电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MVRT130KP295CVE3

产品描述Trans Voltage Suppressor Diode, 130000W, 295V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小114KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
标准
下载文档 详细参数 全文预览

MVRT130KP295CVE3概述

Trans Voltage Suppressor Diode, 130000W, 295V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

MVRT130KP295CVE3规格参数

参数名称属性值
是否Rohs认证符合
包装说明ROHS COMPLIANT, PLASTIC PACKAGE-2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
Is SamacsysN
最小击穿电压300 V
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-PALF-W2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散130000 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性BIDIRECTIONAL
最大功率耗散7 W
认证状态Not Qualified
最大重复峰值反向电压295 V
表面贴装NO
技术AVALANCHE
端子面层MATTE TIN
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

下载PDF文档
RT130KP275CV, RT130KP275CA,
RT130KP295CV, RT130KP295CA, e3
AIRCRAFT AC POWER BUS PROTECTION
SCOTTSDALE DIVISION
DESCRIPTION
Microsemi’s
RT130KP275 and RT130KP295
bidirectional 130 kW
Transient Voltage Suppressors (TVSs) protects 120 volt ac airborne
electronic equipment from harsh lightning per
RTCA/DO-160E
Section 22
and is compatible with Section 16 for 180 volt ac 100 ms highline surges
(paragraph 16.5.2.3.1b). Microsemi also offers a broad spectrum of other
TVS products to meet your needs.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
FEATURES
Symmetrical bidirectional TVS construction
Two Working Standoff Voltages of 275 V and 295 V
Available as either low clamp with “CV” suffix or normal
clamping features with “CA” suffix.
Suppresses transients up to
130 kW @ 6.4/69 µs
Fast response with less than 5 ns turn-on time.
Optional 100%
screening for avionics grade
is available
by adding
MA
prefix to part number for added 100%
temperature cycle -55
o
C to +125
o
C (10X), surge (3X) in
each direction, 24 hours HTRB in each direction, and post
test (V
Z
and I
R
)
Options for
screening
in accordance with MIL-PRF-19500
for JAN JANTX, and JANTXV
are also available by adding
MQ, MX, or MV prefixes respectively to part numbers
Moisture classification is Level 1 with no dry pack required
per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
Pin injection protection per RTCA/DO-160E Table 22-
2 up to Level 5 for Waveform 4 (6.4/69 µs) and Level
3 for Waveform 5A (40/120
μs)
at 70
o
C
Compatible with “abnormal surge voltage” as
described in 16.5.2.3.1b of RTCA/DO-160E
The very low clamping with “CV” suffix is designed for
low clamping protection of 400V transistors, IGBTs
and MOSFETs in off-line switching power supplies.
The normal clamp device with “CA” suffix is for use in
less-sensitive applications including RFI/EMI filters
and general across-the-line protection.
Consult Factory for other voltages with similar Peak
Pulse Power capabilities.
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance for Class 1,2, 3 and 4
Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance for Class 2 and 3
Consult Factory for other voltages with similar Peak
Pulse Power capabilities
MAXIMUM RATINGS
Steady-state power dissipation: 7 W @ T
L
= 25
o
C or
1.6 W @ T
A
= 25
o
C when mounted on FR4 PC board.
Peak Pulse Power (P
PP
) at 25
o
C: 130 kW at 6.4/69 µs per
waveform in Figure 8 (derate per Figure 2)
Repetition rate: 0.001% max for T
A
= 25
o
C
o
o
Operating & storage temperatures: -55 C to +150 C
Temperature coefficient of voltage: +0.100%/
o
C max
Solder Temperatures: 260
o
C for 10 s maximum
Working
Standoff
Voltage
V
WM
V max
Maximum
Standby
Current
I
D
@ V
WM
μA
Minimum
Breakdown
Voltage
V
BR
@ I
(BR)
Volts
MECHANICAL & PACKAGING
CASE: Molded Epoxy (meets UL 94V-0
requirements)
FINISH: Tin-Lead or RoHS Compliant annealed
matte-Tin plating solderable per MIL-STD-750,
method 2026
Polarity: No band required for bidirectional
MARKING: Manufacturers logo and part number
(add prefix MA, MQ, MX, etc., for screened parts)
Package dimensions: See last page
RT130KP275, 295CA &
RT130KP275, 295CV,e3
ELECTRICAL PARAMETERS @ 25
o
C
Devices are Bi-directional
Breakdown
Current
I
(BR)
mA
Maximum
Clamping
Voltage
V
C
@ I
PP
(Note 1)
Volts
Peak Pulse
Current
I
PP
@ 6.4/69
μs
(Note 2)
Amps
MICROSEMI PART
NUMBER
RT130KP275CV
275
5
300
5
292
400
RT130KP275CA
275
5
300
5
292
445
RT130KP295CV
295
5
300
5
282
410
RT130KP295CA
295
5
300
5
282
460
NOTE 1:
See MicroNote 108 for lower Clamping Voltage performance at reduced I
P
values relative to I
PP
and P
PP
ratings and Figure 1.
NOTE 2:
Also equivalent to 90 and 87 Amps (40 kW) respectively at a longer impulse of 10/1000
μs
(see Figure 1) with clamping voltages
shown. Also see other equivalent peak pulse power performance levels for aircraft waveforms on page 3 for this device.
Copyright
©
2010
1-24-2010 REV E; SD77A.pdf
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1965  606  1252  1139  2784  54  5  29  58  48 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved