SMF5.0A thru SMF188A
New Product
Vishay Semiconductors
formerly General Semiconductor
Surface Mount TransZorb
®
Transient Voltage Suppressors
DO-219 (SMF)
Cathode Band
Top View
ted
ten
Pa
1.0
±
0.2
Stand-off Voltage
5.0 to 188V
Peak Pulse Power
1000W (8/20ms pulse)
200W (10/1000ms pulse)
Mounting Pad Layout
1.6
1.2
1.8
±
0.1
Dimensions in
millimeters
1.2
2.8
±
0.1
5°
0.98
±
0.1
5°
Z
0.05 - 0.30
Detail
Z
enlarged
0.60
±
0.25
Features
0.00 – 0.10
3.7
±
0.2
Mechanical Data
Case:
Low-profile plastic case
Terminals:
Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity:
The band denotes the cathode, which is
positive with respect to the anode under normal
TVS operation
Mounting Position:
Any
Weight:
approx. 0.01g
Packaging codes-options:
G1-10K per 13” reel (8mm tape), 50K/box
G2-3K per 7” reel (8mm tape), 30K/box
•
•
•
•
For surface mounted applications.
Low-profile package
Optimized for LAN protection applications
Ideal for ESD protection of data lines in accordance
with IEC 1000-4-2 (IEC801-2)
• Ideal for EFT protection of data lines in accor-
dance with IEC 1000-4-4 (IEC801-4)
• Glass passivated junction
• Low incremental surge resistance, excellent
clamping capability
• 200W peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01%
(150W above 78V)
• Very fast response time
• High temperature soldering guaranteed:
250°C/10 seconds at terminals
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Peak pulse power dissipation with a 10/1000µs waveform
(1)
8/20µs waveform
Peak pulse current with a 10/1000µs waveform
(1)
Peak forward surge current 8.3ms single half sine-wave
uni-directional only
Operating junction and storage temperature range
Note:
(1) Non-repetitive current pulse and derated above T
A
= 25°
Rating is 150W (10/1000µs pulse) above 78V
Symbol
P
PPM
I
PPM
I
FSM
T
J
, T
STG
Value
200
1000
See Next Table
20
–55 to +150
Unit
W
A
A
°C
Document Number 88433
12-Sep-02
www.vishay.com
1
SMF5.0A thru SMF188A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. V
Device
Marking
Code
AE
AG
AK
AM
AP
AR
AT
AV
AX
AZ
BE
BG
BK
BM
BP
BR
BT
BV
BX
BZ
CE
CG
CK
CM
CP
CR
CT
CV
CX
CZ
Breakdown
Voltage at I
T
V
(BR)
(V)
Min
(1)
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
Test
Current
I
T
(mA)
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1'0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
F
= 3.5V at I
F
= 12A (uni-directional only)
Device Type
SMF5.0A
SMF6.0A
SMF6.5A
SMF7.0A
SMF7.5A
SMF8.0A
SMF8.5A
SMF9.0A
SMF10A
SMF11A
SMF12A
SMF13A
SMF14A
SMF15A
SMF16A
SMF17A
SMF18A
SMF20A
SMF22A
SMF24A
SMF26A
SMF28A
SMF30A
SMF33A
SMF36A
SMF40A
SMF43A
SMF45A
SMF48A
SMF51A
Maximum
Maximum
Reverse Leakage Peak Pulse Surge
at V
WM
Current I
PPM
I
D
(µA)
(A)
(2,3)
400
400
250
100
50
25
10
5.0
2.5
2.5
2.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
16.3
14.6
13.4
12.5
11.6
11.0
10.4
9.7
8.8
8.2
7.5
7.0
6.5
6.1
5.8
5.4
5.1
4.6
4.2
3.9
3.6
3.3
3.1
2.8
2.6
2.3
2.2
2.1
1.9
1.8
Maximum
Clamping
Voltage at I
PPM
V
C
(V)
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs square wave pulse or equivalent
(2) Surge current waveform: 10/1000µs
(3) SMF78A and below can withstand higher currents (to 200W for10/1000µs pulse), but V
C
must be increased by approximately 5% (I
pp
= 200W/V
C
)
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88433
12-Sep-02
SMF5.0A thru SMF188A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. V
Device
Marking
Code
RE
RG
RK
RM
RP
RR
RT
RV
RX
RZ
SE
SG
SK
SM
SP
SR
SS
Breakdown
Voltage
V
(BR)
(V)
(1)
(Min)
60.0
64.4
66.7
71.1
77.8
83.3
86.7
94.4
100
111
122
133
144
167
178
189
209
Test
Current
at I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
188
F
= 3.5V at I
F
= 12A (uni-directional only)
Device Type
SMF54A
SMF58A
SMF60A
SMF64A
SMF70A
SMF75A
SMF78A
SMF85A
SMF90A
SMF100A
SMF110A
SMF120A
SMF130A
SMF150A
SMF160A
SMF170A
SMF188A
Maximum
Maximum
Reverse Leakage Peak Pulse Surge
at V
WM
Current I
PPM
I
D
(µA)
(A)
(2,3)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.7
1.6
1.5
1.5
1.3
1.2
1.2
1.1
1.0
0.9
0.8
0.8
0.7
0.6
0.6
0.5
0.5
Maximum
Clamping
Voltage at I
PPM
V
C
(V)
87.1
93.6
96.8
103
113
121
126
137
146
162
177
193
209
243
259
275
328
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs square wave pulse or equivalent
(2) Surge current waveform: 10/1000µs
(3) SMF78A and below can withstand higher currents (to 250W for10/1000µs pulse), but V
C
must be increased by approximately 5% (I
pp
= 250W/V
C
)
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
Document Number 88433
12-Sep-02
www.vishay.com
3
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