Preliminary
Datasheet
RJK0629DPN
60V, 85A, 4.5m max.
N Channel Power MOS FET
High-Speed Switching Use
Features
V
DSS
: 60 V
R
DS(on)
: 4.5 m (Max)
I
D
: 85 A
R07DS1062EJ0200
(Previous: REJ03G1873-0100)
Rev.2.00
Apr 09, 2013
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
4
2, 4
D
1G
1
1. Gate
2. Drain
3. Source
4. Drain
2
3
S
3
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Tc = 25C, Tch
150C, L = 100
H
3. Value at Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D
(pulse)
Note
1
I
DR
I
DR
(pulse)
Note
1
I
AP
Note
2
Pch
Note
ch-c
Tch
Tstg
3
Value
60
20
85
340
85
340
55
100
1.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
C/W
C
C
R07DS1062EJ0200 Rev.2.00
Apr 09, 2013
Page 1 of 6
RJK0629DPN
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note:
4. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
DSS
I
GSS
V
GS(off)
V
DS(on)
R
DS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
60
20
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
161
3.75
4.9
4100
1000
780
85
11
25
20
40
100
40
0.92
50
Max
—
—
1
10
2.0
194
4.5
6.6
—
—
—
—
—
—
—
—
—
—
1.2
—
Unit
V
V
A
A
V
mV
m
m
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 100
A,
V
GS
= 0
I
G
=
100 A,
V
DS
= 0
V
DS
= 60 V, V
GS
= 0
V
GS
=
20
V, V
DS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 43A, V
GS
= 10 V
Note
4
I
D
= 43A, V
GS
= 10 V
Note
4
I
D
= 43 A, V
GS
= 4.5 V
Note
4
V
DS
= 10 V, V
GS
= 0
f = 1 MHz
V
DD
= 25 V, V
GS
= 10 V,
I
D
= 85 A
V
DD
= 30V, I
D
= 43A,
V
GS
= 10 V, R
G
= 4.7
I
F
= 85 A, V
GS
= 0
Note
4
I
F
= 85 A, V
GS
= 0,
di
F
/dt = 100 A/s
R07DS1062EJ0200 Rev.2.00
Apr 09, 2013
Page 2 of 6
RJK0629DPN
Preliminary
Main Characteristics
Power vs. Temperature Derating
200
1000
10
μ
s
Maximum Safe Operation Area
Pch (W)
I
D
(A)
150
100
1
10
0
μ
s
s
m
Channel Dissipation
10
Operation in
1
this area is
limited by R
DS(on)
PW
100
Drain Current
=
10
s
m
DC
Op
er
at
ion
50
0.1
0.01
0.1
Tc = 25°C
1 shot Pulse
0
50
100
150
200
1
10
100
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
100
10 V
5V
100
3V
Typical Transfer Characteristics
Tc = 175°C
Drain Current I
D
(A)
Drain Current I
D
(A)
80
10
25°C
−40°C
60
V
GS
= 2.7 V
1
40
0.1
20
Tc = 25°C
Pulse Test
0
5
10
0.01
0.001
0
V
DS
= 10 V
Pulse Test
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Static Drain to Source on State Resistance
vs. Gate to Source Voltage
Drain to Source on State Resistance
R
DS (on)
(mΩ)
20
I
D
= 43 A
Pulse Test
15
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS (on)
(mΩ)
100
Tc = 25°C
Pulse Test
10
Tc = 175°C
10
V
GS
= 4.5 V
10 V
5
25°C
−40°C
0
0
4
8
12
16
20
1
1
10
100
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
R07DS1062EJ0200 Rev.2.00
Apr 09, 2013
Page 3 of 6
RJK0629DPN
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
I
D
= 43 A
10000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Static Drain to Source on State Resistance
R
DS(on)
(mΩ)
Capacitance C (pF)
16
Ciss
3000
12
V
GS
= 4.5 V
8
1000
Coss
Crss
Tc = 25°C
V
GS
= 0
f = 1 MHz
0
5
10
15
20
25
30
4
10 V
300
0
−50
100
0
50
100
150
200
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
50
V
GS
16
Reverse Drain Current vs.
Source to Drain Voltage
20
100
Reverse Drain Current I
DR
(A)
Tc = 25°C
I
D
= 85 A
V
DD
= 25 V
10 V
5V
V
DS
10 V
80
Tc = 25°C
Pulse Test
40
30
12
60
20
V
DD
= 25 V
10 V
5V
40
80
120
160
8
40
V
GS
= 0,
−5
V
10
4
0
200
20
0
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Maximum Avalanche Energy vs.
Channel Temperature Derating
500
Source to Drain Voltage V
SD
(V)
Avalanche Energy E
AS
(mJ)
400
I
AP
= 55 A
V
DD
= 25 V
duty < 0.1 %
Rg
≥
50
Ω
300
200
100
0
25
50
75
100
125
150
175
Channel Temperature Tch (°C)
R07DS1062EJ0200 Rev.2.00
Apr 09, 2013
Page 4 of 6
RJK0629DPN
Normalized Transient Thermal Impedance
γ
s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Preliminary
1
D=1
0.5
0.2
0.1
0.1
0.05
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 1.25°C/W, Tc = 25°C
0.01
u
tp
lse
P
DM
PW
T
D=
0.02
1s
ho
PW
T
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
V
DS
Monitor
L
I
AP
Monitor
E
AS
=
Avalanche Waveform
1
2
L
•
I
AP
•
2
V
DSS
V
DSS
– V
DD
V
(BR)DSS
Rg
D. U. T
V
DD
I
AP
V
DS
Vin
15 V
50
Ω
I
D
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 30 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS1062EJ0200 Rev.2.00
Apr 09, 2013
Page 5 of 6
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
