6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 零件包装代码 | TO-257AA |
| 针数 | 3 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| Is Samacsys | N |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V |
| 最大漏极电流 (Abs) (ID) | 6 A |
| 最大漏极电流 (ID) | 6 A |
| 最大漏源导通电阻 | 0.66 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-257AA |
| JESD-30 代码 | R-MSFM-P3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | METAL |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | P-CHANNEL |
| 最大功率耗散 (Abs) | 50 W |
| 最大脉冲漏极电流 (IDM) | 18 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | PIN/PEG |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| FSS9130D1 | FSS9130D3 | FSS9130R1 | FSS9130R3 | FSS9130R4 | |
|---|---|---|---|---|---|
| 描述 | 6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA | 6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA | 6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN | 6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN | 6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | TO-257AA | TO-257AA | TO-257AA | TO-257AA | TO-257AA |
| 针数 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V | 100 V | 100 V | 100 V | 100 V |
| 最大漏极电流 (ID) | 6 A | 6 A | 6 A | 6 A | 6 A |
| 最大漏源导通电阻 | 0.66 Ω | 0.66 Ω | 0.66 Ω | 0.66 Ω | 0.66 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-257AA | TO-257AA | TO-257AA | TO-257AA | TO-257AA |
| JESD-30 代码 | R-MSFM-P3 | R-MSFM-P3 | S-MSFM-P3 | S-MSFM-P3 | S-MSFM-P3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | METAL | METAL | METAL | METAL | METAL |
| 封装形状 | RECTANGULAR | RECTANGULAR | SQUARE | SQUARE | SQUARE |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 18 A | 18 A | 18 A | 18 A | 18 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO |
| 端子形式 | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| Is Samacsys | N | N | N | - | - |
| 最大漏极电流 (Abs) (ID) | 6 A | 6 A | - | 6 A | 6 A |
| JESD-609代码 | e0 | e0 | - | e0 | e0 |
| 最高工作温度 | 150 °C | 150 °C | - | 150 °C | 150 °C |
| 最大功率耗散 (Abs) | 50 W | 50 W | - | 50 W | 50 W |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Base Number Matches | 1 | 1 | 1 | - | - |
| 峰值回流温度（摄氏度） | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| 处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| 其他特性 | - | - | RADIATION HARDENED | RADIATION HARDENED | RADIATION HARDENED |
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