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FR157: 产品描述Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-15,; 产品类别分立半导体二极管; 文件大小88KB，共2页; 制造商Galaxy Semi-Conductor Co Ltd; 标准

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FR157概述

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-15,

FR157规格参数

参数名称	属性值
是否Rohs认证	符合
包装说明	O-PALF-W2
Reach Compliance Code	unknown
Is Samacsys	N
应用	FAST RECOVERY
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	1.3 V
JEDEC-95代码	DO-15
JESD-30 代码	O-PALF-W2
最大非重复峰值正向电流	60 A
元件数量	1
相数	1
端子数量	2
最高工作温度	150 °C
最低工作温度	-55 °C
最大输出电流	1.5 A
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	LONG FORM
最大重复峰值反向电压	1000 V
最大反向电流	5 µA
最大反向恢复时间	0.5 µs
表面贴装	NO
端子形式	WIRE
端子位置	AXIAL
Base Number Matches	1

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FEATURES

GALAXY ELECTRICAL

FR151---FR157

VOLTAGE RANGE: 50 --- 1000 V

CURRENT: 1.5 A

FAST RECOVERY RECTIFIER

Low cost

Diffused junction

Low leakage

Low forward voltage drop

High current capability

Easily cleaned with Freon,Alcohol,Isopropanol

and similar solvents

The plastic material carries U/L recognition 94V-0

DO - 15

MECHANICAL DATA

Case:JEDEC DO-15,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.014 ounces,0.39 grams

Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

151

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forw ard rectified current

9.5mm lead length,

=75

152

100

153

200

140

200

154

400

280

400

1.5

155

600

420

600

156

800

560

800

157

1000

700

1000

UNITS

RRM

RMS

F(AV)

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

=125

FSM

60.0

Maximum instantaneous forw ard voltage

@ 1.5 A

Maximum reverse current

at rated DC blocking voltage

=25

=100

STG

150

1.3

5.0

100.0

250

- 55---- +150

- 55---- + 150

500

／Ｗ

Maximum reverse recovery time (Note1)

Typical junction capacitance

Typical thermal resistance

(Note2)

(Note3)

Operating junction temperature range

Storage temperature range

NOTE:1. Measured with I

=0.5A, I

=1A, I

=0.25A.

www.galaxycn.com

2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.

3. Thermal resistance f rom junction to ambient.

Document Number 0261003

GALAXY ELECTRICAL

FR157相似产品对比

	FR157	FR155	FR156
描述	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-15,	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-15,	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-15,
是否Rohs认证	符合	符合	符合
包装说明	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknown	unknown	unknown
应用	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
外壳连接	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	1.3 V	1.3 V	1.3 V
JEDEC-95代码	DO-15	DO-15	DO-15
JESD-30 代码	O-PALF-W2	O-PALF-W2	O-PALF-W2
最大非重复峰值正向电流	60 A	60 A	60 A
元件数量	1	1	1
相数	1	1	1
端子数量	2	2	2
最高工作温度	150 °C	150 °C	150 °C
最低工作温度	-55 °C	-55 °C	-55 °C
最大输出电流	1.5 A	1.5 A	1.5 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM
最大重复峰值反向电压	1000 V	600 V	800 V
最大反向电流	5 µA	5 µA	5 µA
最大反向恢复时间	0.5 µs	0.25 µs	0.5 µs
表面贴装	NO	NO	NO
端子形式	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL
Is Samacsys	N	N	-
Base Number Matches	1	1	-
厂商名称	-	Galaxy Semi-Conductor Co Ltd	Galaxy Semi-Conductor Co Ltd

FR157

FR157概述

FR157规格参数

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FR157相似产品对比

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