KM616V4000B, KM616U4000B Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
0.1
History
Initial draft
Revise
- Die name change ; A to B
Finalize
Revise
- Operating current update and release.
I
CC
(Read/Write) = 20/40
→
10/45mA
I
CC1
(Read/Write) = 20/40
→
10/45mA
I
CC2
= 90
→
70mA
Revise
- Change datasheet format
- Erase 70ns part from KM616V4000BI, KM616U4000B and
KM616U4000BI Family
- Power dissipation improved 0.7 to 1.0W
- V
IL
(MAX) improved 0.4 to 0.6V.
- I
CC2
decreased 70 to 60mA.
- Erase 100ns from KM616V4000B commercial product
Error correction
Draft Data
June 28, 1996
September 19, 1996
Remark
Advance
Preliminary
1.0
2.0
December 17, 1996
February 17, 1997
Final
Final
3.0
January 14, 1998
Final
3.01
August 7, 1998
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 3.01
January 1998
KM616V4000B, KM616U4000B Family
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
•
Process Technology : TFT
•
Organization : 256K x16
•
Power Supply Voltage
KM68V4000B Family : 3.0~3.6V
KM68U4000B Family : 2.7~3.3V
•
Low Data Retention Voltage : 2V(Min)
•
Three state output and TTL Compatible
•
Package Type : 44-TSOP2-400F/R
CMOS SRAM
GENERAL DESCRIPTION
The KM616V4000B and KM616U4000B families are fabricated
by SAMSUNG′s advanced CMOS process technology. The
families support various operating temperature range and have
small package types for user flexibility of system design. The
families also support low data retention voltage for battery
back-up operation with low data retention current.
PRODUCT FAMILY
Product
List
KM616V4000BL-L
KM616V4000BLI-L
KM616U4000BL-L
KM616U4000BLI-L
Operating
Temperature
Commercial(0~70°C)
Industrial(-40~85°C)
Commercial(0~70°C)
Industrial(-40~85°C)
Vcc
Range
3.0~3.6V
3.0~3.6V
2.7~3.3V
2.7~3.3V
Speed
(ns)
70
1)
/85
1)
85
1)
/100
85 /100
85
1)
/100
1)
Power Dissipation
Standby
(I
SB1
, Max)
15µA
20µA
15µA
20µA
60mA
44-TSOP2-F/R
Operating
(I
CC2
)
PKG Type
1. The parameter is measured with 30pF test load.
PIN DESCRIPTION
A4
A3
A2
A1
A0
CS
I/O1
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
A12
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
A12
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
A13
A14
A0
A1
A15
A16
A17
A2
A3
A4
I/O
1
~I/O
8
Precharge circuit.
Vcc
Vss
44-TSOP2
Forward
44-TSOP2
Reverse
Row
select
Memory array
1024 rows
256×16 columns
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
I/O
9
~I/O
16
A8 A9 A10 A5 A6 A7 A4 A12
Name
CS
OE
WE
A
0
~A
17
Function
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Name
LB
UB
Vcc
Vss
N.C
Function
Lower Byte (I/O
1~8
)
Upper Byte(I/O
9~16
)
Power
Ground
No Connection
WE
OE
UB
LB
CS
Control
logic
I/O
1
~I/O
16
Data Inputs/Outputs
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Revision 3.01
January 1998
2
KM616V4000B, KM616U4000B Family
PRODUCT LIST
Commercial Temperature Product(0~70°C)
Part Name
KM616V4000BLT-7L
KM616V4000BLT-8L
KM616V4000BLR-7L
KM616V4000BLR-8L
KM616U4000BLT-8L
KM616U4000BLT-10L
KM616U4000BLR-8L
KM616U4000BLR-10L
Function
44-TSOP2-F, 70ns, 3.3V,LL
44-TSOP2-F, 85ns, 3.3V,LL
44-TSOP2-R, 70ns, 3.3V,LL
44-TSOP2-R, 85ns, 3.3V,LL
44-TSOP2-F, 85ns, 3.0V,LL
44-TSOP2-F, 100ns, 3.0V,LL
44-TSOP2-R, 85ns, 3.0V,LL
44-TSOP2-R, 100ns, 3.0V,LL
CMOS SRAM
Industrial Temperature Products(-40~85°C)
Part Name
KM616V4000BLTI-8L
KM616V4000BLTI-10L
KM616V4000BLRI-8L
KM616V4000BLRI-10L
KM616U4000BLTI-8L
KM616U4000BLTI-10L
KM616U4000BLRI-8L
KM616U4000BLRI-10L
Function
44-TSOP2-F, 85ns, 3.3V,LL
44-TSOP2-F, 100ns, 3.3V,LL
44-TSOP2-R, 85ns, 3.3V,LL
44-TSOP2-R, 100ns, 3.3V,LL
44-TSOP2-F, 85ns, 3.0V,LL
44-TSOP2-F, 100ns, 3.0V,LL
44-TSOP2-R, 85ns, 3.0V,LL
44-TSOP2-R, 100ns, 3.0V,LL
FUNCTIONAL DESCRIPTION
CS
H
L
L
L
L
L
L
L
L
OE
X
1)
H
X
1)
L
L
L
X
1)
X
1)
X
1)
WE
X
1)
H
X
1)
H
H
H
L
L
L
LB
X
1)
X
1)
H
L
H
L
L
H
L
UB
X
1)
X
1)
H
H
L
L
H
L
L
I/O
1~8
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
I/O
9~16
High-Z
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
