PD- 91836A
IRG4CC50WB
IRG4CC50WB IGBT Die in Wafer Form
C
600 V
Size 5
WARP Speed
G
E
6" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Description
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Guaranteed (Min/Max)
2.3V Max.
600V Min.
3.0V Min., 6.0V Max.
250 µA Max.
± 1.1 µA Max.
Test Conditions
I
C
= 10A, T
J
= 25°C, V
GE
= 15V
T
J
= 25°C, I
CES
= 250µA, V
GE
= 0V
V
GE
= V
CE
, T
J
=25°C, I
C
=250µA
T
J
= 25°C, V
CE
= 600V
T
J
= 25°C, V
GE
= +/- 20V
Mechanical Data
Nominal Backmetal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment:
Recommended Die Attach Conditions
Reference Standard IR packaged part ( for design ) : IRG4PC50W
Cr-NiV-Ag ( 1kA-2kA-.2.5kA )
99% Al, 1% Si (4 microns)
0.257" x 0.260"
150mm, with std. < 100 > flat
.015" + / -.003"
01-5226
100 Microns
0.25mm Diameter Minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300C
Die Outline
www.irf.com
01/19/01
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