Datasheet> 器件分类 > 分立半导体> 晶体管> MWT-3HP

文档预览

MWT-3HP: 产品描述RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE; 产品类别分立半导体晶体管; 文件大小228KB，共4页; 制造商Microwave_Technology_Inc.

下载文档详细参数选型对比全文预览

MWT-3HP概述

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE

MWT-3HP规格参数

参数名称	属性值
零件包装代码	DIE
包装说明	UNCASED CHIP, R-XXUC-N
针数	4
Reach Compliance Code	unknown
配置	SINGLE
FET 技术	METAL SEMICONDUCTOR
最高频带	K BAND
JESD-30 代码	R-XXUC-N
元件数量	1
工作模式	DEPLETION MODE
封装主体材料	UNSPECIFIED
封装形状	RECTANGULAR
封装形式	UNCASED CHIP
极性/信道类型	N-CHANNEL
最小功率增益 (Gp)	10 dB
表面贴装	YES
端子形式	NO LEAD
端子位置	UNSPECIFIED
晶体管应用	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

MWT-3HP相似产品对比

	MWT-3HP	MWT-371HP	MWT-370HP	MWT-373HP
描述	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED PACKAGE-2	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED PACKAGE-4	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, NULL
包装说明	UNCASED CHIP, R-XXUC-N	FLANGE MOUNT, S-CDFM-F2	MICROWAVE, S-CQMW-F4	MICROWAVE, X-CQMW-F4
Reach Compliance Code	unknown	unknown	unknown	unknown
配置	SINGLE	SINGLE	SINGLE	SINGLE
FET 技术	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
最高频带	K BAND	K BAND	K BAND	K BAND
JESD-30 代码	R-XXUC-N	S-CDFM-F2	S-CQMW-F4	X-CQMW-F4
元件数量	1	1	1	1
工作模式	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
封装主体材料	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR	SQUARE	SQUARE	UNSPECIFIED
封装形式	UNCASED CHIP	FLANGE MOUNT	MICROWAVE	MICROWAVE
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最小功率增益 (Gp)	10 dB	10 dB	10 dB	10 dB
表面贴装	YES	YES	YES	YES
端子形式	NO LEAD	FLAT	FLAT	FLAT
端子位置	UNSPECIFIED	DUAL	QUAD	QUAD
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE
针数	4	2	4	-
外壳连接	-	SOURCE	SOURCE	SOURCE
最大反馈电容 (Crss)	-	0.022 pF	0.022 pF	0.022 pF
端子数量	-	2	4	4
最高工作温度	-	175 °C	175 °C	175 °C
认证状态	-	Not Qualified	Not Qualified	Not Qualified

推荐资源

器件捷径: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

热门器件

开源项目推荐更多

热门活动更多

热门文章更多

技术资料推荐更多