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NTLUD3A260PZ
Power MOSFET
Features
−20
V,
−2.1
A,
mCoolt
Dual P−Channel,
ESD, 1.6x1.6x0.55 mm UDFN Package
•
UDFN Package with Exposed Drain Pads for Excellent Thermal
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MOSFET
V
(BR)DSS
R
DS(on)
MAX
200 mW @
−4.5
V
−20
V
290 mW @
−2.5
V
390 mW @
−1.8
V
650 mW @
−1.5
V
−2.1
A
I
D
MAX
Conduction
•
Low Profile UDFN 1.6x1.6x0.55 mm for Board Space Saving
•
ESD Protected
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•
High Side Load Switch
•
PA Switch
•
Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
≤
5s
Power Dissipa-
tion (Note 1)
Steady
State
t
≤
5s
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
tp = 10
ms
P
D
I
DM
T
J
,
T
STG
I
S
T
L
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
−20
±8.0
−1.7
−1.2
−2.1
0.8
1.3
−1.3
−0.9
0.5
−8.0
-55 to
150
−0.6
260
W
A
°C
A
°C
A
W
1
6
Units
V
V
A
D1
D2
G1
G2
S1
P−Channel MOSFET
S2
MARKING
DIAGRAM
UDFN6
CASE 517AT
mCOOLt
1
AD MG
G
AD = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Power Dissipation (Note 2)
Pulsed Drain Current
Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm
2
, 2 oz. Cu.
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2010
September, 2010
−
Rev. 1
1
Publication Order Number:
NTLUD3A260PZ/D
NTLUD3A260PZ
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t
≤
5 s (Note 3)
Junction-to-Ambient – Steady State min Pad (Note 4)
Symbol
R
θJA
R
θJA
R
θJA
Max
155
100
245
Units
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
Drain-to-Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
=
−4.5
V, I
D
=
−2.0
A
V
GS
=
−2.5
V, I
D
=
−1.2
A
V
GS
=
−1.8
V, I
D
=
−0.24
A
V
GS
=
−1.5
V, I
D
=
−0.18
A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
t
d(ON)
t
r
t
d(OFF)
t
f
VSD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dis/dt = 100 A/ms,
I
S
=
−1.0
A
T
J
= 25°C
T
J
= 125°C
V
GS
=
−4.5
V, V
DD
=
−10
V,
I
D
=
−1.5
A, R
G
= 1
W
V
GS
=
−4.5
V, V
DS
=
−10
V;
I
D
=
−1.7
A
V
DS
=
−10
V, I
D
=
−1.5
A
CHARGES, CAPACITANCES & GATE RESISTANCE
300
V
GS
= 0 V, f = 1 MHz,
V
DS
=
−10
V
34
29
4.2
0.3
0.7
1.1
ns
nC
pF
V
GS
= V
DS
, I
D
=
−250
mA
−0.4
2.8
160
226
300
390
3.7
200
290
390
650
S
−1.0
V
mV/°C
mW
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V, I
D
=
−250
mA
I
D
=
−250
mA,
ref to 25°C
V
GS
= 0 V,
V
DS
=
−20
V
T
J
= 25°C
T
J
= 125°C
−20
−10
−1.0
−10
±10
mA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Units
V
DS
= 0 V, V
GS
=
±8.0
V
SWITCHING CHARACTERISTICS, VGS = 4.5 V
(Note 6)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
3.
4.
5.
6.
V
GS
= 0 V,
I
S
=
−0.6
A
0.8
0.68
10.6
8.7
1.9
5.1
nC
ns
1.2
V
17.4
32.3
149
74
Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm
2
, 2 oz. Cu.
Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
Switching characteristics are independent of operating junction temperatures.
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2
NTLUD3A260PZ
TYPICAL CHARACTERISTICS
10
9
−I
D
, DRAIN CURRENT (A)
8
7
6
5
4
3
2
1
0
0
1
2
3
−2.0
V
−1.8
V
−1.5
V
4
T
J
= 25°C V
GS
=
−4.5
V
−4.0
V
5
−3.5
V
−3.0
V
−2.5
V
−I
D
, DRAIN CURRENT (A)
4
3
2
1
0
V
DS
≤
−10
V
T
J
= 25°C
T
J
= 125°C
T
J
=
−55°C
0
0.5
1.0
1.5
2.0
2.5
3.0
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
T
J
= 25°C
I
D
=
−2.0
A
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.500
Figure 2. Transfer Characteristics
T
J
= 25°C
0.400
−1.8
V
0.300
−2.5
V
0.200
V
GS
=
−4.5
V
0.100
1
2
3
4
5
6
7
8
9
10
−V
GS
, GATE VOLTAGE (V)
−I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.6
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50
−25
0
25
50
75
100
125
150
100
2
V
GS
=
−4.5
V
I
D
=
−2.0
A
−I
DSS
, LEAKAGE (nA)
10,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 125°C
1000
T
J
= 85°C
4
6
8
10
12
14
16
18
20
T
J
, JUNCTION TEMPERATURE (°C)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTLUD3A260PZ
TYPICAL CHARACTERISTICS
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
500
400
C
iss
300
200
100
0
C
rss
0
2
4
6
8
10
12
14
16
18
20
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
5
4
V
DS
3
Q
GS
2
1
0
Q
GD
6
4
V
DS
=
−10
V
I
D
=
−1.7
A
T
J
= 25°C
0
1
2
3
4
2
0
V
GS
Q
T
12
10
8
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
C
oss
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
100
−I
S
, SOURCE CURRENT (A)
V
GS
=
−4.5
V
V
DD
=
−10
V
I
D
=
−1.5
A
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
t
d(off)
t
f
t
r
t, TIME (ns)
100
T
J
= 125°C
10
10
t
d(on)
T
J
= 25°C
T
J
=
−55°C
0.4
0.6
0.8
1.0
1.2
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
1
1
10
R
G
, GATE RESISTANCE (W)
100
1
0.2
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0.85
0.75
0.65
0.55
0.45
0.35
0.25
0.15
−50
−25
0
25
50
75
100
125
150
POWER (W)
−V
GS(th)
(V)
200
I
D
=
−250
mA
175
150
125
100
75
50
25
0
Figure 10. Diode Forward Voltage vs. Current
1.E−05
1.E−03
1.E−01
1.E+01
1.E+03
T
J
, JUNCTION TEMPERATURE (°C)
SINGLE PULSE TIME (s)
Figure 11. Threshold Voltage
Figure 12. Single Pulse Maximum Power
Dissipation
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