Bulletin PD-20727 rev. D 11/04
MUR1520
MURB1520
MURB1520-1
Ultrafast Rectifier
Features
•
•
•
•
Ultrafast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°C Operating Junction Temperature
t
rr
= 35ns
I
F(AV)
= 15Amp
V
R
= 200V
Description/ Applications
International Rectifier's MUR.. series are the state of the art Ultra fast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and ultra fast recovery time.
The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as
free-wheeling diode in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
STG
Peak Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Total Device, (Rated V
R
), T
C
= 150°C
Non Repetitive Peak Surge Current
Peak Repetitive Forward Current
(Rated V
R
, Square wave, 20 KHz), T
C
= 150°C
Operating Junction and Storage Temperatures
-65 to 175
°C
200
30
Max
200
15
Units
V
A
Case Styles
MUR1520
MURB1520
MURB1520-1
TO-220AC
www.irf.com
D
2
PAK
TO-262
1
MUR1520, MURB1520, MURB1520-1
Bulletin PD-20727 rev. D 11/04
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
BR
, V
r
V
F
Breakdown Voltage,
Blocking Voltage
Forward Voltage
Min Typ Max Units Test Conditions
200
-
-
-
-
-
-
-
55
8.0
-
1.05
0.85
10
500
-
-
V
V
V
µA
µA
pF
nH
I
R
= 100µA
I
F
= 15A
I
F
= 15A, T
J
= 150°C
V
R
= V
R
Rated
T
J
= 150°C, V
R
= V
R
Rated
V
R
= 200V
Measured lead to lead 5mm from package body
.
I
R
Reverse Leakage Current
-
-
C
T
L
S
Junction Capacitance
Series Inductance
-
-
Dynamic Recovery Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
t
rr
Reverse Recovery Time
Min Typ Max Units Test Conditions
-
-
-
-
22
39
1.6
4.1
19
-
35
-
-
-
-
-
90
ns
I
F
= 1.0A, di
F
/dt = 50A/µs, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
I
F
= 15A
V
R
= 160V
di
F
/dt = 200A/µs
I
RRM
Peak Recovery Current
-
-
A
T
J
= 25°C
T
J
= 125°C
Q
rr
Reverse Recovery Charge
-
nC
-
T
J
= 25°C
T
J
= 125°C
Thermal - Mechanical Characteristics
Parameters
T
J
T
Stg
R
thJC
R
thJA
R
thCS
Wt
Max. Junction Temperature Range
Max. Storage Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heatsink
Weight
Min
-
-
-
-
-
-
-
Typ
-
-
-
-
0.5
2.0
0.07
-
-
Max
- 65 to 175
- 65 to 175
1.5
50
-
-
-
12
10
Units
°C
°C/ W
g
(oz)
Kg-cm
lbf.in
Mounting Torque
6.0
5.0
Mounting Surface, Flat, Smooth and Greased
2
www.irf.com
MUR1520, MURB1520, MURB1520-1
Bulletin PD-20727 rev. D 11/04
100
1000
(µA)
100
10
1
0.1
0.01
T = 175˚C
J
150˚C
125˚C
100˚C
Instantaneous Forward Current - I
F
(A)
10
TJ = 175˚C
T = 150˚C
J
T = 25˚C
J
Reverse Current - I
R
25˚C
0
50
100
150
200
250
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
1000
1
Junction Capacitance - C
T
(pF)
T = 25˚C
J
100
0.1
0
0.3
0.6
0.9
1.2
Forward Voltage Drop - V
FM
(V)
10
1.5
10
1
10
100
1000
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Thermal Impedance Z
thJC
(°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
P
DM
t1
t2
Single Pulse
(Thermal Resistance)
1. Duty factor D = t1 / t2
2. Peak Tj = Pdm x ZthJC+ Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
www.irf.com
3
MUR1520, MURB1520, MURB1520-1
Bulletin PD-20727 rev. D 11/04
180
Allowable Case Temperature (°C)
25
Average Power Loss ( Watts )
170
160
150
Square wave (D = 0.50)
Rated Vr applied
20
15
10
5
0
RMS Limit
DC
140
see note (2)
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
130
0
5
10
15
20
25
Average Forward Current - I
F
(AV)
(A)
0
5
10
15
20
25
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
60
I
F
= 30 A
I
F
= 15 A
I
F
= 8 A
200
V
R
= 160V
T
J
= 125˚C
T
J
= 25˚C
50
160
I
F
= 30 A
I
F
= 15 A
I
F
= 8 A
trr ( nC )
Qrr ( nC )
V
R
= 160V
T
J
= 125˚C
T
J
= 25˚C
40
120
30
80
20
40
10
100
di
F
/dt (A/µs )
1000
0
100
di
F
/dt (A/µs )
1000
Fig. 7 - Typical Reverse Recovery vs. di
F
/dt
Fig. 8 - Typical Stored Charge vs. di
F
/dt
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= rated V
R
4
www.irf.com
MUR1520, MURB1520, MURB1520-1
Bulletin PD-20727 rev. D 11/04
Reverse Recovery Circuit
V
R
= 200V
0.01
Ω
L = 70µH
D.U.T.
di
F
/dt
dif/dt
ADJUST G
D
IRFP250
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
I
F
0
t
rr
t
a
t
b
4
2
Q
rr
I
RRM
0.5 I
RRM
di(rec)M/dt
0.75 I
RRM
5
1
di
F
/dt
f
1. di
F
/dt - Rate of change of current through zero
crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from zero
crossing point of negative going I
F
to
point
where
a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero
current
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t x I
RRM
Q
rr
=
rr
2
5. di
(rec) M
/ dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
www.irf.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
