19-0530; Rev 1; 12/07
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
General Description
The MAX15012/MAX15013 high-frequency, 175V half-
bridge, n-channel MOSFET drivers drive high- and low-
side MOSFETs in high-voltage applications. These
drivers are independently controlled and their 35ns typ-
ical propagation delay, from input to output, are
matched to within 2ns (typ). The high-voltage operation
with very low and matched propagation delay between
drivers, and high source/sink current capabilities make
these devices suitable for the high-power, high-fre-
quency telecom power converters. A reliable on-chip
bootstrap diode connected between V
DD
and BST
eliminates the need for an external discrete diode.
The MAX15012A/C and MAX15013A/C offer both nonin-
verting drivers (see the
Selector Guide).
The
MAX15012B/D and MAX15013B/D offer a noninverting
high-side driver and an inverting low-side driver. The
MAX15012A/B/C/D feature CMOS (V
DD
/2) logic inputs.
The MAX15013A/B/C/D feature TTL logic inputs. The
drivers are available in the industry-standard 8-pin SO
footprint and pin configuration and a thermally
enhanced 8-pin SO package. All devices operate over
the -40°C to +125°C automotive temperature range.
Features
♦
HIP2100/HIP2101 Pin Compatible (MAX15012A/C
and MAX15013A/C)
♦
Up to 175V Input Operation
♦
8V to 12.6V V
DD
Input Voltage Range
♦
2A Peak Source and Sink Current Drive Capability
♦
35ns Typical Propagation Delay
♦
Guaranteed 8ns Propagation Delay Matching
Between Drivers
♦
Up to 500kHz Switching Frequency
♦
Available in CMOS (V
DD
/2) or TTL Logic-Level
Inputs with Hysteresis
♦
Up to 14V Logic Inputs Independent of Input
Voltage
♦
Low 2.5pF Input Capacitance
♦
Low 70µA Supply Current
♦
Versions Available with Combination of
Noninverting and Inverting Drivers (MAX15012B/D
and MAX15013B/D)
♦
Available in Industry-Standard 8-Pin SO and
Thermally Enhanced SO Packages
MAX15012/MAX15013
Applications
Telecom Half-Bridge Power Supplies
Two-Switch Forward Converters
Full-Bridge Converters
Active-Clamp Forward Converters
Power-Supply Modules
Motor Control
Pin Configurations and Typical Operating Circuit appear at
the end of data sheet.
PART
MAX15012AASA+
MAX15012BASA+
MAX15012CASA+*
MAX15012DASA+*
Ordering Information
TEMP RANGE
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
PIN-
PACKAGE
8 SO
8 SO
8 SO-EP**
8 SO-EP**
PKG
CODE
S8-5
S8-5
S8E+14
S8E+14
Ordering Information continued at end of data sheet.
+Denotes
lead-free package.
*Future
product—contact factory for availability.
**EP
= Exposed pad.
Selector Guide
PART
MAX15012AASA+
MAX15012BASA+
MAX15012CASA+
MAX15012DASA+
MAX15013AASA+
MAX15013BASA+
MAX15013CASA+
MAX15013DASA+
HIGH-SIDE DRIVER
Noninverting
Noninverting
Noninverting
Noninverting
Noninverting
Noninverting
Noninverting
Noninverting
LOW-SIDE DRIVER
Noninverting
Inverting
Noninverting
Inverting
Noninverting
Inverting
Noninverting
Inverting
LOGIC LEVELS
CMOS (V
DD
/2)
CMOS (V
DD
/2)
CMOS (V
DD
/2)
CMOS (V
DD
/2)
TTL
TTL
TTL
TTL
PIN COMPATIBLE
HIP 2100IB
—
HIP 2100IB
—
HIP 2101IB
—
HIP 2101IB
—
________________________________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
MAX15012/MAX15013
ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to GND, unless otherwise noted.)
