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MJE13003-BP-HF

产品描述Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
产品类别分立半导体    晶体管   
文件大小321KB,共3页
制造商Micro Commercial Components (MCC)
标准
下载文档 详细参数 选型对比 全文预览

MJE13003-BP-HF概述

Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN

MJE13003-BP-HF规格参数

参数名称属性值
是否Rohs认证符合
包装说明HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
Reach Compliance Codecompliant
ECCN代码EAR99
外壳连接ISOLATED
最大集电极电流 (IC)1.5 A
集电极-发射极最大电压400 V
配置SINGLE
最小直流电流增益 (hFE)8
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
极性/信道类型NPN
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管元件材料SILICON
标称过渡频率 (fT)5 MHz
Base Number Matches1

文档预览

下载PDF文档
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
MJE13003
Features
Halogen
free available upon request by adding suffix "-HF"
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Capable of 1.5Watts of Power Dissipation.
Collector-current 1.5A
Collector-base Voltage 700V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Mounting Torgue:
5
in-lbs Maximum
NPN Silicon
Plastic-Encapsulate
Transistor
TO-220
B
F
C
S
Q
T
A
U
1 2
3
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=1000uAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=1000uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=700Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=400Vdc,I
B
=0)
Emitter Cutoff Current
(V
EB
=9.0Vdc, I
C
=0)
DC Current Gain
(I
C
=0.5Adc, V
CE
=2.0Vdc)
DC Current Gain
(I
C
=0.5mAdc, V
CE
=10Vdc)
Collector-Emitter Saturation Voltage
(I
C
=1000mAdc, I
B
=250mAdc)
Base-Emitter Saturation Voltage
(I
C
=1000mAdc, I
B
=250mAdc)
Base-Emitter Voltage
(I
E
=2000mAdc)
Trans istor Frequency
(I
C
=100mAdc, V
CE
=10Vdc, f=1.0MHz)
Fall Time
V
CC
=100V,I
C
=1.0
A,I
B1
=I
2
=0.2A
Storage Time
B
Min
400
700
9.0
1000
500
1000
Max
Units
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
L
K
H
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
8.0
5.0
1.0
1.2
3.0
Vdc
Vdc
Vdc
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
V
D
J
R
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
40
G
N
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.560
.625
14.22
15.88
.380
.420
9.65
10.67
.140
.190
3.56
4.82
.020
.139
.190
---
.012
.500
.045
.190
.100
.080
.045
.230
-----
.045
.045
.161
.110
.250
.025
.580
.060
.210
.135
.115
.055
.270
.050
-----
0.51
3.53
2.29
---
0.30
12.70
1.14
4.83
2.54
2.04
1.14
5.84
-----
1.15
1.14
4.09
2.79
6.35
0.64
14.73
1.52
5.33
3.43
2.92
1.39
6.86
1.27
-----
NOTE
SMALL-SIGNAL CHARACTERISTICS
f
T
t
F
t
S
5.0
0.5
2.5
MHz
uS
uS
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
www.mccsemi.com
Revision:
C
1 of 3
2013/01/01

MJE13003-BP-HF相似产品对比

MJE13003-BP-HF MJE13003-BP
描述 Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
是否Rohs认证 符合 符合
包装说明 HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
Reach Compliance Code compliant not_compliant
ECCN代码 EAR99 EAR99
外壳连接 ISOLATED ISOLATED
最大集电极电流 (IC) 1.5 A 1.5 A
集电极-发射极最大电压 400 V 400 V
配置 SINGLE SINGLE
最小直流电流增益 (hFE) 8 8
JEDEC-95代码 TO-220AB TO-220AB
JESD-30 代码 R-PSFM-T3 R-PSFM-T3
元件数量 1 1
端子数量 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT
极性/信道类型 NPN NPN
表面贴装 NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 5 MHz 5 MHz
Base Number Matches 1 1

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