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MBR4015LWT
SWITCHMODEt
Schottky Power Rectifier
TO247 Power Package
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
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•
•
•
•
Highly Stable Oxide Passivated Junction
Guardring for Overvoltage Protection
Low Forward Voltage Drop
Dual Diode Construction; Terminals 1 and 3 May Be Connected for
Parallel Operation at Full Rating.
•
Full Electrical Isolation without Additional Hardware
•
Pb−Free Package is Available*
Mechanical Characteristics
SCHOTTKY BARRIER
RECTIFIER
40 AMPERES, 15 VOLTS
1
2
3
•
•
•
•
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 4.3 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V
R
, T
C
= 120°C)
Per Leg
Per Package
Peak Repetitive Forward Current,
(At Rated V
R
, Square Wave,
20 kHz, T
C
= 95°C)
Per Leg
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single Phase,
60 Hz) Per Package
Storage/Operating Case Temperature
Operating Junction Temperature (Note 1)
Voltage Rate of Change,
(Rated V
R
, T
J
= 25°C)
Symbol
V
RRM
V
RWM
V
R
I
O
Value
15
Unit
V
1
2
3
TO−247
CASE 340L
STYLE 2
MARKING DIAGRAM
A
20
40
40
A
MBR4015LWT
AYWWG
I
FRM
I
FSM
120
A
T
stg
, T
C
T
J
dv/dt
−55
to +150
−55
to +150
10,000
°C
°C
V/ms
MBR4015LWT
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
MBR4015LWT
MBR4015LWTG
Package
TO−247
TO−247
(Pb−Free)
Shipping
30 Units / Rail
30 Units / Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
March, 2010
−
Rev. 9
1
Publication Order Number:
MBR4015LWT/D
MBR4015LWT
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction−to−Case
Junction−to−Ambient
Per Leg
Per Leg
Symbol
R
qJC
R
qJA
Value
0.57
55
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Rating
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 Per Leg
(I
F
= 20 A)
(I
F
= 40 A)
Maximum Instantaneous Reverse Current (Note 2), See Figure 4 Per Leg
(V
R
= 15 V)
(V
R
= 7.5 V)
I
R
Symbol
V
F
Value
T
J
= 25°C
0.42
0.50
T
J
= 25°C
5.0
2.7
T
J
= 100°C
0.36
0.48
T
J
= 100°C
530
370
mA
Unit
V
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
2. Pulse Test: Pulse Width
≤
250
ms,
Duty Cycle
≤
2%.
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
1000
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
100
1000
100
T
J
= 100°C
10
T
J
= 25°C
1.0
T
J
= -40°C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
100
10
T
J
= 25°C
1.0
T
J
= 100°C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage Per Leg
Figure 2. Maximum Forward Voltage Per Leg
1.0E+0
I R, MAXIMUM REVERSE CURRENT (AMPS)
10E+0
I R, REVERSE CURRENT (AMPS)
10E+0
1.0E+0
T
J
= 100°C
100E-3
T
J
= 100°C
100E-3
10E-3
10E-3
T
J
= 25°C
1.0E-3
1.0E-3
T
J
= 25°C
0
5.0
10
15
100E-6
V
R
, REVERSE VOLTAGE (V)
100E-6
0
5.0
10
15
V
R
,
,
REVERSE VOLTAGE (VOLTS)
V
R
REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current Per Leg
Figure 4. Maximum Reverse Current Per Leg
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2
MBR4015LWT
I
F
, AVERAGE FORWARD CURRENT (A)
PFO , AVERAGE POWER DISSIPATION (WATTS)
40
DC
30
SQUAREWAVE
20
14
I
pk
/I
o
=
p
12
10
8.0
6.0
4.0
2.0
0
0
5.0
10
15
20
25
30
35
I
O
, AVERAGE FORWARD CURRENT (A)
I
pk
/I
o
= 10
I
pk
/I
o
= 20
I
pk
/I
o
= 5
SQUARE
WAVE
dc
10
0
0
20
40
60
80
100
120
140
T
C
, CASE TEMPERATURE (°C)
Figure 5. Current Derating Per Leg
Figure 6. Forward Power Dissipation Per Leg
T
J
, DERATED OPERATING TEMPERATURE
(°C)
10,000
T
J
= 25°C
C, CAPACITANCE (pF)
125
115
R
tja
= 21°C/W
105
95
42°C/W
85
60°C/W
75
75°C/W
65
0
2.0
4.0
6.0
8.0
10
12
14
16
V
R
, DC REVERSE VOLTAGE (V)
1000
100
0
2.0
4.0
6.0
8.0
10
12
14
16
V
R
, REVERSE VOLTAGE (V)
Figure 7. Capacitance Per Leg
Figure 8. Typical Operating Temperature
Derating Per Leg*
*Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
J
therefore must include forward and reverse power effects. The allowable operating
T
J
may be calculated from the equation: T
J
= T
Jmax
−
r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T
J
due to reverse bias under DC conditions only and is calculated as T
J
= T
Jmax
−
r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed.
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3
MBR4015LWT
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
50%
20%
10%
0.1
5.0%
2.0%
1.0%
Rtjl(t) = Rtjl*r(t)
0.01
0.00001
0.0001
0.001
0.01
T, TIME (s)
0.1
1.0
10
Figure 9. Thermal Response Junction to Lead (Per Leg)
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
50%
0.1
20%
10%
5.0%
0.01
2.0%
1.0%
0.001
Rtjl(t) = Rtjl*r(t)
0.0001
0.00001
0.0001
0.001
0.01
0.1
T, TIME (s)
1.0
10
100
1,000
Figure 10. Thermal Response Junction to Ambient (Per Leg)
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4
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