MwT-PH15
28 GHz Medium Power AlGaAs/InGaAs PHEMT
May 2011
Features:
•
•
•
•
•
•
+28.5 dBm Output Power at 12 GHz
12 dB Small Signal Gain at 12 GHz
60% PAE at 12 GHz
0.3 x 630 Micron Refractory Metal/Gold Gate
Excellent for High Power, Gain, and High Power Added
Efficiency up to 28 GHz
Ideal for Commercial, Military, Hi-Rel Space
Applications
Chip Dimensions: 775 x 241 microns
Chip Thickness: 100 microns
Description:
The MwT-PH15 is a AlGaAs/InGaAs PHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.3 micron
gate length and 630 micron gate width make it ideally suited for applications requiring high-gain and power up to 28 GHz frequency
range with power outputs ranging from 500 to 700 milli-watts. The device is equally effective for either wideband (e.g. 6 to 18 GHz)
or narrow-band applications. The chip is produced using MwT's reliable metal systems and all devices from each wafer are
screened to insure reliability. All chips are passivated using MwT's patented "Diamond-Like Carbon" process for increased
durability
.
Electrical Specifications:
SYMBOL
P1dB
PARAMETERS & CONDITIONS
Output Power at 1dB Compression
Vds=7.0 V Ids=0.75xIDSS=150 mA
Small Signal Gain
Vds=7.0 V Ids=0.75xIDSS=150 mA
Power Added Efficiency at P1dB
Vds=7.0 V Ids=0.75xIDSS=150 mA
Recommended IDSS Range
for Optimum P1dB
•
at Ta= 25
°
C
FREQ
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
UNITS
dBm
MIN
27.0
TYP
28.5
28.5
12.0
9.5
60
140 - 220
SSG
PAE
IDSS
dB
10.0
%
mA
DC Specifications:
SYMBOL
IDSS
Gm
Vp
BVGSO
Saturated Drain Current
Vds=4.0 V Vgs=0.0 V
Transconductance
Vds=2.5 V Vgs=0.0 V
Pinch-off Voltage
Vds=3.0 V Ids=2.0 mA
•
at Ta= 25
°
C
UNITS
mA
mS
V
V
-6.0
MIN
120
130
200
-1.2
-10.0
-2.5
TYP
MAX
240
PARAMETERS & CONDITIONS
Gate-to-Source Breakdown Voltage
Igs= -0.7 mA
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2011
MwT-PH15
28 GHz Medium Power AlGaAs/InGaAs PHEMT
May 2011
BVGDO
Rth
Gate-to-Drain Breakdown Voltage
Igd= -0.7 mA
Chip Thermal Resistance
V
C/W
-10.0
-13.0
65*
* Overall Rth depends on case mounting
DEVICE EQUIVALENT CIRCUIT
PARAMETER
Source Resistance
Source Inductance
Drain-Source Resistance
Drain-Source Capacitance
Drain Resistance
Drain Pad Capacitance
Drain Inductance
Gate Bond Wire Inductance
Gate Pad Capacitance
Gate Resistance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit Time
Rs
Ls
Rds
Cds
Rd
Cpd
Ld
Lg
Cpg
Rg
Cgs
Ri
Cgd
gm
tau
0.10
0.03
200
0.12
0.84
0.05
0.10
0.07
0.20
0.10
1.30
2.30
0.07
200
2.60
VALUE
ohm
nH
ohm
pF
ohm
pF
nH
nH
pF
ohm
pF
ohm
pF
mS
psec
MwT-PH15
DUAL BIAS
MwT-PH15
SELF BIAS
MAXIMUM RATINGS AT Ta = 25
°
C
Symbol
VDS
Tch
Parameter
Drain to Source Volt.
Channel Temperature
Units
V
Cont
Max1
7.5
+150
Absolute
Max2
8.0
+175
°
C
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2011
MwT-PH15
28 GHz Medium Power AlGaAs/InGaAs PHEMT
May 2011
Tst
Storage Temperature
-65 to+150
+175
°
C
Pin
RF Input Power
mW
200
300
Pt
Total Power Dissipation
mW
1900
2300
Notes:
1.
Exceeding any one of these limits in continuous operation may reduce the mean-time- to-failure below the design goal.
2.
Exceeding any one of these limits may cause permanent damage.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2011
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