IRGS4062D概述

Insulated Gate Bipolar Transistor, TO-263AB, PLASTIC, D2PAK-3

IRGS4062D规格参数

参数名称	属性值
零件包装代码	D2PAK
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	3
Reach Compliance Code	unknown
JEDEC-95代码	TO-263AB
JESD-30 代码	R-PSSO-G2
端子数量	2
最高工作温度	175 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	SINGLE
Base Number Matches	1

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ENERGY SAVINGS

THE POWER MANAGEMENT LEADER

FEATURES & BENEFITS

• Lower conduction and switching losses

compared to previous generation IGBTs.

• 175˚C maximum junction temperature.

• Square Reverse Bias Operating Area (RBSOA).

• 100% tested for clamped inductive load.

• Increased current density from the

same package.

• Positive V

CE(ON)

temperature co-efficient

Reduce Power Dissipation in UPS,

Welding and Solar Inverter Applications

600V Trench Field Stop IGBTs

International Rectifier’s family of 600V insulated gate bipolar transistors (IGBTs) reduces

power dissipation in uninterruptible power supply (UPS), welding, and solar inverter

applications up to 20 kW.

These devices use IR’s latest-generation field stop trench technology to reduce conduction

and switching losses, and are optimized for switching between 8-30 kHz with short circuit

requirements, enabling higher efficiency power conversion in UPS, welding and solar

inverter applications. Additionally these devices exhibit a postive V

CE(ON)

) temperature co-

efficient, which allows for easy paralleling of multiple IGBTs.

Co-packaged with ultrafast soft recovery diodes, this family of IGBTs has lower collector-

to-emitter saturation voltage (VCE(on)) and total switching energy (ETS) than punch-

through (PT) and non-punch-through (NPT) type IGBTs. In addition, the internal ultrafast

soft recovery diode improves efficiency and reduces EMI.

For more information, call 310-252-7105 or visit us at www.irf.com

10158A_FS

IRGS4062D相似产品对比

	IRGS4062D	IRGSL4062D	IRGB4056D	IRGP4062D	IRGB4062D	IRGB4061D
描述	Insulated Gate Bipolar Transistor, TO-263AB, PLASTIC, D2PAK-3	Insulated Gate Bipolar Transistor, TO-262AA, PLASTIC, TO-262, 3 PIN	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB	Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-247AC	Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB	Insulated Gate Bipolar Transistor, 36A I(C), 600V V(BR)CES, N-Channel, TO-220AB
包装说明	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown	compliant	compliant	compliant	compliant
JEDEC-95代码	TO-263AB	TO-262AA	TO-220AB	TO-247AC	TO-220AB	TO-220AB
JESD-30 代码	R-PSSO-G2	R-PSIP-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
端子数量	2	3	3	3	3	3
最高工作温度	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	IN-LINE	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	NO	NO	NO	NO	NO
端子形式	GULL WING	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
厂商名称	-	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
是否无铅	-	-	含铅	含铅	含铅	含铅
是否Rohs认证	-	-	不符合	不符合	不符合	不符合
外壳连接	-	-	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	-	-	24 A	48 A	48 A	36 A
集电极-发射极最大电压	-	-	600 V	600 V	600 V	600 V
配置	-	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
JESD-609代码	-	-	e0	e0	e0	e0
元件数量	-	-	1	1	1	1
峰值回流温度（摄氏度）	-	-	225	225	225	225
极性/信道类型	-	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
端子面层	-	-	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
处于峰值回流温度下的最长时间	-	-	30	30	30	30
晶体管应用	-	-	POWER CONTROL	POWER CONTROL	POWER CONTROL	POWER CONTROL
晶体管元件材料	-	-	SILICON	SILICON	SILICON	SILICON
标称断开时间 (toff)	-	-	143 ns	164 ns	164 ns	160 ns
标称接通时间 (ton)	-	-	48 ns	64 ns	64 ns	65 ns

IRGS4062D

IRGS4062D概述

IRGS4062D规格参数

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IRGS4062D相似产品对比

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