Standard SRAM, 32KX8, 20ns, CMOS, PDSO28
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 包装说明 | TSSOP, TSSOP28,.53,22 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 最长访问时间 | 20 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PDSO-G28 |
| JESD-609代码 | e0 |
| 内存密度 | 262144 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 28 |
| 字数 | 32768 words |
| 字数代码 | 32000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 32KX8 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | TSSOP |
| 封装等效代码 | TSSOP28,.53,22 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 并行/串行 | PARALLEL |
| 电源 | 3.3 V |
| 认证状态 | Not Qualified |
| 最大待机电流 | 0.015 A |
| 最小待机电流 | 3 V |
| 最大压摆率 | 0.11 mA |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING |
| 端子节距 | 0.55 mm |
| 端子位置 | DUAL |
| Base Number Matches | 1 |
| PDM31256SA20TI | PDM31256SA15TI | PDM31256SA17T | PDM31256SA17TI | PDM31256SA15T | PDM31256SA20T | PDM31256SA12T | |
|---|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 32KX8, 20ns, CMOS, PDSO28 | Standard SRAM, 32KX8, 15ns, CMOS, PDSO28 | Standard SRAM, 32KX8, 17ns, CMOS, PDSO28 | Standard SRAM, 32KX8, 17ns, CMOS, PDSO28 | Standard SRAM, 32KX8, 15ns, CMOS, PDSO28 | Standard SRAM, 32KX8, 20ns, CMOS, PDSO28 | Standard SRAM, 32KX8, 12ns, CMOS, PDSO28 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | TSSOP, TSSOP28,.53,22 | TSSOP, TSSOP28,.53,22 | TSSOP, TSSOP28,.53,22 | TSSOP, TSSOP28,.53,22 | TSSOP, TSSOP28,.53,22 | TSSOP, TSSOP28,.53,22 | TSSOP, TSSOP28,.53,22 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 20 ns | 15 ns | 17 ns | 17 ns | 15 ns | 20 ns | 12 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PDSO-G28 | R-PDSO-G28 | R-PDSO-G28 | R-PDSO-G28 | R-PDSO-G28 | R-PDSO-G28 | R-PDSO-G28 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| 字数 | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words |
| 字数代码 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 70 °C | 85 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | YES | YES | YES | YES | YES | YES | YES |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | TSSOP | TSSOP | TSSOP | TSSOP | TSSOP | TSSOP | TSSOP |
| 封装等效代码 | TSSOP28,.53,22 | TSSOP28,.53,22 | TSSOP28,.53,22 | TSSOP28,.53,22 | TSSOP28,.53,22 | TSSOP28,.53,22 | TSSOP28,.53,22 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.015 A | 0.015 A | 0.01 A | 0.015 A | 0.01 A | 0.01 A | 0.01 A |
| 最小待机电流 | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| 最大压摆率 | 0.11 mA | 0.12 mA | 0.12 mA | 0.12 mA | 0.12 mA | 0.11 mA | 0.13 mA |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子节距 | 0.55 mm | 0.55 mm | 0.55 mm | 0.55 mm | 0.55 mm | 0.55 mm | 0.55 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 厂商名称 | - | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc |
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