PD-91331F
IRHM7160
JANSR2N7432
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number
IRHM7160
IRHM3160
IRHM5160
IRHM8160
Radiation Level
100 kRads(Si)
300 kRads(Si)
500 kRads(Si)
1000 kRads(Si)
RDS(on)
0.045
0.062
0.062
0.062
I
D
35A*
35A*
35A*
35A*
QPL Part Number
JANSR2N7432
JANSF2N7432
JANSG2N7432
JANSH2N7432
100V, N-CHANNEL
REF: MIL-PRF-19500/663
RAD-Hard HEXFET TECHNOLOGY
TO-254AA
Description
IR HiRel RAD-Hard HEXFET technology provides high
performance power MOSFETs for space applications.
This technology has over a decade of proven performance
and reliability in satellite applications. These devices have
been characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rdson and low gate
charge reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages of
MOSFETs such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Light Weight
ESD Rating: Class 3B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
I
D1
@ V
GS
= 12V, T
C
= 25°C
I
DM
@ T
C
= 25°C
P
D
@ T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pre-Irradiation
Parameter
Value
35*
32
140
250
2.0
± 20
500
35
25
7.3
-55 to + 150
300 (0.063 in./1.6 mm from case for 10s)
9.3 (Typical)
g
W
W/°C
V
mJ
A
mJ
V/ns
°C
A
Units
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
I
D2
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current
* Current is limited by package
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2019-03-11
IRHM7160
JANSR2N7432
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
Static Drain-to-Source On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
100 ––– –––
––– 0.107 –––
–––
2.0
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.045
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.8
4.0
–––
25
250
100
-100
310
53
110
35
150
150
130
–––
V
V/°C
V
S
µA
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
Reference to 25°C, I
D
= 1.0mA
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
= 15V, I
D2
= 32A
V
GS
= 12V, I
D2
= 32A
V
DS
= 80V, V
GS
= 0V
V
DS
= 80V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
I
D1
= 35A
nC
V
DS
= 50V
V
GS
= 12V
V
DD
= 50V
I
D1
= 35A
ns
R
G
= 2.35
V
GS
= 12V
nH
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/
0.25 in from package) with Source wire
internally bonded from Source pin to
Drain pad
––– 5300 –––
––– 1600 –––
––– 350 –––
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
35*
140
1.8
570
6.1
A
V
ns
µC
Test Conditions
T
J
= 25°C,I
S
= 35A, V
GS
= 0V
T
J
= 25°C, I
F
= 35A, V
DD
≤
50V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
* Current is limited by package
Thermal Resistance
Symbol
R
JC
R
CS
R
JA
Case -to-Sink
Junction-to-Ambient (Typical socket mount)
Parameter
Junction-to-Case
Min.
–––
–––
–––
Typ.
–––
0.21
–––
Max.
0.50
–––
48
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= 25V, starting T
J
= 25°C, L =0.82mH, Peak I
L
= 35A, V
GS
= 12V
V
I
SD
35A, di/dt
100A/µs, V
DD
100V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias: 12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias: 80 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2019-03-11
IRHM7160
JANSR2N7432
Radiation Characteristics
Pre-Irradiation
IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Sym-
bol
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-254AA)
Diode Forward Voltage
100 kRads (Si)
1
Min.
100
2.0
–––
–––
–––
–––
–––
–––
Max.
–––
4.0
100
-100
25
0.045
0.045
1.8
300k - 1000 kRads (Si)
2
Min.
100
1.25
–––
–––
–––
–––
–––
–––
Max.
–––
4.5
100
-100
25
0.062
0.062
1.8
V
V
nA
nA
µA
V
V
GS
= 0V, I
D
= 1.0mA
V
DS
= V
GS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 80V, V
GS
= 0V
V
GS
= 12V, I
D2
= 32A
V
GS
= 12V, I
D2
= 32A
V
GS
= 0V, I
S
= 35A
Units
Test Conditions
1. Part number IRHM7160 (JANSR2N7432)
2. Part numbers IRHM3160 (JANSF2N7432), IRHM5160 (JANSG2N7432) and IRHM8160 (JANSH2N7432)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
(MeV/(mg/cm
2
))
28
36.8
Energy
(MeV)
285
305
Range
(µm)
43
39
VDS (V)
@VGS=0V
100
100
@VGS=-5V
100
90
@VGS=-10V @VGS=-15V @VGS=-20V
100
70
80
50
60
–––
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
International Rectifier HiRel Products, Inc.
2019-03-11
IRHM7160
JANSR2N7432
Pre-Irradiation
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
10000
Fig 4.
Normalized On-Resistance Vs. Temperature
20
V
GS
, Gate-to-Source Voltage (V)
8000
V
GS
C
iss
C
rss
C
oss
=
=
=
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
I
D
= 35A
16
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
C, Capacitance (pF)
6000
Ciss
12
4000
Coss
8
2000
4
Crss
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
80
120
160
200
240
280
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
4
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
2019-03-11
International Rectifier HiRel Products, Inc.
IRHM7160
JANSR2N7432
Pre-Irradiation
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100
ID, Drain-to-Source Current (A)
I
SD
, Reverse Drain Current (A)
100s
T
J
= 150
°
C
1ms
10
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
10
T
J
= 25
°
C
V
GS
= 0 V
0.8
1.2
1.6
2.0
2.4
1
0.4
1
DC
1000
V
SD
,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
E
AS
, Single Pulse Avalanche Energy (mJ)
60
Fig 8.
Maximum Safe Operating Area
1400
1200
1000
800
600
400
200
0
LIMITED BY PACKAGE
50
TOP
BOTTOM
ID
16A
22A
35A
I
D
, Drain Current (A)
40
30
20
10
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
Starting T
J
Junction Temperature
,
(
°
C)
Fig 9.
Maximum Drain Current Vs. Case Temperature
1
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
International Rectifier HiRel Products, Inc.
2019-03-11
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