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NTK4401NT1G

产品描述20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 631AA-01, 3 PIN
产品类别分立半导体    晶体管   
文件大小35KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
下载文档 详细参数 选型对比 全文预览

NTK4401NT1G概述

20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 631AA-01, 3 PIN

NTK4401NT1G规格参数

参数名称属性值
是否Rohs认证符合
包装说明CASE 631AA-01, 3 PIN
针数3
制造商包装代码CASE 631AA-01
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
配置SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压20 V
最大漏源导通电阻3.5 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-PDSO-F3
元件数量1
端子数量3
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型N-CHANNEL
认证状态Not Qualified
表面贴装YES
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

文档预览

下载PDF文档
NTK4401N
Product Preview
Small Signal MOSFET
20 V, Single N−Channel, SOT−723
Gate ESD Protection
Features
http://onsemi.com
V
(BR)DSS
20 V
2.5
W
@ 2.5 V
R
DS(on)
TYP
1.5
W
@ 4.5 V
TBD
I
D
Max
Low Gate Charge for Fast Switching
Small Footprint (1.2 x 1.2 mm)
ESD Protected Gate
Pb−Free Package for Green Manufacturing (G Suffix)
Applications
DC−DC Conversion
Level Shift
Power Management Load Switch
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Steady
State
Steady
State
T
A
= 25
°C
T
A
= 25
°C
tp = 10
µs
Symbol
V
DSS
V
GS
I
D
P
D
I
DM
T
J
, T
STG
I
S
T
L
Value
20
±10
TBD
300
714
−55 to
150
238
260
Units
V
V
mA
SOT−723 (3−LEAD)
G
1
3
D
S
2
Top View
mW
mA
MARKING DIAGRAM
3
1
2
TBD M
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
°
C
A
°C
CASE 631AA
SOT−723
TBD
M
= Specific Device Code
= Date Code
THERMAL RESISTANCE RATINGS
(Note 1)
Parameter
Junction−to−Ambient – Steady State
Symbol
R
θJA
Max
TBD
Units
°C/W
ORDERING INFORMATION
Device
NTK4401NT1
NTK4401NT1G
Package
SOT−723
SOT−723
(Pb−Free)
Shipping
8000 Units/Reel
8000 Units/Reel
1. Surface−mounted on FR4 board using 1″ sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
This document contains information on a product under development.
ON Semiconductor reserves the right to change or discontinue this
product without notice.
This document, and the information contained herein, is CONFIDENTIAL AND
PROPRIETARY and the property of Semiconductor Components Industries,
LLC., dba ON Semiconductor. It shall not be used, published, disclosed or
disseminated outside of the Company, in whole or in part, without the written
permission of ON Semiconductor. Reverse engineering of any or all of the
information contained herein is strictly prohibited.
E
2003, SCILLC. All Rights Reserved.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2003
1
November, 2003 − Rev. P0
Publication Order Number:
NTK4401N/D

NTK4401NT1G相似产品对比

NTK4401NT1G NTK4401NT1
描述 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 631AA-01, 3 PIN 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 631AA-01, 3 PIN
是否Rohs认证 符合 不符合
包装说明 CASE 631AA-01, 3 PIN CASE 631AA-01, 3 PIN
针数 3 3
制造商包装代码 CASE 631AA-01 CASE 631AA-01
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
配置 SINGLE WITH BUILT-IN DIODE AND RESISTOR SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压 20 V 20 V
最大漏源导通电阻 3.5 Ω 3.5 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PDSO-F3 R-PDSO-F3
元件数量 1 1
端子数量 3 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED 225
极性/信道类型 N-CHANNEL N-CHANNEL
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
端子形式 FLAT FLAT
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON

 
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