VS-ST1280C..K Series
www.vishay.com
Vishay Semiconductors
Phase Control Thyristors
(Hockey-PUK Version), 2310 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case A-24 (K-PUK)
• High profile hockey PUK
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
A-24 (K-PUK)
• Controlled DC power supplies
• AC controllers
PRODUCT SUMMARY
Package
Diode variation
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
A-24 (K-PUK)
Single SCR
2310 A
400 V, 600 V
1.44 V
100 mA
-40 °C to 125 °C
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Typical
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
2310
55
4150
25
42 500
44 500
9027
8240
400 to 600
200
-40 to 125
UNITS
A
°C
A
°C
A
kA
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST1280C..K
VOLTAGE
CODE
04
06
V
RSM
, MAXIMUM
I
DRM/
I
RRM
MAXIMUM
V
DRM/
V
RRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
NON-REPETITIVE PEAK VOLTAGE AT T
J
= T
J
MAXIMUM
V
V
mA
400
600
500
700
100
Revision: 18-Dec-13
Document Number: 93718
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST1280C..K Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I
2
√t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
2310 (885)
55 (85)
4150
42 500
44 500
35 700
Sinusoidal half wave,
initial T
J
= T
J
maximum
37 400
9027
8241
6383
5828
90 270
0.83
0.90
0.077
0.068
1.44
600
1000
kA
2
√s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 8000 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
T
J
= 25 °C, anode supply 12 V resistive load
mΩ
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
Gate drive 20 V, 20
Ω,
t
r
≤
1 μs
T
J
= T
J
maximum, anode voltage
≤
80 % V
DRM
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 550 A, T
J
= T
J
maximum, dI/dt = 40 A/μs,
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
Ω,
t
p
= 500 μs
VALUES
1000
1.9
μs
200
UNITS
A/μs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
100
UNIT
S
V/μs
mA
Revision: 18-Dec-13
Document Number: 93718
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST1280C..K Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
T
J
= -40 °C
DC gate current required to trigger
I
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= -40 °C
DC gate voltage required to trigger
V
GT
T
J
= 25 °C
T
J
= 125 °C
DC gate current not to trigger
I
GD
T
J
= T
J
maximum
DC gate voltage not to trigger
V
GD
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200
100
50
1.4
1.1
0.9
10
T
J
= T
J
maximum, t
p
≤
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, t
p
≤
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
typ.
16
3
3.0
20
5.0
-
200
-
-
3.0
-
mA
V
mA
max.
UNITS
W
A
V
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to
heatsink
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJ-hs
R
thC-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.042
0.021
0.006
0.003
24 500
(2500)
425
N
(kg)
g
K/W
UNITS
°C
A-24 (K-PUK)
ΔR
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.003
0.004
0.005
0.007
0.012
DOUBLE SIDE
0.003
0.004
0.005
0.007
0.012
RECTANGULAR CONDUCTION
SINGLE SIDE
0.002
0.004
0.005
0.007
0.012
DOUBLE SIDE
0.002
0.004
0.005
0.007
0.012
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 18-Dec-13
Document Number: 93718
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST1280C..K Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
130
120
110
100
90
80
70
130
120
110
100
90
80
70
60
50
40
30
20
0
1000
30˚
ST1280C..K Series
(Single Side Cooled)
R
thJ-hs
(DC) = 0.042 K/W
ST1280C..K Series
(Double Side Cooled)
R
thJ-hs
(DC) = 0.021 K/W
Conduction Angle
Conduction Period
30˚
60
50
40
0
400
60˚
60˚
90˚
120˚
180˚
DC
90˚
120˚
180˚
800
1200
1600
2000
3000
4000
5000
Average On-state current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Maximum Allowable Heatsink Temperature (°C)
Maximum Average On-state Power Loss (W)
130
120
110
100
90
80
70
60
50
40
30
20
0
500
30˚
3600
3200
2800
2400
2000
1600
1200
800
400
0
0
500 1000 1500 2000 2500 3000
Average On-state Current (A)
Conduction Angle
180˚
120˚
90˚
60˚
30˚
ST1280C..K Series
(Single Side Cooled)
R
thJ-hs
(DC) = 0.042 K/W
RMS Limit
Conduction Period
60˚
90˚
120˚
180˚
DC
ST1280C..K Series
T
J
= 125˚C
1000
1500
2000
2500
Average On-state current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Maximum Allowable Heatsink Temperature (°C)
Maximum Average On-state Power Loss (W)
130
120
110
100
90
80
70
60
50
40
30
0
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
1000
2000
3000
4000
5000
Average On-state Current (A)
Conduction Period
DC
180˚
120˚
90˚
60˚
30˚
ST1280C..K Series
(Double Side Cooled)
R
thJ-hs
(DC) = 0.021 K/W
RMS Limit
Conduction Angle
30˚
60˚
90˚
120˚
180˚
ST1280C..K Series
T
J
= 125˚C
500 1000 1500 2000 2500 3000
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Revision: 18-Dec-13
Fig. 6 - On-State Power Loss Characteristics
Document Number: 93718
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST1280C..K Series
www.vishay.com
Vishay Semiconductors
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
40000
35000
30000
25000
20000
15000
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
125˚C
=
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
45000
40000
35000
30000
25000
20000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
125 ˚C
=
No Voltage Reapplied
Rated V
RRM
Reapplied
ST1280C..K Series
ST1280C..K Series
10
100
15000
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
100000
Instantaneous On-state Current (A)
10000
T
J
= 25˚C
1000
T
J
= 125˚C
ST1280C..K Series
100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
(K/W)
0.1
Steady State Value
R
thJ-hs
= 0.042 K/W
(Single Side Cooled)
R
thJ-hs
= 0.021 K/W
(Double Side Cooled)
Transient Thermal Impedance Z
thJ-hs
0.01
(DC Operation)
ST1280C..K Series
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Revision: 18-Dec-13
Document Number: 93718
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