V
DD
, IN_H, IN_L......................................................-0.3V to +14V
DL ...............................................................-0.3V to (V
DD
+ 0.3V)
HS............................................................................-5V to +180V
DH to HS.....................................................-0.3V to (V
DD
+ 0.3V)
BST to HS ...............................................................-0.3V to +14V
dV/dt at HS ........................................................................50V/ns
Continuous Power Dissipation (T
A
= +70°C)
8-Pin SO (derate 5.9mW/°C above +70°C)...............470.6mW
8-Pin SO-EP (derate 19.2mW/°C above +70°C) .....1538.5mW
Junction-to-Case Thermal Resistance (θ
JC
)(Note 1)
8-Pin SO .......................................................................40°C/W
8-Pin SO-EP....................................................................6°C/W
Junction-to-Ambient Thermal Resistance (θ
JA
)(Note 1)
8-Pin SO .....................................................................170°C/W
8-Pin SO-EP..................................................................52°C/W
Maximum Junction Temperature .....................................+150°C
Operating Temperature Range .........................-40°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
*Per
JEDEC 51 Standard Multilayer board.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JE5D51-7, using a four-
layer board. For detailed information on package thermal considerations, see www.maxim-ic.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS
(V
DD
= V
BST
= +8V to +12.6V, V
HS
= GND = 0V, T
A
= T
J
= -40°C to +125°C, unless otherwise noted. Typical values are at V
DD
=
V
BST
= +12V and T
A
= +25°C.) (Note 2)
PARAMETER
POWER SUPPLIES
Operating Supply Voltage
V
DD
Quiescent Supply Current
(No Switching)
V
DD
Operating Supply Current
BST Quiescent Supply Current
BST Operating Supply Current
UVLO (V
DD
to GND)
UVLO (BST to HS)
UVLO Hysteresis
LOGIC INPUT
Input-Logic High
V
IH_
MAX15012_, CMOS (V
DD
/2) version
MAX15013_, TTL version
Input-Logic Low
V
IL_
MAX15012_, CMOS (V
DD
/2) version
MAX15013_, TTL version
Logic-Input Hysteresis
V
HYS
MAX15012_, CMOS (V
DD
/2) version
MAX15013_, TTL version
0.67 x
V
DD
2
0.55 x
V
DD
1.65
0.4 x
V
DD
1.4
1.6
0.25
0.33 x
V
DD
0.8
V
V
V
V
DD
I
DD
I
DDO
I
BST
I
BSTO
UVLO
VDD
UVLO
BST
(Notes 3 and 4)
IN_H = IN_L = GND (for A/C versions),
IN_H = GND, IN_L = V
DD
(for B/D versions)
f
SW
= 500kHz, V
DD
= +12V
IN_H = IN_L = GND (for A/C versions),
IN_H = GND, IN_L = V
DD
(for B/D versions)
f
SW
= 500kHz, V
DD
= V
BST
= +12V
V
DD
rising
BST rising
6.5
6.0
7.3
6.9
0.5
15
8.0
70
12.6
140
3
40
3
8.0
7.8
V
µA
mA
µA
mA
V
V
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
2
_______________________________________________________________________________________
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= V
BST
= +8V to +12.6V, V
HS
= GND = 0V, T
A
= T
J
= -40°C to +125°C, unless otherwise noted. Typical values are at V
DD
=
V
BST
= +12V and T
A
= +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
V
IN_L
= V
DD
for MAX15012B/MAX15012D/
MAX15013B/MAX15013D
Logic-Input Current
I
_IN
V
IN_H
= 0V
V
IN_L
= 0V for MAX15012A/MAX15012C/
MAX15013A/MAX15013C
IN_H to GND
Input Resistance
R
IN
IN_L to V
DD
for MAX15012B/MAX15012D/
MAX15013B/MAX15013D
IN_L to GND for MAX15012A/MAX15012C/
MAX15013A/MAX15013C
Input Capacitance
HIGH-SIDE GATE DRIVER
HS Maximum Voltage
BST Maximum Voltage
Driver Output Resistance
(Sourcing)
Driver Output Resistance
(Sinking)
DH Reverse Current (Latchup
Protection)
Power-Off Pulldown Clamp
Voltage
Peak Output Current (Sourcing)
Peak Output Current (Sinking)
LOW-SIDE GATE DRIVER
Driver Output Resistance
(Sourcing)
Driver Output Resistance
(Sinking)
Reverse Current at DL (Latchup
Protection)
Power-Off Pulldown Clamp
Voltage
Peak Output Current (Sourcing)
Peak Output Current (Sinking)
INTERNAL BOOTSTRAP DIODE
Forward Voltage Drop
Turn-On and Turn-Off Time
V
F
t
R
I
BST
= 100mA
I
BST
= 100mA
0.91
40
1.11
V
ns
I
PK_LP
I
PK_LN
R
ON_LP
R
ON_LN
V
DD
= 12V, I
DL
= 100mA
(sourcing)
V
