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CPT400150D

产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 200A, 150V V(RRM), Silicon, PACKAGE-2
产品类别分立半导体    二极管   
文件大小117KB,共2页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 选型对比 全文预览

CPT400150D概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 200A, 150V V(RRM), Silicon, PACKAGE-2

CPT400150D规格参数

参数名称属性值
是否Rohs认证不符合
包装说明PACKAGE-2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
其他特性REVERSE ENERGY TESTED
应用POWER
外壳连接ANODE AND CATHODE
配置SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.6 V
JESD-30 代码R-XUFM-X2
最大非重复峰值正向电流3000 A
元件数量2
相数1
端子数量2
最高工作温度175 °C
最低工作温度-55 °C
最大输出电流200 A
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压150 V
表面贴装NO
技术SCHOTTKY
端子形式UNSPECIFIED
端子位置UPPER
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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CPT400120-CPT400150
A
R
G
Baseplate
A=Common Anode
B
Q
N
W
Baseplate
Common Cathode
U
C
H
V
E
Baseplate
D=Doubler
Notes:
Baseplate: Nickel plated
copper
Schottky PowerMod
Dim. Inches
Min.
A
B
C
E
F
G
H
N
Q
R
U
V
W
Millimeters
Min.
Max.
Notes
Max.
F
U
---
3.630
0.800
0.700
0.630
---
0.130
0.120
0.510
0.490
1.375 BSC
---
0.010
---
---
0.290
0.275
3.150 BSC
0.600
---
0.312
0.340
0.180
0.195
---
92.20
17.78
20.32
---
16.00
3.30
3.05
12.45
12.95
34.92 BSC
---
0.25
---
---
6.99
7.37
80.01 BSC
15.24
---
7.92
8.64
4.57
4.95
1/4-20
Dia.
Dia.
Microsemi
Catalog Number
CPT400120*
CPT400150*
Industry
Part Number
409CNQ120
409CNQ150
Repetitive Peak
Working Peak
Reverse Voltage Reverse Voltage
120V
150V
120V
150V
Schottky Barrier Rectifier
Guard Ring Protection
400 Amperes/120-150 Volts
175°C Junction Temperature
Reverse Energy Tested
*Add Suffix A for Common Anode, D for Doubler
ROHS Compliant
Electrical Characteristics
I F(AV) 400 Amps
Average forward current per pkg
I F(AV) 200 Amps
Average forward current per leg
I FSM 3000 Amps
Maximum surge current per leg
Maximum repetitive reverse current per leg I R(OV) 2 Amps
VFM
.89 Volts
Max peak forward voltage per leg
VFM
.69 Volts
Max peak forward voltage per leg
I RM
50 mA
Max peak reverse current per leg
I RM
6.0 mA
Max peak reverse current per leg
CJ
3400 pF
Typical junction capacitance per leg
T C = 121°C, Square wave, R0JC = 0.16°C/W
T C = 121°C, Square wave, R0JC = 0.32°C/W
8.3ms, half sine, T = 175°C
J
f = 1 KHZ, 25°C, 1µsec square wave
I FM = 200A: J = 25°C*
T
I FM = 200A: J = 175°C*
T
VRRM, TJ = 125°C*
VRRM, TJ = 25°C
VR = 5.0V,T C = 25°C
*Pulse test: Pulse width 300µsec, Duty cycle 2%
Thermal and Mechanical Characteristics
Storage temp range
Operating junction temp range
Max thermal resistance per leg
Max thermal resistance per pkg
Typical thermal resistance (greased)
Terminal Torque
Mounting Base Torque (outside holes)
Mounting Base Torque (center hole)
center hole must be torqued first
Weight
T STG
TJ
R OJC
R OJC
R OCS
-55°C to 175°C
-55°C to 175°C
0.32°C/W Junction to case
0.16°C/W Junction to case
0.08°C/W Case to sink
35-50 inch pounds
30-40 inch pounds
8-10 inch pounds
2.8 ounces (77 grams) typical
www.microsemi.com
January, 2010 - Rev. 1

CPT400150D相似产品对比

CPT400150D 409CNQ150 409CNQ120 CPT400120A CPT400120D
描述 Rectifier Diode, Schottky, 1 Phase, 2 Element, 200A, 150V V(RRM), Silicon, PACKAGE-2 Rectifier Diode, Schottky, 1 Phase, 2 Element, 200A, 120V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2 Rectifier Diode, Schottky, 1 Phase, 2 Element, 200A, 150V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2 Rectifier Diode, Schottky, 1 Phase, 2 Element, 200A, 120V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2 Rectifier Diode, Schottky, 1 Phase, 2 Element, 200A, 120V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
包装说明 PACKAGE-2 ROHS COMPLIANT PACKAGE-2 ROHS COMPLIANT PACKAGE-2 R-XUFM-X2 ROHS COMPLIANT PACKAGE-2
针数 2 2 2 2 2
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
应用 POWER POWER POWER POWER POWER
外壳连接 ANODE AND CATHODE CATHODE CATHODE ANODE ANODE AND CATHODE
配置 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 R-XUFM-X2 R-XUFM-X2 R-XUFM-X2 R-XUFM-X2 R-XUFM-X2
最大非重复峰值正向电流 3000 A 3000 A 3000 A 3000 A 3000 A
元件数量 2 2 2 2 2
相数 1 1 1 1 1
端子数量 2 2 2 2 2
最高工作温度 175 °C 175 °C 175 °C 175 °C 175 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 200 A 200 A 200 A 200 A 200 A
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 150 V 120 V 150 V 120 V 120 V
表面贴装 NO NO NO NO NO
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子形式 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
端子位置 UPPER UPPER UPPER UPPER UPPER
Base Number Matches 1 1 1 - -
厂商名称 - - Microsemi Microsemi Microsemi

 
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