FRX130D, FRX130R,
FRX130H
December 2001
Radiation Hardened
N-Channel Power MOSFETs
Description
Fairchild has designed a series of SECOND GENERATION
hardened power MOSFETs of both N-Channel and P-
Channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25m
Ω
. Total
dose hardness is offered at 100K RAD (Si) and 1000K RAD
(Si) with neutron hardness ranging from 1E13n/cm
2
for
500V product to 1E14n/cm
2
for 100V product. Dose rate
hardness (GAMMA DOT) exists for rates to 1E9 without
current limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to exhibit mini-
mal characteristic changes to total dose (GAMMA) and
neutron (n
o
) exposures. Design and processing efforts are
also directed to enhance survival to heavy ion (SEU) and/or
dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages
other than shown above. Reliability screening is available
as either non TX (commercial), TX equivalent of MIL-S-
19500, TXV equivalent of MIL-S-19500, or space equiva-
lent of MIL-S-19500. Contact the Fairchild High-Reliability
Marketing group for any desired deviations from the data
sheet.
Features
• 6A, 100V, r
DS(ON)
=
0.180
Ω
• Second Generation Rad Hard MOSFET Results From
New Design Concepts
• Gamma
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Defined End-Point Specs at 300K RAD (Si) and
1000K RAD (Si)
- Performance Permits Limited Use to 3000K RAD (Si)
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
• Photo Current
- 1.50nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Ordering Information
PART NUMBER
FRX130D1
FRX130D3
FRX130R1
FRX130R3
FRX130R4
FRX130H4
PACKAGE
18 Ld CLCC
18 Ld CLCC
18 Ld CLCC
18 Ld CLCC
18 Ld CLCC
18 Ld CLCC
BRAND
FRX130D1
FRX130D3
FRX130R1
FRX130R3
FRX130R4
FRX130H4
Symbol
D
G
S
Package
18 LEAD CLCC
©2001 Fairchild Semiconductor Corporation
FRX130D, FRX130R, FRX130H Rev. B
FRX130D, FRX130R, FRX130H
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FRX130D, R, H
100
100
6
4
18
±
20
11.4
4.5
0.09
18
6
18
-55 to 150
300
UNITS
V
V
A
A
A
V
W
W
W/
o
C
A
A
A
o
C
o
C
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
Ω
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
µ
H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
S
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
JC
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
GSSF
I
GSSR
I
DSS1
I
DSS2
I
DSS3
I
AR
V
DS(ON)
r
DS(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TH)
Q
g(ON)
Q
gM
V
GP
Q
gS
Q
gD
V
SD
t
rr
R
θ
JC
R
θ
JA
Free Air Operation
I
D
= 6A, V
GD
= 0
I = 6A; di/dt = 100A/
µ
s
V
DD
= 50V, ID = 6A
I
GS1
= I
GS2
0
≤
V
GS
≤
20
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
I
D
= 1mA, V
DS
= V
GS
V
GS
= +20V
V
GS
= -20V
V
DS
= 100V, V
GS
= 0
V
DS
= 80V, V
GS
= 0
V
DS
= 80V, V
GS
= 0, T
C
= 125
o
C
Time = 20
µ
s
V
GS
= 10V, I
D
= 6A
V
GS
= 10V, I
D
= 4A
V
DD
= 50V, I
D
= 6A
Pulse Width = 3
µ
s
Period = 300
µ
s, Rg = 25
Ω
0
≤
V
GS
≤
10 (See Test Circuit)
MIN
100
2.0
-
-
-
-
-
-
-
-
-
-
-
-
1
17
32
3
3
8
0.6
-
-
-
-
TYP
-
MAX
-
4.0
100
100
1
0.025
0.25
18
1.130
0.180
30
100
ns
-
-
-
-
-
-
-
-
-
-
-
-
200
100
4
70
128
12
14
nc
32
1.8
400
11
250
V
ns
o
C/W
UNITS
V
V
nA
nA
µ
A
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain Current
Rated Avalanche Current
Drain to Source On-State Volts
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate-Charge Threshold
Gate-Charge On State
Gate-Charge Total
Plateau Voltage
Gate-Charge Source
Gate-Charge Drain
Diode Forward Voltage
Reverse Recovery Time
Junction To Case
Junction To Ambient
-
-
-
-
-
A
V
Ω
nc
V
©2001 Fairchild Semiconductor Corporation
FRX130D, FRX130R, FRX130H Rev. B
FRX130D, FRX130R, FRX130H
Typical Performance Curves
Unless Otherwise Specified
8
ID, DRAIN (A)
OPERATION IN THIS AREA
IS LIMITED BY r
DS(ON)
ID, DRAIN (A)
6
10
4
2
10ms
FRX130
0
100
50
CASE TEMPERATURE (T
C
)
FRX130
50
VDS DRAIN-TO-SOURCE (V)
100
FIGURE 1. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 2. SAFE OPERATING AREA CURVE CASE
TEMPERATURE = 25
o
C
80
NORMALIZED r
DS(ON)
4
RATED BVDSS
3
100V
2
50V
500V
200V
50
ID, DRAIN (A)
30
20
FRX130
100
500
TIME OF INDUCTIVE DISCHARGE (µs)
1E13
1E15
1E14
FLUENCE - NEUTRONS/cm
2
FIGURE 3. TYPICAL UNCLAMPED INDUCTIVE SWITCHING
FAILURE ONSET AVALANCHE MODE
FIGURE 4. NORMALIZED ON-RESISTANCE vs NEUTRON
FLUENCE N-CHANNEL
DRAIN CURRENT (A)
100
LIMITING INDUCTANCE (H)
1E-4
ILM = 10A
ILM = 30A
10
1E-5
ILM = 100A
ILM = 300A
1E-6
1
FRX130
1E8
1E9
GAMMA DOT - RAD (Si)/s
1E10
30
100
DRAIN SUPPLY (V)
GAMMA DOT
300
FIGURE 5. TYPICAL PHOTO CURRENT vs GAMMA RATE
FIGURE 6. DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA
DOT CURRENT TO I
LM
©2001 Fairchild Semiconductor Corporation
FRX130D, FRX130R, FRX130H Rev. B
FRX130D, FRX130R, FRX130H
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
V
DS
L
+
CURRENT I
TRANSFORMER
AS
BV
DSS
t
P
I
AS
+
V
DD
V
DS
V
DD
-
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
≤
20V
50Ω
-
DUT
50V-150V
50Ω
t
AV
0V
t
P
FIGURE 7. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 8. UNCLAMPED ENERGY WAVEFORMS
V
DD
t
ON
t
D(ON)
t
OFF
t
D(OFF)
t
R
t
F
90%
R
L
V
DS
V
GS
= 12V
DUT
0V
R
GS
V
DS
90%
10%
10%
90%
V
GS
10%
50%
PULSE WIDTH
50%
FIGURE 9. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 10. RESISTIVE SWITCHING WAVEFORMS
©2001 Fairchild Semiconductor Corporation
FRX130D, FRX130R, FRX130H Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
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FACT Quiet Series™
DISCLAIMER
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®
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®
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QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
®
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STAR*POWER™
Stealth™
SuperSOT™-3
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®
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STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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