
= 0
V
CE
= 300V, I
B
= 0
0.2
0.2
mA
mA
Test Condition
I
C
= 30mA, I
B
= 0
Min.
250
400
Max.
Units
V
V
I
CEO
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD47/50
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
10
V
CE
= 2V
I
C
= 5 I
B
h
FE
, DC CURRENT GAIN
100
1
V
BE
(sat)
10
0.1
V
CE
(sat)
1
0.01
0.1
1
10
0.01
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
10
V
CC
= 200V
I
C
= 5I
B
V
CC
= 200V
I
C
= 5I
B
t
STG
, t
F
[
µ
s], TURN OFF TIME
t
R
, t
D
[
µ
s], TURN ON TIME
1
1
t
STG
t
R
0.1
0.1
t
F
t
D
0.01
0.01
0.01
0.01
0.1
1
10
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. Turn On Time
Figure 4. Turn Off Time
10
20
I
C
[A], COLLECTOR CURRENT
1
I
CP
(max)
I
C
(max)
DC
50
0
µ
10
s
0
µ
P
C
[W], POWER DISSIPATION
1000
s
15
1m
s
0.1
10
0.01
MJD47
MJD50
5
1E-3
1
10
100
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
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As used herein:
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1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
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or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3