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MBM29PL64LM10PCN-E1: 产品描述Flash, 4MX16, 100ns, PDSO56, PLASTIC, TSOP1-56; 产品类别存储存储; 文件大小494KB，共72页; 制造商SPANSION; 官网地址http://www.spansion.com/; 标准

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MBM29PL64LM10PCN-E1概述

Flash, 4MX16, 100ns, PDSO56, PLASTIC, TSOP1-56

MBM29PL64LM10PCN-E1规格参数

参数名称	属性值
是否Rohs认证	符合
零件包装代码	TSOP1
包装说明	PLASTIC, TSOP1-56
针数	56
Reach Compliance Code	compliant
ECCN代码	3A991.B.1.A
最长访问时间	100 ns
备用内存宽度	8
JESD-30 代码	R-PDSO-G56
JESD-609代码	e3
长度	18.4 mm
内存密度	67108864 bit
内存集成电路类型	FLASH
内存宽度	16
功能数量	1
端子数量	56
字数	4194304 words
字数代码	4000000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-20 °C
组织	4MX16
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP1
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
编程电压	3 V
认证状态	Not Qualified
座面最大高度	1.2 mm
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	OTHER
端子面层	TIN
端子形式	GULL WING
端子节距	0.5 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	40
类型	NOR TYPE
宽度	14 mm
Base Number Matches	1

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MBM29PL64LM

90/10

Data Sheet

(Retired Product)

MBM29PL64LM

90/10

Cover Sheet

This product has been retired and is not recommended for new designs. Availability of this document is retained for reference

and historical purposes only.

Continuity of Specifications

There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been

made are the result of normal data sheet improvement and are noted in the document revision summary.

For More Information

Please contact your local sales office for additional information about Spansion memory solutions.

Publication Number

MBM29PL64LM

Revision

DS05-20902-2E

Issue Date

July 31, 2007

MBM29PL64LM

90/10

(Continued)

The standard MBM29PL64LM offers access times of 90 ns, allowing operation of high-speed microprocessors

without wait states. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE),

and output enable (OE) controls.

The MBM29PL64LM supports command set compatible with JEDEC single-power-supply EEPROMS standard.

Commands are written into the command register. The register contents serve as input to an internal state-

machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and

data needed for the programming and erase operations. Reading data out of the devices is similar to reading

from 5.0 V and 12.0 V Flash or EPROM devices.

The MBM29PL64LM is programmed by executing the program command sequence. This will invoke the Em-

bedded Program Algorithm

which is an internal algorithm that automatically times the program pulse widths

and verifies proper cell margin. Erase is accomplished by executing the erase command sequence. This will

invoke the Embedded Erase Algorithm

which is an internal algorithm that automatically preprograms the array

if it is not already programmed before executing the erase operation. During erase, the device automatically

times the erase pulse widths and verifies proper cell margin.

The device also features a sector erase architecture. The sector mode allows each sector to be erased and

reprogrammed without affecting other sectors. All sectors are erased when shipped from the factory.

The device features single 3.0 V power supply operation for both read and write functions. Internally generated

and regulated voltages are provided for the program and erase operations. A low V

detector automatically

inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ

by the Toggle Bit feature on DQ

. Once the end of a program or erase cycle has been completed, the devices

internally return to the read mode.

Fujitsu Flash technology combines years of Flash memory manufacturing experience to produce the highest

levels of quality, reliability, and cost effectiveness. The devices electrically erase all bits within a sector simulta-

neously via hot-hole assisted erase. The words are programmed one word at a time using the EPROM program-

ming mechanism of hot electron injection.

Retired Product DS05-20902-2E_July 31, 2007

MBM29PL64LM10PCN-E1相似产品对比

	MBM29PL64LM10PCN-E1	MBM29PL64LM90PBT-E1	MBM29PL64LM90PCN-E1	MBM29PL64LM10PBT-E1	MBM29PL64LM90TN-E1	MBM29PL64LM10TN-E1
描述	Flash, 4MX16, 100ns, PDSO56, PLASTIC, TSOP1-56	Flash, 4MX16, 90ns, PBGA80, PLASTIC, FBGA-80	Flash, 4MX16, 90ns, PDSO56, PLASTIC, TSOP1-56	Flash, 4MX16, 100ns, PBGA80, PLASTIC, FBGA-80	Flash, 4MX16, 90ns, PDSO48, PLASTIC, TSOP1-48	Flash, 4MX16, 100ns, PDSO48, PLASTIC, TSOP1-48
是否Rohs认证	符合	符合	符合	符合	符合	符合
零件包装代码	TSOP1	BGA	TSOP1	BGA	TSOP1	TSOP1
包装说明	PLASTIC, TSOP1-56	PLASTIC, FBGA-80	PLASTIC, TSOP1-56	PLASTIC, FBGA-80	PLASTIC, TSOP1-48	PLASTIC, TSOP1-48
针数	56	80	56	80	48	48
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A
最长访问时间	100 ns	90 ns	90 ns	100 ns	90 ns	100 ns
备用内存宽度	8	8	8	8	8	8
JESD-30 代码	R-PDSO-G56	R-PBGA-B80	R-PDSO-G56	R-PBGA-B80	R-PDSO-G48	R-PDSO-G48
JESD-609代码	e3	e1	e3	e1	e3	e3
长度	18.4 mm	11 mm	18.4 mm	11 mm	18.4 mm	18.4 mm
内存密度	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit
内存集成电路类型	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
内存宽度	16	16	16	16	16	16
功能数量	1	1	1	1	1	1
端子数量	56	80	56	80	48	48
字数	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
字数代码	4000000	4000000	4000000	4000000	4000000	4000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	70 °C	70 °C	85 °C	70 °C	85 °C
最低工作温度	-20 °C	-20 °C	-20 °C	-20 °C	-20 °C	-20 °C
组织	4MX16	4MX16	4MX16	4MX16	4MX16	4MX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP1	TFBGA	TSOP1	TFBGA	TSOP1	TSOP1
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	260	260	260	260	260
编程电压	3 V	3 V	3 V	3 V	3 V	3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	OTHER	COMMERCIAL	COMMERCIAL	OTHER	COMMERCIAL	OTHER
端子面层	TIN	TIN SILVER COPPER	TIN	TIN SILVER COPPER	MATTE TIN	TIN
端子形式	GULL WING	BALL	GULL WING	BALL	GULL WING	GULL WING
端子节距	0.5 mm	0.8 mm	0.5 mm	0.8 mm	0.5 mm	0.5 mm
端子位置	DUAL	BOTTOM	DUAL	BOTTOM	DUAL	DUAL
处于峰值回流温度下的最长时间	40	40	40	40	40	40
类型	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
宽度	14 mm	7 mm	14 mm	7 mm	12 mm	12 mm
Base Number Matches	1	1	1	1	-	-

MBM29PL64LM10PCN-E1

MBM29PL64LM10PCN-E1概述

MBM29PL64LM10PCN-E1规格参数

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