SF1082A 125 MHz SAW Filter
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Designed for GSM BTS Transmitter Applications
Low Insertion Loss
9.1 X 7.1 mm Surface-Mount Case
Unbalanced Input and Output
Characteristic
Nominal Center Frequency
Passband
Insertion Loss at fc
3 dB Passband
Amplitude Ripple over fc
±75
kHz
Group Delay Variation over fc
±75
kHz
Rejection
fc-7.5 to fc-6.0 and fc+6.0 to fc+7.5 MHz
Ultimate
Operating Temperature Range
Impedance Matching to 50
Ω
unbalanced
Case Style
Lid Symbolization (XX = 2-character date code)
Absolute Maximum Ratings
Rating
Maximum Incident Power in Passband
Max. DC voltage between any 2 terminals
Storage Temperature Range
Max Soldering Profile
Sym
fc
IL
BW
3
GDV
Min
±275
Typ
125.000
6
±440
Max
8.0
0.3
100
20
T
A
-40
40
>40
+85
Units
MHz
dB
kHz
dB
P-P
ns
P-P
dB
°C
Notes
1
1, 2
1, 2, 3
1
External L-C
SM9171-10 9.1 x 7.1 mm Nominal Footprint
RFM SF1082A XX
Electrical Connections
Connection Terminals
Port 1 Hot 1
Port 1 Gnd Return 4
Port 2 Hot 6
Port 2 Gnd Return 9
Case Ground All Others
Value
Units
+10
dBm
30
VDC
-40 to +85
°C
265°C for 10 s
Notes:
1. Unless noted otherwise, all specifications apply
over the operating temperature range
with filter soldered to the specified
demonstration board with impedance matching to 50
Ω
and measured with 50
Ω
network analyzer.
2. Unless noted otherwise, all frequency specifications are referenced to the nominal center frequency, fc.
3. Rejection is measured as attenuation below the minimum IL point in the passband. Rejection in final user application is dependent
on PCB layout and external impedance matching design. See Application Note No. 42 for details.
4. “LRIP” or “L” after the part number indicates “low rate initial production” and “ENG” or “E” indicates “engineering prototypes.”
5. The design, manufacturing process, and specifications of this filter are subject to change.
6. Either Port 1 or Port 2 may be used for either input or output in the design. However, impedances and impedance matching may
vary between Port 1 and Port 2, so that the filter must always be installed in one direction per the circuit design.
7. US and international patents may apply.
8. RFM, stylized RFM logo, and RF Monolithics, Inc. are registered trademarks of RF Monolithics, Inc.
9.
©Copyright
1999, RF Monolithics Inc.
10. Electrostatic Sensitive Device. Observe precautions for handling.
RF Monolithics, Inc.
4347 Sigma Road
Dallas, Texas 75244
USA
Phone: +1(972)233-2903
Fax: +1(972)387-8148
e-mail:
info@rfm.com
Home page:
www.rfm.com
European Sales Office
44 1963 251383
44 1963 251510
SF1082A 7/22/1999 R
嵌入式系统
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