ZXMD63P02X
DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=-20V; R
DS(ON)
=0.27 ; I
D
=-1.7A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
•
•
•
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
MSOP8
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXMD63P02XTA
ZXMD63P02XTC
REEL SIZE
(inches)
7
13
TAPE WIDTH (mm)
12mm embossed
12mm embossed
QUANTITY
PER REEL
1000 units
4000 units
Top View
DEVICE MARKING
•
ZXM63P02
ISSUE 1 - JUNE 2004
1
ZXMD63P02X
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current (V
GS
=4.5V; T
A
=25°C)(b)(d)
(V
GS
=4.5V; T
A
=70°C)(b)(d)
Pulsed Drain Current (c)(d)
Continuous Source Current (Body Diode)(b)(d)
Pulsed Source Current (Body Diode)(c)(d)
Power Dissipation at T
A
=25°C (a)(d)
Linear Derating Factor
Power Dissipation at T
A
=25°C (a)(e)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
P
D
P
D
P
D
T
j
:T
stg
LIMIT
-20
±
12
-1.7
-1.35
-9.6
-1.4
-9.6
0.87
6.9
1.04
8.3
1.25
10
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
Junction to Ambient (a)(e)
SYMBOL
R
θJA
R
θJA
R
θJA
VALUE
143
100
120
UNIT
°C/W
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 1 - JUNE 2004
2
ZXMD63P02X
CHARACTERISTICS
Max Power Dissipation (Watts)
100
Refer Note (a)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Refer Note (b)
Refer Note (a)
ID - Drain Current (A)
10
1
0.1
DC
1s
100ms
10ms
1ms
100µs
0.1
1
10
100
V
DS
- Drain-Source Voltage (V)
T - Temperature (°)
Safe Operating Area
Derating Curve
Refer Note (b)
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
120
100
80
60
40
20
D=0.2
D=0.1
D=0.05
160
140
120
100
80
60
40
20
D=0.2
D=0.1
D=0.05
D=0.5
Refer Note (a)
D=0.5
0
0.0001
Single Pulse
0.001
0.01
0.1
1
10
100
0
0.0001 0.001 0.01
Single Pulse
0.1
1
10
100
1000
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
ISSUE 1 - JUNE 2004
3
ZXMD63P02X
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
V
SD
t
rr
Q
rr
21.7
9.6
-0.95
V
ns
nC
T
j
=25°C, I
S
=-1.2A,
V
GS
=0V
T
j
=25°C, I
F
=-1.2A,
di/dt= 100A/µs
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
3.4
9.6
16.4
20.4
5.25
1.0
2.25
ns
ns
ns
ns
nC
nC
nC
V
DS
=-16V,V
GS
=-4.5V,
I
D
=-1.2A
(Refer to test
circuit)
V
DD
=-10V, I
D
=-1.2A
R
G
=6.0Ω, R
D
=8.3Ω
(Refer to test
circuit)
C
iss
C
oss
C
rss
290
120
50
pF
pF
pF
V
DS
=-15 V, V
GS
=0V,
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
1.3
-0.7
0.27
0.40
-20
-1
±100
V
µA
nA
V
Ω
Ω
S
I
D
=-250µA, V
GS
=0V
V
DS
=-20V, V
GS
=0V
V
GS
=± 12V, V
DS
=0V
I
D
=-250µA, V
DS
=
V
GS
V
GS
=-4.5V, I
D
=-1.2A
V
GS
=-2.7V, I
D
=-0.6A
V
DS
=-10V,I
D
=-0.6A
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JUNE 2004
4
ZXMD63P02X
TYPICAL CHARACTERISTICS
10
+25 C
5V
4.5V
4V
3.5V
3V
2.5V
-VGS
2V
10
+150°C
-I
D
- Drain Current (A)
-I
D
- Drain Current (A)
5V
4.5V
4V
3.5V
3V
2.5V
-VGS
2V
1
1
0.1
0.1
1
10
100
0.1
0.1
1
10
100
-V
DS
- Drain-Source Voltage (V)
-V
DS
- Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
10
VDS=-10V
Normalised R
DS(on)
and V
GS(th)
1.6
1.4
1.2
1.0
VGS=VDS
RDS(on)
VGS=-4.5V
ID=-1.2A
-I
D
- Drain Current (A)
1
T=150 C
T=25 C
0.8
VGS(th)
ID=-250uA
0.6
0.4
-100
0.1
1
1.5
-V
GS
2
2.5
3
3.5
4
4.5
- Gate-Source Voltage (V)
-50
0
T
j
- Junction
50
100
150
200
Temperature (°C)
Typical Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
v Temperature
-I
SD
- Reverse Drain Current (A)
10
R
DS(on)
- Drain-Source On-Resistance (Ω)
10
1
1
VGS=-3V
VGS=-5V
0.1
0.1
T=150°C
T=25°C
0.1
1
10
0.01
0.2
-I
D
- Drain Current (A)
0.4
-V
SD
0.6
0.8
1.0
1.2
1.4
- Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
ISSUE 1 - JUNE 2004
5
嵌入式系统
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