SFT5001
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFT5001 __ __ __ __
│ │ │ └
Screening
2/
__
= Not Screened
│ │ │
TX = TX Level
│ │ │
TXV = TXV Level
│ │ │
S = S Level
│ │ │
│ │ └
Lead Bend
3/ 4/
__
= Straight Leads
│ │
UB = Up Bend
│ │
DB = Down Bend
│ └
Pin Out Configuration
5/
__ = Normal
│
R = Optional
│
└
Package
3/
/59 = TO-59
/66 = TO-66
J = TO-257
S.5 = SMD .5
5 AMPS
125 Volts
High Speed
PNP Transistor
•
•
•
•
•
•
•
Features:
Radiation Tolerant
Superior to JEDEC 2N5001 Series
High Frequency, f
T
> 80MHz
Very Low Saturation
Fast Switching, 130 ns Max t(on)
Designed for Complementary Use with
SFT3997
TX, TXV, S-Level Screening Available.
Consult Factory.
Maximum Ratings
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T
C
= 100ºC
Derate Above 100ºC
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
T
J
& T
STG
R
0JC
Value
80
125
7
5
1
30
0.3
-65 to +200
3.33
Units
Volts
Volts
Volts
Amps
Amps
Watts
W/ºC
ºC
ºC/W
TO-59 (/59)
TO-66 (/66)
TO-257 (J)
SMD .5 (S.5)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0099A
DOC
SFT5001
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
Collector – Emitter Blocking Voltage *
Collector – Base Blocking Voltage
Emitter – Base Blocking Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain *
(I
C
= 10 mA)
(I
C
= 20 µA)
(I
E
= 20 µA)
(V
CE
= 40 V)
(V
CB
= 100 V)
(V
EB
= 6 V)
(I
C
= 50 mA, V
CE
= 5 V)
(I
C
= 1.0 A, V
CE
= 5 V)
(I
C
= 5.0 A, V
CE
= 5 V)
(I
C
= 1.0 A, I
B
= 100 mA)
(I
C
= 5.0 A, I
B
= 500 mA)
(I
C
= 1.0 A, I
B
= 100 mA)
(I
C
= 5.0 A, I
B
= 500 mA)
V
CE
= 5 V, I
C
= 0.5 A, f = 10 MHz
V
CB
= 10 V, I
E
= 0 A, f = 1.0 MHz
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CEO
I
CBO
I
EBO
h
FE
V
CE (SAT)
V
B E (SAT)
f
T
C
ob
t
(on)
t
(off)
t
d
t
r
t
s
t
f
Min
80
125
7
––
––
––
50
50
30
––
––
––
––
80
––
––
––
––
––
Max
––
––
––
10
1.0
1.0
––
––
––
0.5
1.0
0.9
1.2
––
75
150
500
Units
Volts
Volts
Volts
μA
μA
μA
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Current Gain – Bandwidth Product
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact
Factory.
2/ Screening per MIL-PRF-19500
3/ For Package Outlines Contact Factory.
Volts
Volts
MHz
pF
ns
ns
(V
CC
= 20 V, I
C
= 1.0 A, V
BE (off)
= 3.7 V, I
B1
= I
B2
= 100 mA,
R
L
= 20
Ω)
4/ Up and Down Bend Configurations are Available for ‘J’ (TO-
257) Packages Only.
5/ Optional Pin Out Configurations are Available for ‘J’ (TO-
257) Packages Only.
6/ Unless Otherwise Specified, All Electrical Characteristics
@25ºC.
PIN ASSIGNMENT (Standard)
Package
Collector
Emitter
TO-59 (/59)
Pin 1
Pin 2
TO-66 (/66)
Case
Pin 2
TO-257 (J)
Pin 1
Pin 2
SMD .5 (S.5)
Pin 1
Pin 2
PIN ASSIGNMENT (Optional)
Package
Collector
Emitter
TO-257 (JR)
Pin 2
Pin 3
Available Part Numbers:
SFT5001/59 SFT5001/66 SFT5001J SFT5001JUB
SFT5001JDB SFT5001JR SFT5001JRUB SFT5001JRDB
SFT5001S.5
Base
Pin 3
Pin 3
Pin 3
Pin 3
Base
Pin 1
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