UNISONIC TECHNOLOGIES CO., LTD
DTD143E
DIGITAL TRANSISTORS
(BUILT- IN RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
NPN SILICON TRANSISTOR
3
2
1
SOT-23
3
EQUIVALENT CIRCUIT
R1
IN
R2
GND
IN
GND
OUT
OUT
2
1
SOT-323
*Pb-free plating product number:DTD143EL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
DTD143E-AE3-R
DTD143EL-AE3-R
DTD143E-AL3-R
DTD143EL-AL3-R
Package
SOT-23
SOT-323
Pin Assignment
1
2
3
G
I
O
G
I
O
Packing
Tape Reel
Tape Reel
DTD143EL-AE3-R
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) R: Tape Reel
(2) AE3: SOT-23, AL3: SOT-323
(3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
DE3
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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DTD143E
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
PARAMETER
NPN SILICON TRANSISTOR
SYMBOL
RATINGS
UNIT
Supply Voltage
V
CC
50
V
Input Voltage
V
IN
-10 ~ +30
V
Output Current
I
OUT
500
mA
Power Dissipation
P
D
200
mW
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS
(Ta=25°C)
SYMBOL
V
IN(OFF)
Input Voltage
V
IN(ON)
Output Voltage
V
OUT(ON)
Input Current
I
IN
Output Current
I
OUT(OFF)
DC Current Gain
h
FE
Input Resistance
R
1
Resistance Ratio
R
2
/R
1
Transition Frequency
f
T
* Transition frequency of the device
PARAMETER
TEST CONDITIONS
V
CC
=5V, I
OUT
=100µA
V
OUT
=0.3V, I
OUT
=20mA
I
OUT
/I
IN
=50mA/2.5mA
V
IN
=5V
V
CC
=50V, V
IN
=0V
V
OUT
=5V, I
OUT
=50mA
MIN
3
0.1
0.3
1.8
0.5
6.11
1.2
TYP
MAX
0.5
UNIT
V
V
mA
µA
KΩ
MHz
47
3.29
0.8
V
CE
=10V, I
E
=−50mA, f=100MHz *
4.7
1
200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-084,A
DTD143E
TYPICAL CHARACTERISTIC
Input Voltage vs. Output Current
(ON Characteristics)
100
50
Output Current, I
OUT
(mA)
Input Voltage, V
IN (ON)
(V)
NPN SILICON TRANSISTOR
Output Current vs. Input Voltage
(OFF Characteristics)
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
Ta=100℃
25℃
-40℃
V
CC
=5V
V
OUT
=0.3V
20
10
5
2
1
500m
200m
100m
0.5
1
2
5
10 20
50 100 200
500
Ta=-40℃
25℃
100℃
0
0.5
1.0
1.5
2.0
2.5
3.0
Output Current, I
OUT
(mA)
DC Current Gain vs. Output Current
1K
500
DC Current Gain, h
FE
Input Voltage, V
I(OFF)
(V)
Output Voltage vs. Output Current
1000
500
Output Voltage, V
OUT(ON)
(mV)
V
OUT
=5V
Ta=100℃
25℃
-40℃
l
OUT
/l
IN
=20
Ta=100℃
25℃
-40℃
200
100
50
20
10
5
2
1
0.5
1
200
100
50
20
10
5
2
1
0.5
1
2
5
2
5
10 20
50 100 200 500
10 20
50 100 200 500
Output Current, I
OUT
(mA)
Output Current, I
OUT
(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-084,A
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