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SMBG2K5.0E3/TR

产品描述Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2 PIN
产品类别分立半导体    二极管   
文件大小169KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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SMBG2K5.0E3/TR概述

Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2 PIN

SMBG2K5.0E3/TR规格参数

参数名称属性值
是否Rohs认证符合
包装说明R-PDSO-G2
Reach Compliance Codecompliant
ECCN代码EAR99
最小击穿电压5.9 V
最大钳位电压7.6 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-215AA
JESD-30 代码R-PDSO-G2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散300 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散1.38 W
认证状态Not Qualified
最大重复峰值反向电压5 V
表面贴装YES
技术AVALANCHE
端子面层MATTE TIN
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

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SMBJ2K3.0 thru SMBJ2K5.0, e3
SMBG2K3.0 thru SMBG2K5.0, e3
SCOTTSDALE DIVISION
UNIDIRECTIONAL LOW VOLTAGE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
APPEARANCE
WWW .
Microsemi
.C
OM
DESCRIPTION
The SMBJ2K3.0-5.0 or SMBG2K3.0-5.0 series of surface mount 2000 Watt
unidirectional Transient Voltage Suppressors (TVSs) provide low voltage
transient protection in a Working Standoff Voltage (V
WM
) selections from 3.0
to 5.0 volts. Response time of clamping action is virtually instantaneous and
may also be used for protection from ESD or EFT per IEC61000-4-2 and
IEC61000-4-4, or for inductive switching environments and induced RF.
They can also be used for protecting other sensitive components from
secondary lightning effects per IEC61000-4-5 and class levels defined
herein. Microsemi also offers numerous other TVS products to meet higher
and lower power demands and special applications. Also available in military
equivalent screening levels by adding a prefix identifier as further described
in the Features section. Microsemi also offers numerous other TVS products
to meet higher and lower power applications.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
Suppresses transients up to 2000 watts @ 8/20 µs (see
Figure 1 and 2)
Fast response
Optional 100%
screening for avionics grade
is available
by adding MA prefix to part number for added 100%
temperature cycle -55
o
C to +125
o
C (10X) as well as surge
(3X) and 24 hours HTRB with post test V
Z
& I
R
(in the
operating direction for unidirectional or both directions for
bidirectional)
Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, and JANTXV are available by adding
MQ, MX, or MV prefixes respectively to part numbers.
Moisture classification is Level 1 with no dry pack required
per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding “e3” suffix
Consult factory for bidirectional options
APPLICATIONS / BENEFITS
Selections for 3.0 to 5.0 V Working Peak Standoff
(V
WM
) voltage
Economical unidirectional TVS series in surface
mount with flat handling surface for accurate
placement
Voltage and reverse (leakage) current lowest
available
Protects sensitive components such as IC’s,
2
CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching transients & induced RF
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance for Class 1
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25
o
C: 2000 watts at 8/20
μs
or 300 Watts at 10/1000
μs
(also see Figure 1 and 4)
Clamping Voltage at 10 Amps @ 8/20
μs
shown on page 2
Impulse repetition rate (duty factor): 0.01% maximum
t
clamping
(0 volts to
V
(BR)
min.): < 100 ps
Operating and Storage temperature: -65
o
C to +150
o
C
º
º
Thermal resistance: 25 C/W junction to lead, or 90 C/W
junction to ambient when mounted on FR4 PC board (1oz
Cu) with recommended footprint (see last page)
Steady-State Power dissipation: 5 watts at T
L
= 25
o
C, or
1.38 watts at T
A
= 25
º
C when mounted on FR4 PC board
with recommended footprint
Forward Voltage at 25
o
C: 3.5 Volts maximum @ 30 Amp
peak impulse of 8.3 ms half-sine wave (unidirectional only)
Solder temperatures: 260
o
C for 10 s (maximum)
Copyright
©
2007
6-21-2007 REV G
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
FINISH: Tin-Lead or RoHS compliant annealed
matte-Tin plating over copper readily solderable
per MIL-STD-750, method 2026
MARKING: Body marked without SMBJ or SMBG
part number prefix, e.g. 2K3.0, 2K3.3, 2K4.0, etc.
POLARITY: Band denotes cathode
WEIGHT: 0.1 grams (approximate)
TAPE & REEL option: Standard per EIA-481-1-A
with 12 mm tape, 750 per 7 inch reel or 2500 per
13 inch reel (add “TR” suffix to part number)
See package dimensions on last page
SMBG&J2K3.0-5.0
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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