电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MJE13003B-BP

产品描述Small Signal Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
产品类别分立半导体    晶体管   
文件大小259KB,共2页
制造商Micro Commercial Components (MCC)
标准  
下载文档 详细参数 选型对比 全文预览

MJE13003B-BP概述

Small Signal Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

MJE13003B-BP规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码TO-92
包装说明CYLINDRICAL, O-PBCY-T3
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
最大集电极电流 (IC)1.5 A
集电极-发射极最大电压400 V
配置SINGLE
最小直流电流增益 (hFE)20
JEDEC-95代码TO-92
JESD-30 代码O-PBCY-T3
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式CYLINDRICAL
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
认证状态Not Qualified
表面贴装NO
端子面层Matte Tin (Sn)
端子形式THROUGH-HOLE
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管元件材料SILICON
Base Number Matches1

文档预览

下载PDF文档
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
MJE13003B
Features
available upon request by adding suffix "-HF"
Halogen
free
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Capable of 1.0Watts of Power Dissipation.
Collector-current 1.5A
Collector-base Voltage 700V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Marking:3DD13003
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=1000uAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=1000uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=700Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=400Vdc,I
B
=0)
Emitter Cutoff Current
(V
EB
=7.0Vdc, I
C
=0)
DC Current Gain
(I
C
=0.4Adc, V
CE
=10Vdc)
Collector-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=100mAdc)
Collector-Emitter Saturation Voltage
(I
C
=1500mAdc, I
B
=500mAdc)
Base-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=100mAdc)
Min
400
700
9.0
1000
500
100
Max
Units
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
B
C
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
CE(sat)
V
BE(sat)
20
40
0.8
3.0
1.0
Vdc
Vdc
Vdc
E
E
C
B
C
B
D
G
STRAIGHT LEAD BENT LEAD
BULK PACK
AMMO PACK
DIMENSIONS
DIM
A
B
C
D
E
G
INCHES
MIN
.175
.175
.500
.016
.135
.095
.173
MM
MAX
.185
.185
---
.020
.145
.105
.220
MIN
4.45
4.45
12.70
0.41
3.43
2.42
4.40
MAX
4.70
4.70
---
0.63
3.68
2.67
5.60
NOTE
Straight Lead
Bent Lead
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
www.mccsemi.com
Revision:
D
1 of 2
2013/01/01

MJE13003B-BP相似产品对比

MJE13003B-BP MJE13003B-AP MJE13003B-AP-HF MJE13003B-BP-HF
描述 Small Signal Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, Small Signal Bipolar Transistor,
是否Rohs认证 符合 符合 符合 符合
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
Base Number Matches 1 1 1 1

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2155  1047  1800  534  344  59  11  34  5  23 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved