RN2501~RN2506
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2501,RN2502,RN2503
RN2504,RN2505,RN2506
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in SMV (super mini type with 5 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1501 to RN1506
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN2501
RN2502
RN2503
RN2504
RN2505
RN2506
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
SMV
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: 14 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2501 to 2506
RN2501 to 2506
RN2501 to 2504
RN2505, 2506
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
Tj
Tstg
Rating
−50
−50
−10
−5
−100
300
150
−55
to150
Unit
V
V
V
mA
mW
°C
°C
Equivalent Circuit
(Top View)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
1
2010-05-20
RN2501~RN2506
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off current
RN2501 to 2506
RN2501
RN2502
Emitter cut-off current
RN2503
RN2504
RN2505
RN2506
RN2501
RN2502
DC current gain
RN2503
RN2504
RN2505
RN2506
Collector-emitter
saturation voltage
RN2501 to 2506
RN2501
RN2502
Input voltage (ON)
RN2503
RN2504
RN2505
RN2506
Input voltage (OFF)
Transition frequency
Collector output
capacitance
RN2501 to 2504
RN2505, 2506
RN2501 to 2506
RN2501 to 2506
RN2501
RN2502
Input resistor
RN2503
RN2504
RN2505
RN2506
RN2501 to 2504
Resistor ratio
RN2505
RN2506
R1/R2
R1
V
I (OFF)
f
T
C
ob
V
I (ON)
V
CE (sat)
h
FE
I
EBO
Symbol
I
CBO
I
CEO
Test
Circuit
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
V
CE
=
−5V
I
C
=
−0.1mA
V
CE
=
−10V
I
C
=
−5mA
V
CB
=
−10V,
I
E
= 0
f = 1MHz
V
CE
=
−0.2V
I
C
=
−5mA
I
C
=
−5mA
I
B
=
−0.25mA
V
CE
=
−5V
I
C
=
−10mA
V
EB
=
−5V,
I
C
= 0
V
EB
=
−10V,
I
C
= 0
Test Condition
V
CB
=
−50V,
I
E
= 0
V
CE
=
−50V,
I
B
= 0
Min
―
―
−0.82
−0.38
−0.17
−0.082
−0.078
−0.074
30
50
70
80
80
80
―
−1.1
−1.2
−1.3
−1.5
−0.6
−0.7
−1.0
−0.5
―
―
3.29
7
15.4
32.9
1.54
3.29
0.9
Typ.
―
―
―
―
―
―
―
―
―
―
―
―
―
―
−0.1
―
―
―
―
―
―
―
―
200
3
4.7
10
22
47
2.2
4.7
1.0
Max
−100
−500
−1.52
−0.71
−0.33
−0.15
−0.145
−0.138
―
―
―
―
―
―
−0.3
−2.0
−2.4
−3.0
−5.0
−1.1
−1.3
−1.5
−0.8
―
6
6.11
13
28.6
61.1
2.86
6.11
1.1
―
kΩ
V
MHz
pF
V
V
―
mA
Unit
nA
0.0421 0.0468 0.0515
0.09
0.1
0.11
2
2010-05-20
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