Datasheet> 器件分类 > 分立半导体> 晶体管> RN2107FV

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RN2107FV: 产品描述TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal; 产品类别分立半导体晶体管; 文件大小339KB，共6页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN2107FV概述

TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal

RN2107FV规格参数

参数名称	属性值
包装说明	CYLINDRICAL, O-PBCY-T3
针数	3
Reach Compliance Code	unknown
ECCN代码	EAR99
Is Samacsys	N
其他特性	BUILT-IN BIAS RESISTANCE RATIO IS 4.7
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	80
JESD-30 代码	O-PBCY-T3
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	CYLINDRICAL
极性/信道类型	PNP
最大功率耗散 (Abs)	0.15 W
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	BOTTOM
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	200 MHz
Base Number Matches	1

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RN2107FV∼RN2109FV

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2107FV, RN2108FV, RN2109FV

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

0.22±0.05

Unit in mm

1.2±0.05

0.8±0.05

0.32±0.05

0.13±0.05

1.BASE

2.EMITTER

3.COLLECTOR

Built-in bias resistors

Simplified circuit design

1.2±0.05

0.8±0.05

Complementary to RN1107FV~RN1109FV

0.4

Reduced quantity of parts and manufacturing process

Equivalent Circuit and Bias Resister Values

0.5±0.05

Type No.

RN2107FV

RN2108FV

RN2109FV

R1 (kΩ)

R2 (kΩ)

VESM

JEDEC

JEITA

TOSHIBA

―

2-1L1A

Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

RN2107FV

~RN2109FV

RN2107FV

Emitter-base voltage

RN2108FV

RN2109FV

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2107FV

~RN2109FV

(Note)

stg

EBO

Symbol

CBO

CEO

Rating

−50

−6

−7

−15

−100

150

−55~150

°C

Unit

Weight: 0.0015g (typ.)

Note: Mounted on FR4 board (25.4 mm

25.4 mm

1.6mmt)

0.5mm

0.45mm

0.4mm

2004-06-28

RN2107FV相似产品对比

	RN2107FV	RN2108FV	RN2109FV
描述	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal
包装说明	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
针数	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99
其他特性	BUILT-IN BIAS RESISTANCE RATIO IS 4.7	BUILT-IN BIAS RESISTANCE RATIO IS 2.13	BUILT-IN BIAS RESISTANCE RATIO IS 0.47
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	80	80	70
JESD-30 代码	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
元件数量	1	1	1
端子数量	3	3	3
最高工作温度	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND
封装形式	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
极性/信道类型	PNP	PNP	PNP
最大功率耗散 (Abs)	0.15 W	0.15 W	0.15 W
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	BOTTOM	BOTTOM	BOTTOM
晶体管应用	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON
标称过渡频率 (fT)	200 MHz	200 MHz	200 MHz
Base Number Matches	1	1	-

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