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SFAS802GC0G

产品描述Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, D2PAK-3/2
产品类别分立半导体    二极管   
文件大小439KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
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SFAS802GC0G概述

Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, D2PAK-3/2

SFAS802GC0G规格参数

参数名称属性值
是否Rohs认证符合
包装说明R-PSSO-G2
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
其他特性LOW POWER LOSS
应用EFFICIENCY
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.95 V
JEDEC-95代码TO-263AB
JESD-30 代码R-PSSO-G2
最大非重复峰值正向电流125 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流8 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
最大重复峰值反向电压100 V
最大反向电流10 µA
最大反向恢复时间0.035 µs
表面贴装YES
端子形式GULL WING
端子位置SINGLE
Base Number Matches1

文档预览

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CREAT BY ART
SFAS801G - SFAS808G
8.0AMPS Surface Mount Super Fast Rectifiers
D
2
PAK
Features
UL Recognized File #E-326854
Glass passivated junction chip
High efficiency, low VF
High current capability
High reliability
High surge current capability
Low power loss
For use in low voltage, high frequency inverter,
Free wheeling, and polarity protection application
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: D
2
PAK Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering:
260℃/10 seconds/.16",(4.06mm) from case
Weight: 1.33 grams
Ordering Information
Part No.
SFAS801G
Package
D2PAK
Packing
800 / 13" REEL
Packing code
RN
Packing code
(Green)
RNG
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage
@ 8.0A
Maximum Reverse Current @ Rated VR
T
A
=25
T
A
=100
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θjC
T
J
T
STG
SFAS SFAS SFAS SFAS SFAS SFAS SFAS
801G 802G 803G 804G 805G 806G 807G
50
100
150
200
300
400
500
35
50
70
100
105
150
140
200
8
125
0.95
10
400
35
80
2.2
- 55 to + 150
- 55 to + 150
60
1.3
210
300
280
400
350
500
SFAS
808G
600
420
600
Unit
V
V
V
A
A
1.7
V
uA
nS
pF
O
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
C/W
O
O
C
C
Note 1: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:K13

 
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