RN4988FE
TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type
(PCT process) (Bias Resistor built-in Transistor)
RN4988FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
•
•
Two devices are incorporated into an Extreme-Super-Mini (6 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
Equivalent Circuit and Bias Resistor Values
Q1
C
Q2
C
R1
B
R2
B
R1
R2
E
E
R1: 22 kΩ
R2: 47 kΩ
(Q1, Q2 common)
Marking
Equivalent Circuit
(top view)
6
5
4
6I
Q1
Q2
1
2
3
000707EAA1
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
•
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
•
The information contained herein is subject to change without notice.
2000-12-27
1/3
RN4988FE
Electrical Characteristics
(Ta
=
25°C) (Q1)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
Test Condition
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
7 V, I
C
=
0
V
CE
=
5 V, I
C
=
10 mA
I
C
=
5 mA, I
B
=
0.25 mA
V
CE
=
0.2 V, I
C
=
5 mA
V
CE
=
5 V, I
C
=
0.1 mA
V
CE
=
10 V, I
C
=
5 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
0.078
80
1.0
0.6
Typ.
0.1
250
3
Max
100
500
0.145
0.3
2.6
1.16
6
V
V
V
MHz
pF
mA
Unit
nA
Electrical Characteristics
(Ta
=
25°C) (Q2)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
Test Condition
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −7
V, I
C
=
0
V
CE
= −5
V, I
C
= −10
mA
I
C
= −5
mA, I
B
= −0.25
mA
V
CE
= −0.2
V, I
C
= −5
mA
V
CE
= −5
V, I
C
= −0.1
mA
V
CE
= −10
V, I
C
= −5
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
−0.078
80
−1.0
−0.6
Typ.
−0.1
200
3
Max
−100
−500
−0.145
−0.3
−2.6
−1.16
6
V
V
V
MHz
pF
Unit
nA
mA
Electrical Characteristics
(Ta
=
25°C) (Q1, Q2 common)
Characteristics
Input resistor
Resistor ratio
Symbol
R1
R1/R2
Test Condition
Min
15.4
0.421
Typ.
22
0.468
Max
28.6
0.515
Unit
kΩ
2000-12-27
3/3
FPGA/CPLD
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