DD
= 12V, I
DL
= 100mA
(sinking)
(Note 5)
V
DD
= 0V or floating, I
DL
= 1mA (sinking)
C
L
= 10nF, V
DL
= 0V
C
L
= 10nF, V
DL
= 12V
T
A
= +25°C
T
A
= +125°C
T
A
= +25°C
T
A
= +125°C
400
0.95
2
2
1.16
2.5
3.5
2.1
3.2
3.3
4.6
2.8
4.2
Ω
Ω
mA
V
A
A
I
DH_PEAK
V
HS_MAX
V
BST_MAX
R
ON_HP
R
ON_HN
V
DD
≤
10.5V (Note 4)
V
DD
≤
10.5V (Note 4)
V
DD
= 12V, I
DH
= 100mA
(sourcing)
V
DD
= 12V, I
DH
= 100mA
(sinking)
(Note 5)
V
BST
= 0V or floating, I
DH
= 1mA (sinking)
C
L
= 10nF, V
DH
= 0V
C
L
= 10nF, V
DH
= 12V
T
A
= +25°C
T
A
= +125°C
T
A
= +25°C
T
A
= +125°C
400
0.94
2
2
1.16
175
189
2.5
3.5
2.1
3.2
3.3
4.6
2.8
4.2
V
V
Ω
Ω
mA
V
A
A
C
IN
2.5
pF
1
MΩ
-1
+0.001
+1
µA
MIN
TYP
MAX
UNITS
MAX15012/MAX15013
_______________________________________________________________________________________
3
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
MAX15012/MAX15013
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= V
BST
= +8V to +12.6V, V
HS
= GND = 0V, T
A
= T
J
= -40°C to +125°C, unless otherwise noted. Typical values are at V
DD
=
V
BST
= +12V and T
A
= +25°C.) (Note 2)
PARAMETER
SYMBOL
C
L
= 1000pF
Rise Time
t
R
C
L
= 5000pF
C
L
= 10,000pF
C
L
= 1000pF
Fall Time
t
F
C
L
= 5000pF
C
L
= 10,000pF
Turn-On Propagation Delay Time
Turn-Off Propagation Delay Time
Delay Matching Between Driver-
Low and Driver-High
Internal Nonoverlap
Minimum Pulse Width Input Logic
(Note 6)
t
PW-min
V
DD
= V
BST
= 12V
V
DD
= V
BST
= 8V
t
D_ON
t
D_OFF
t
MATCH
Figure 1, C
L
= 1000pF
(Note 5)
Figure 1, C
L
= 1000pF
(Note 5)
CMOS
TTL
CMOS
TTL
CONDITIONS
MIN
TYP
7
33
65
7
33
65
30
35
30
35
2
1
135
170
55
63
55
63
8
ns
ns
ns
ns
ns
ns
ns
MAX
UNITS
SWITCHING CHARACTERISTICS FOR HIGH- AND LOW-SIDE DRIVERS (V
DD
= V
BST
= +12V)
C
L
= 1000pF, Figure 1 (Note 5)
Note 2:
All devices are 100% tested at T
A
= +125°C. Limits over temperature are guaranteed by design.
Note 3:
Ensure that the V
DD
-to-GND or BST-to-HS transient voltage does not exceed 13.2V.
Note 4:
Maximum operating supply voltage (V
DD
) reduces linearly from 12.6V to 10.5V with its maximum voltage (V
HS_MAX
) increasing
from 125V to 175V. See the
Typical Operating Characteristics
and
Applications Information
sections.
Note 5:
Guaranteed by design, not production tested.
Note 6:
See the
Minimum Input Pulse Width
section.
4
_______________________________________________________________________________________
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
MAX15012/MAX15013
Typical Operating Characteristics
(Typical values are at V
DD
= V
BST
= +12V and T
A
= +25°C, unless otherwise specified.)
UNDERVOLTAGE LOCKOUT
(V
DD
AND V
BST
RISING) vs. TEMPERATURE
MAX15012/13 toc01
V
DD
AND BST UNDERVOLTAGE LOCKOUT
HYSTERESIS vs. TEMPERATURE
0.9
0.8
UVLO HYSTERESIS (V)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0μA
UVLO
VDD
HYSTERESIS
UVLO
BST
HYSTERESIS
0V
MAX15012/13 toc02
I
DD
vs. V
DD
MAX15012/13 toc03
7.5
7.4
7.3
7.2
UVLO (V)
7.1
7.0
6.9
6.8
6.7
6.6
6.5
UVLO
BST
UVLO
VDD
1.0
IN_H = GND
IN_L = V
DD
V
DD
2V/div
I
DD
50μA/div
4ms/div
-40 -25 -10 5 20 35 50 65 80 95 110 125
TEMPERATURE (°C)
-40 -25 -10 5 20 35 50 65 80 95 110 125
TEMPERATURE (°C)
I
DDO
+ I
BSTO
vs. V
DD
(f
SW
= 250kHz)
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
MAX15012/13 toc04
INTERNAL BST DIODE
(I-V) CHARACTERISTICS
180
160
140
I
DIODE
(mA)
120
100
80
60
40
20
0
T
A
= +125°C
T
A
= +25°C
T
A
= 0°C
T
A
= -40°C
MAX15012/13 toc05
200
I
DDO
+ I
BSTO
(mA)
0 1 2 3 4 5 6 7 8 9 10 11 12 13
V
DD
(V)
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V
DD
- V
BST
(V)
V
DD
QUIESCENT CURRENT
vs. V
DD
(NO SWITCHING)
MAX15012/13 toc06
BST QUIESCENT CURRENT
vs. BST VOLTAGE
18
15
I
BST
(μA)
12
9
6
3
T
A
= +125°C
V
BST
= V
DD
+ 1V,
NO SWITCHING
MAX15012/13 toc07
160
140
120
100
I
DD
(μA)
80
60
40
20
T
A
= -40°C
0
0
2
4
6
V
DD
(V)
8
10
12
T
A
= +25°C
V
DD
= V
BST
V
HS
= GND
IN_H = GND
IN_L = V
DD
T
A
= +125°C
21
T
A
= -40°C, T
A
= 0°C, T
A
= +25°C
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
V
BST
(V)
_______________________________________________________________________________________
5
测试/测量
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