PD - 91312B
REPETITIVE AVALANCHE AND dv/dt RATED
IRHF9230
JANSR2N7390
[REF: MIL-PRF-19500/630]
P-CHANNEL
HEXFET
®
TRANSISTOR
-200 Volt, 0.80W , RAD HARD HEXFET
W
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 10
5
Rads (Si). Under
identical
pre- and post-radia-
tion test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in gate drive
circuitry is required. These devices are also capable of sur-
viving transient ionization pulses as high as 1 x 10
12
Rads
(Si)/Sec, and return to normal operation within a few micro-
seconds. Single Event Effect (SEE) testing of International
Rectifier P-Channel RAD HARD HEXFETs has demon-
strated virtual immunity to SEE failure. Since the P-Chan-
nel RAD HARD process utilizes International Rectifier’s
patented HEXFET technology, the user can expect the high-
est quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature
all of the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters. They
are well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifi-
ers and high-energy pulse circuits in space and weapons
environments.
RAD HARD
Product Summary
Part Number
IRHF9230
BV
DSS
-200V
R
DS(on)
0.80W
I
D
-4.0A
Features:
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
IRHF9230
-4.0
-2.4
-16
25
2.0
± 20
171
-4.0
2.5
-27
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
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1
IRHF9230, JANSR2N7390 Device
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
DBV
DSS/DTJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-200
—
—
—
-2.0
2.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
-0.25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
15
—
—
0.80
0.92
-4.0
—
-25
-250
-100
100
45
10
25
30
30
75
65
—
—
V
V/°C
Test Conditions
VGS =0 V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -2.4A
VGS = -12V, ID = -4.0A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -4.0A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = -4.0A
VDS = Max Rating x 0.5
VDD = -50V, ID = -4.0A,
RG = 7.5W
W
V
S( )
mA
W
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
LS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
nA
nC
ns
nH
Measured from drain lead,
6mm (0.25 in) from package
to center of die.
Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.
Modified MOSFET symbol show-
ing the internal inductances.
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1200
190
45
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-4.0
-16
-5.0
400
1.6
Test Conditions
Modified MOSFET symbol showing the integral
reverse p-n junction rectifier.
A
V
ns
mC
T
j
= 25°C, IS = -4.0A, VGS = 0V
Tj = 25°C, IF = -4.0A, di/dt
£
-100A/ms
VDD
£
-100V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max
—
—
—
175
5.0
Units
°C/W
Test Conditions
—
Typical socket mount
2
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IRHF9230, JANSR2N7390 Device
Radiation Characteristics
Radiation Performance of P-Channel Rad
Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier com-
prises three radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD-750, test method
1019 condition A. International Rectifier has imposed
a standard gate condition of -12 volts per note 5 and a
V
DS
bias condition equal to 80% of the device rated
voltage per note 6. Pre- and post- irradiation limits of
the devices irradiated to 1 x 10
5
Rads (Si) are identical
and are presented in Table 1, column 1, IRHF9230.
The values in Table 1 will be met for either of the two
low dose rate test circuits that are used. Both pre- and
post-irradiation performance are tested and specified
using the same drive circuitry and test conditions in
order to provide a direct comparison.
High dose rate testing may be done on a special re-
quest basis using a dose rate up to 1 x 10
12
Rads (Si)/
Sec (See Table 2).
International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as
stated in MIL-PRF-19500 Group D. International Rec-
tifier radiation hardened P-Channel HEXFETs have
been characterized in heavy ion Single Event Effects
(SEE) environments. Single Event Effects character-
ization is shown in Table 3.
Table 1. Low Dose Rate
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
V
SD
IRHF9230
100K Rads (Si)
Units
V
nA
µA
W
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= -12V, I
D
=-2.4A
TC = 25°C, IS = -4.0A,V
GS
= 0V
Min
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
-200
-2.0
—
—
—
—
—
Max
—
-4.0
-100
100
-25
0.8
-5.0
Table 2. High Dose Rate
Parameter
V
DSS
IPP
di/dt
L1
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Drain-to-Source Voltage
Min Typ Max Min Typ Max
Units
Test Conditions
—
— -160 —
— -160
V
Applied drain-to-source voltage during
gamma-dot
— -100 —
— -100 —
A
Peak radiation induced photo-current
—
— -800 —
— -160 A/µsec Rate of rise of photo-current
27 —
— 0.5 —
—
µH
Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Ion
Cu
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
3x 10
5
Range
(µm)
~43
V
DS
Bias
(V)
-200
V
GS
Bias
(V)
5
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3
IRHF9230, JANSR2N7390 Device
Pre-Irradiation
100
-I
D
, Drain-to-Source Current (A)
-I
D
, Drain-to-Source Current (A)
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
10
10
-5.0V
-5.0V
1
1
10
20µs PULSE WIDTH
T
J
= 25
°
C
100
1
1
10
20µs PULSE WIDTH
T
J
= 150
°
C
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -4.0A
-I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25
°
C
10
1.5
T
J
= 150
°
C
1.0
0.5
1
5.0
V DS = -50V
20µs PULSE WIDTH
5.5
6.0
6.5
7.0
7.5
8.0
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
4
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRHF9230, JANSR2N7390 Device
Pre-Irradiation
2000
1600
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -4.0A
V
DS
=-160V
V
DS
=-100V
V
DS
=-40V
16
C, Capacitance (pF)
Ciss
1200
12
800
8
400
Coss
Crss
4
0
1
10
100
0
0
10
20
30
FOR TEST CIRCUIT
SEE FIGURE 13
40
50
60
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
10
I
D
, Drain Current (A)
10
100us
T
J
= 150
°
C
1ms
1
10ms
1
T
J
= 25
°
C
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
1000
0.1
0.5
V
GS
= 0 V
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.1
-V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
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Fig 8.
Maximum Safe Operating Area
5
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