PD-93793F
IRHF57Z30
JANSR2N7491T2
RADIATION HARDENED
POWER MOSFET
THRU-HOLE TO-205AF (TO-39)
Product Summary
Part Number Radiation Level
IRHF57Z30
IRHF53Z30
IRHF55Z30
IRHF58Z30
100 kRads(Si)
300 kRads(Si)
500 kRads(Si)
1000 kRads(Si)
30V, N-CHANNEL
REF: MIL-PRF-19500/701
R
TECHNOLOGY
5
R
DS(on)
0.045
0.045
0.045
0.056
I
D
12A*
12A*
12A*
12A*
QPL Part Number
JANSR2N7491T2
JANSF2N7491T2
JANSG2N7491T2
JANSH2N7491T2
TO-39
Description
IR HiRel R5 technology provides high performance power
MOSFETs for space applications. These devices have
been characterized for Single Event Effects (SEE) with
useful performance up to an LET of 80 MeV/(mg/cm
2
). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching and temperature stability of
electrical parameters.
Features
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Identical Pre and Post Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Hermetically Sealed
Electrically Isolated
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
I
D1
@ V
GS
= 12V, T
C
= 25°C
I
DM
@ T
C
= 25°C
P
D
@ T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pre-Irradiation
Parameter
Value
12*
10
48
25
0.2
± 20
520
12
2.5
3.0
-55 to + 150
300 (0.063 in. /1.6 mm from case for 10s)
0.98 (Typical)
g
W
W/°C
V
mJ
A
mJ
V/ns
°C
A
Units
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
I
D2
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current
*
Current is limited by package.
1
International Rectifier HiRel Products, Inc.
2018-10-26
IRHF57Z30
JANSR2N7491T2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
30
–––
–––
2.0
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– –––
0.03 –––
––– 0.045
–––
4.0
––– –––
–––
10
–––
25
––– 100
––– -100
–––
65
–––
20
–––
10
–––
25
––– 100
–––
35
–––
30
7.0
2055
936
35
–––
–––
–––
–––
V
V/°C
V
S
µA
nA
nC
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 12V, I
D2
= 10A
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
= 15V, I
D2
= 10A
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
V
GS
= -20V
I
D1
= 12A
V
DS
= 15V
V
GS
= 12V
V
DD
= 15V
I
D1
= 12A
R
G
= 7.5
V
GS
= 12V
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25
in from package) with Source wire
internally bonded from Source pin to Drain
pin
ns
nH
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12*
48
1.5
92
194
A
V
ns
nC
Test Conditions
T
J
= 25°C,I
S
= 12A, V
GS
= 0V
T
J
= 25°C, I
F
= 12A, V
DD
≤
25V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient (Typical Socket Mount)
Min.
–––
–––
Typ.
–––
–––
Max.
5.0
175
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= 20V, starting T
J
= 25°C, L = 7.2mH, Peak I
L
= 12A, V
GS
= 12V
V
I
SD
12A, di/dt
135A/µs, V
DD
30V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias. 12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. 24 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2018-10-26
IRHF57Z30
JANSR2N7491T2
Radiation Characteristics
Pre-Irradiation
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Symbol
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-39)
Diode Forward Voltage
Up to 500 kRads (Si)
1
1000 kRads (Si)
2
Min.
30
2.0
–––
–––
–––
–––
–––
–––
Max.
–––
4.0
100
-100
10
0.024
0.045
1.5
Min.
30
1.5
–––
–––
–––
–––
–––
–––
Max.
–––
4.0
100
-100
25
0.03
0.056
1.5
V
V
nA
nA
µA
V
V
GS
= 0V, I
D
= 1.0mA
V
DS
= V
GS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 24V, V
GS
= 0V
V
GS
= 12V, I
D2
= 10A
V
GS
= 12V, I
D2
= 10A
V
GS
= 0V, I
S
= 12A
Units
Test Conditions
1. Part numbers IRHF57Z30 (JANSR2N7491T2), IRHF53Z30 (JANSF2N7491T2) and IRHF55Z30 (JANSG2N7491T2)
2. Part numbers IRHF58Z30 (JANSH2N7491T2)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
LET
(MeV/(mg/cm
2
))
Cu
Br
I
28
37
60
Energy
(MeV)
261
285
344
Range
(µm)
40
37
33
@ VGS =
0V
30
30
25
@ VGS =
-5V
30
30
25
VDS (V)
@ VGS =
-10V
30
30
20
@ VGS =
-15V
25
23
15
@ VGS =
-20V
15
15
8
35
30
25
20
15
10
5
0
0
-5
-10
VGS
-15
-20
Cu
Br
I
VDS
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
International Rectifier HiRel Products, Inc.
2018-10-26
IRHF57Z30
JANSR2N7491T2
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
1000
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
100
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
10
10
5.0V
5.0V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
2.0
T = 25
°
C
J
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 12A
I
D
, Drain-to-Source Current (A)
1.5
100
T
J
= 150
°
C
1.0
10
0.5
1
V DS= 15V
20µs PULSE WIDTH
5
7
9
11
13
15
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
3500
3000
Fig 4.
Normalized On-Resistance Vs. Temperature
20
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
= 12A
V
DS
= 24V
V
DS
= 15V
16
C, Capacitance (pF)
2500
2000
1500
1000
500
0
Ciss
Coss
12
8
4
Crss
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
20
30
40
50
60
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
4
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
International Rectifier HiRel Products, Inc.
2018-10-26
IRHF57Z30
JANSR2N7491T2
Pre-Irradiation
100
T
J
= 25
°
C
100
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R
n)
DS
(o
I
SD
, Reverse Drain Current (A)
100s
10
1ms
10ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
VDS , Drain-to-Source Voltage (V)
T
J
= 150
°
C
10
1
DC
0.1
0.4
V
GS
= 0 V
0.8
1.2
1.6
2.0
2.4
0.1
100
V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
16
Fig 8.
Maximum Safe Operating Area
1500
LIMITED BY PACKAGE
E
AS
, Single Pulse Avalanche Energy (mJ)
TOP
BOTTOM
1250
ID
5.4A
9.6A
12A
I
D
, Drain Current (A)
12
1000
8
750
500
4
250
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
Starting T
J
, Junction Temperature (
°
C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.10
0.05
0.02
0.1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
10
1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
International Rectifier HiRel Products, Inc.
2018-10-26
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