L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN
| 参数名称 | 属性值 |
| 包装说明 | SMALL OUTLINE, R-PDSO-F6 |
| 针数 | 6 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| Is Samacsys | N |
| 其他特性 | LOW NOISE |
| 最大集电极电流 (IC) | 0.1 A |
| 基于收集器的最大容量 | 0.5 pF |
| 集电极-发射极最大电压 | 5 V |
| 配置 | SINGLE |
| 最高频带 | L BAND |
| JESD-30 代码 | R-PDSO-F6 |
| 元件数量 | 1 |
| 端子数量 | 6 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | FLAT |
| 端子位置 | DUAL |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON GERMANIUM |
| 标称过渡频率 (fT) | 17000 MHz |
| Base Number Matches | 1 |
| NESG2101M16-A-YFB | NESG2101M16-T3-A | NESG2101M16-T3-A-YFB | NESG2101M16-T3-A-FB | NESG2101M16-A | NESG2101M16-A-FB | |
|---|---|---|---|---|---|---|
| 描述 | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN | RF SMALL SIGNAL TRANSISTOR | RF SMALL SIGNAL TRANSISTOR | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN |
| 包装说明 | SMALL OUTLINE, R-PDSO-F6 | LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN | , | , | LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN | SMALL OUTLINE, R-PDSO-F6 |
| Reach Compliance Code | unknown | compliant | unknown | unknown | compliant | unknown |
| 针数 | 6 | 6 | - | - | 6 | 6 |
| ECCN代码 | EAR99 | EAR99 | - | - | EAR99 | EAR99 |
| 其他特性 | LOW NOISE | LOW NOISE | - | - | LOW NOISE | LOW NOISE |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | - | - | 0.1 A | 0.1 A |
| 基于收集器的最大容量 | 0.5 pF | 0.5 pF | - | - | 0.5 pF | 0.5 pF |
| 集电极-发射极最大电压 | 5 V | 5 V | - | - | 5 V | 5 V |
| 配置 | SINGLE | SINGLE | - | - | SINGLE | SINGLE |
| 最高频带 | L BAND | L BAND | - | - | L BAND | L BAND |
| JESD-30 代码 | R-PDSO-F6 | R-PDSO-F6 | - | - | R-PDSO-F6 | R-PDSO-F6 |
| 元件数量 | 1 | 1 | - | - | 1 | 1 |
| 端子数量 | 6 | 6 | - | - | 6 | 6 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | - | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | - | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | - | - | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | NPN | NPN | - | - | NPN | NPN |
| 认证状态 | Not Qualified | Not Qualified | - | - | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | - | - | YES | YES |
| 端子形式 | FLAT | FLAT | - | - | FLAT | FLAT |
| 端子位置 | DUAL | DUAL | - | - | DUAL | DUAL |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | - | - | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON GERMANIUM | SILICON GERMANIUM | - | - | SILICON GERMANIUM | SILICON GERMANIUM |
| 标称过渡频率 (fT) | 17000 MHz | 17000 MHz | - | - | 17000 MHz | 17000 MHz |
| 厂商名称 | - | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
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