CMG05
TOSHIBA Rectifier Silicon Diffused Type
CMG05
○
General-Purpose Rectifier Applications
Unit: mm
•
•
•
Repetitive peak reverse voltage: V
RRM
= 400 V
Forward voltage: V
FM
=1.1 V (max)
②
0.65
±
0.2
3.8
±
0.1
4.7
±
0.2
0.16
0 ~ 0.1
0.98
±
0.1
①
ANODE
②
CATHODE
Average forward current: I
F (AV)
= 1.0 A
Suitable for high-density board assembly due to the use of a small
surface-mount package, M−FLAT
TM
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
Non-repetitive peak surge current
Junction temperature
Storage temperature
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
400
1.0 (Note 1)
15 (50 Hz)
-40 to 150
-40 to 150
Unit
V
A
A
°C
°C
①
1.75
±
0.1
+ 0.2
2.4
−
0.1
Note 1: Ta = 75°C
Device mounted on a ceramic board
board size: 50 mm
×
50 mm
soldering land: 2 mm
×2
mm
board thickness:0.64 mm
Rectangular waveform:α
=
180°
JEDEC
JEITA
TOSHIBA
―
―
3-4E1A
Weight: 0.023 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2008-02-05
0.65
±
0.2
CMG05
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
V
FM(1)
Peak forward voltage
V
FM(2)
V
FM(3)
Peak repetitive reverse current
I
RRM
Test Condition
I
FM
=
0.1A (pulse test)
I
FM
=
0.7A (pulse test)
I
FM
=
1.0A (pulse test)
V
RRM
= 400 V (pulse test)
Device mounted on a ceramic board
(board size: 50 mm
×
50 mm)
(soldering land: 2 mm
×
2 mm)
(board thickness: 0.64 mm)
Device mounted on a glass-epoxy
board
(board size: 50 mm
×
50 mm)
(soldering land: 6 mm
×
6 mm)
(board thickness: 1.6 mm)
Device mounted on a glass-epoxy
board
(board size: 50 mm
×
50 mm)
(soldering land: 2.1 mm
×
1.4 mm)
(board thickness: 1.6 mm)
Thermal resistance
(junction to lead)
R
th (j-ℓ)
―
Min
―
―
―
―
Typ.
0.80
0.91
0.94
―
Max
―
―
1.1
10
μA
V
Unit
―
―
60
Thermal resistance
(junction to ambient)
R
th (j-a)
―
―
135
°C/W
―
―
210
―
―
16
°C/W
2
2008-02-05
CMG05
Marking
Abbreviation Code
G5
Part No.
CMG05
Standard Soldering Pad
Unit: mm
1.4
3.0
1.4
Handling Precaution
The absolute maximum ratings are rated values and must not be exceeded during operation, even for an instant. The
following are the general derating methods that we recommend when you design a circuit with a device.
V
RRM
: We recommend that the worst case voltage, including surge voltage, be no greater than 80% of the maximum
rating of V
RRM
for a DC circuit and be no greater than 50% of that of V
RRM
for an AC circuit.
V
RRM
has a temperature coefficient of 0.1%/℃. Take this temperature coefficient into account designing a device
at low temperature.
I
F(AV)
: We recommend that the worst case current be no greater than 80% of the maximum rating of I
F(AV)
. Carry out
adequate heat design. If you can’t design a circuit with excellent heat radiation, set the margin by using an
allowable Ta max-I
F (AV)
curve.
I
FSM
: This rating specifies the non-repetitive peak current in one cycle of a 50-Hz sine wave, condition angle 180.
Therefore, this is only applied for an abnormal operation, which seldom occurs during the lifespan of the device.
We recommend that a device be used at T
j
below 120℃ under the worst load and heat radiation conditions.
Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When using
a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value.
Please refer to the Rectifiers databook for further information
2.1
3
2008-02-05
CMG05
i
F
– v
F
10
1.2
Pulse test
P
F (AV)
– I
F (AV)
Half-sine waveform
i
F
(A)
Average forward power dissipation
P
F (AV)
(W)
1.0
0°
180°
Tj
=
150°C
1
Instantaneous forward current
0.8
Conduction angle 180°
75°C
25°C
0.6
0.1
0.4
0.2
0.01
0
0.4
0.8
1.2
1.6
2.0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous forward voltage vF
(V)
Average forward current
I
F (AV)
(A)
Tℓ
160
140
max – I
F
(AV)
160
140
Tamax – I
F
(AV)
Device mounted on a ceramic board:
board size: 50 mm
×
50 mm
Soldering land: 2.0 mm
×
2.0 mm
board thickness: 0.64 mm
Maximum allowable lead temperature
T
ℓ
max (°C)
120
100
80
60
40
20
0
0
0°
180°
Maximum allowable temperature
T
a
max (°C)
120
100
80
60
40
20
0
0
0°
180°
Half-sine waveform
Half-sine waveform
Conduction angle 180°
0.2
0.4
0.6
0.8
1.0
1.2
Conduction angle 180°
0.2
0.4
0.6
0.8
1.0
1.2
Average forward current
I
F (AV)
(A)
Average forward current
I
F (AV)
(A)
Tamax – I
F (AV)
160
140
Device mounted on a glass-epoxy board:
board size: 50 mm
×
50 mm
Soldering land: 6.0 mm
×
6.0 mm
board thickness: 1.6 mm
Surge forward current
(non-repetitive)
16
Ta
=
25°C
f
=
50 Hz
12
Maximum allowable temperature
T
a
max (°C)
120
100
80
60
Device mounted on a glass-epoxy board:
board size: 50 mm
×
50 mm
Soldering land: 2.1 mm
×
1.4 mm
board thickness: 1.6 mm
Half-sine waveform
Peak surge forward current
I
FSM
(A)
1.2
8
0°
180
°
40
20
0
0
Conduction angle 180°
4
0.2
0.4
0.6
0.8
1.0
0
1
3
5
10
30
50
100
Average forward current
I
F (AV)
(A)
Number of cycles
4
2008-02-05
CMG05
r
th (j-a)
– t
1000
Device mounted on a glass-epoxy board:
board size: 50 mm
×
50 mm
Soldering land: 2.1 mm
×
1.4 mm
board thickness: 1.6 mm
Transient thermal impedance
rth (j-a) (°C/W)
100
10
Device mounted on a ceramic
board:
board size: 50 mm
×
50 mm
Soldering land: 2.0 mm
×
2.0 mm
board thickness: 0.64 mm
Device mounted on a
glass-epoxy board:
board size: 50 mm
×
50 mm
Soldering land: 6.0 mm
×
6.0 mm
board thickness: 1.6 mm
1
0.001
0.01
0.1
1
10
100
1000
Time t (s)
5
2008-02-05
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