Mode
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Standby
Active
Active
Active
Active
Active
Active
Active
Active
1. X means don′t care. (Must be in low or high state)
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Symbol
V
IN
,V
OUT
V
CC
P
D
T
STG
Ratings
-0.5 to V
CC
+0.5
-0.3 to 4.6
1.0
-65 to 150
0 to 70
Operating Temperature
T
A
-40 to 85
Soldering temperature and time
T
SOLDER
260°C, 10sec (Lead Only)
°C
-
Unit
V
V
W
°C
°C
Remark
-
-
-
-
KM616V4000BL-L
KM616U4000BL-L
KM616V4000BLI-L
KM616U4000BLI-L
-
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 3.01
January 1998
KM616V4000B, KM616U4000B Family
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Vcc
Vss
V
IH
V
IL
Product
KM616V4000B Family
KM616U4000B Family
All Family
KM616V4000B, KM616U4000B Family
KM616V4000B, KM616U4000B Family
Min
3.0
2.7
0
2.2
-0.3
3)
Typ
3.3
3.0
0
-
-
CMOS SRAM
Max
3.6
3.3
0
Vcc+0.3
2)
0.6
Unit
V
V
V
V
Note:
1. Commercial Product : T
A
=0 to 70°C, otherwise specified
Industrial Product : T
A
=-40 to 85°C, otherwise specified
2. Overshoot : V
CC
+3.0V in case of pulse width
≤
30ns
3. Undershoot : -3.0V in case of pulse width
≤
30ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1)
(f=1MHz, T
A
=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Operating power supply current
Symbol
I
LI
I
LO
I
CC
I
CC1
I
CC2
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
1. Industrial product = 20µA
Test Conditions
V
IL
=Vss to Vcc
CS=V
IH
or OE=V
IH
or WE=V
IL
V
IO
=Vss to Vcc
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
, Read
Cycle time=1µs, 100% duty, I
IO
=0mA
CS≤0.2V, V
IN
≤0.2V
or V
IN
≥Vcc-0.2V
Read
Write
Min
-1
-1
-
-
-
-
-
2.2
-
-
Typ
-
-
-
-
-
-
-
-
-
-
Max
1
1
10
8
45
60
0.4
-
0.5
15
1)
Unit
µA
µA
mA
mA
mA
V
V
mA
µA
Average operating current
Cycle time=Min, 100% duty, I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
V
OL
V
OH
I
SB
I
SB1
I
OL
=2.1mA
I
OH
=-1.0mA
CS=V
IH,
Other inputs=V
IL
or V
IH
CS≥Vcc-0.2V, Others inputs = 0~Vcc
4
Revision 3.01
January 1998
KM616V4000B, KM616U4000B Family
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Input/Output Reference)
Input pulse level : 0.4 to 2.2V
Input rising and falling time : 5ns
Input and output reference voltage :1.5V
Output load(see right) : C
L
=100pF+1TTL
C
L
=30pF+1TTL
CMOS SRAM
C
L
1
)
1.Including scope and jig capacitance
AC CHARACTERISTICS
(KM616V4000B Family :Vcc=3.0~3.6V, KM616U4000B Family :Vcc=2.7~3.3V,
Commercial product : T
A=
0 to 70°C, Industrial product : T
A
=-40 to 85°C)
Speed Bins
Parameter List
Symbol
70ns
1)
Min
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Chip select to low-Z output
Read
Output enable to low-Z output
UB, LB enable to low-Z output
Chip disable to high-Z output
OE disable to high-Z output
Output hold from address change
LB, UB valid to data output
UB, LB disable to high-Z output
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
LB, UB valid to end of write
1. The parameter is measured with 30pF test load
.
85ns
1)
Min
85
-
-
-
10
5
5
0
0
10
-
0
85
70
0
70
55
0
0
35
0
5
70
Max
-
85
85
40
-
-
-
25
25
-
40
25
-
-
-
-
-
-
25
-
-
-
-
-
100ns
Min
100
-
-
-
10
5
5
0
0
15
-
0
100
80
0
80
70
0
0
40
0
5
80
Max
-
100
100
50
-
-
-
30
30
-
50
30
-
-
-
-
-
-
30
-
-
-
-
Units
Max
t
RC
t
AA
t
CO
t
OE
t
LZ
t
OLZ
t
BLZ
t
HZ
t
OHZ
t
OH
t
BA
t
BHZ
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
t
BW
70
-
-
-
10
5
5
0
0
10
-
0
70
60
0
60
55
0
0
30
0
5
60
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
70
70
35
-
-
-
25
25
-
35
25
-
-
-
-
-
-
25
-
-
-
-
DATA RETENTION CHARACTERISTICS
Item
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
1. Industrial product = 20µA
Symbol
V
DR
I
DR
t
SDR
t
RDR
Test Condition
CS≥Vcc-0.2V
Vcc=3.0V, CS≥Vcc-0.2V
See data retention waveform
Min
2.0
-
0
5
Typ
-
0.5
-
-
Max
3.6
15
1)
-
-
Unit
V
µA
ms
5
Revision 3.01
January 1998
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
