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HDBL103GC1G

产品描述Bridge Rectifier Diode,
产品类别分立半导体    二极管   
文件大小375KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

HDBL103GC1G概述

Bridge Rectifier Diode,

HDBL103GC1G规格参数

参数名称属性值
是否Rohs认证符合
包装说明R-PDIP-T4
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
其他特性UL RECOGNIZED
最小击穿电压200 V
配置BRIDGE, 4 ELEMENTS
二极管元件材料SILICON
二极管类型BRIDGE RECTIFIER DIODE
JESD-30 代码R-PDIP-T4
JESD-609代码e3
最大非重复峰值正向电流50 A
元件数量4
相数1
端子数量4
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
峰值回流温度(摄氏度)NOT SPECIFIED
最大重复峰值反向电压200 V
表面贴装NO
端子面层Matte Tin (Sn)
端子形式THROUGH-HOLE
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

下载PDF文档
HDBL101G thru HDBL107G
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- UL Recognized File # E-326854
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated High Efficient Bridge Rectifiers
DBL
MECHANICAL DATA
Case:
Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
Polarity as marked on the body
Weight:
0.36 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 1 A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
Notes 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
T
J
=25
T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
Trr
R
θjL
R
θjA
T
J
T
STG
50
15
40
- 55 to + 150
- 55 to + 150
1.0
HDBL
101G
50
35
50
HDBL
102G
100
70
100
HDBL
103G
200
140
200
HDBL
104G
400
280
400
1
50
10.3
1.3
5
500
75
O
HDBL
105G
600
420
600
HDBL
106G
800
560
800
HDBL
107G
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
1.7
V
μA
ns
C/W
O
O
C
C
Document Number: DS_D1311010
Version: E13

 
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