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IDT54/74FCT373T/AT/CT
FAST CMOS OCTAL TRANSPARENT LATCH
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
FAST CMOS OCTAL
TRANSPARENT LATCH
IDT54/74FCT373T/AT/CT
FEATURES:
•
•
•
•
Std., A, and C grades
Low input and output leakage
≤
1µA (max.)
CMOS power levels
True TTL input and output compatibility:
– V
OH
= 3.3V (typ.)
– V
OL
= 0.3V (typ.)
High Drive outputs (-15mA I
OH
, 48mA I
OL
)
Meets or exceeds JEDEC standard 18 specifications
Military product compliant to MIL-STD-883, Class B and DESC
listed (dual marked)
Power off disable outputs permit "live insertion"
Available in the following packages:
– Industrial: SOIC, SSOP, QSOP
– Military: CERDIP, LCC
DESCRIPTION:
The FCT373Tis an octal transparent latch built using an advanced dual
metal CMOS technology. These octal latches have 3-state outputs and are
intended for bus oriented applications. The flip-flops appear transparent to
the data when Latch Enable (LE) is high. When LE is low, the data that meets
the set-up time is latched. Data appears on the bus when the Output Enable
(OE) is low. When
OE
is high, the bus output is in the high-impedance state.
•
•
•
•
•
FUNCTIONAL BLOCK DIAGRAM
D
0
D
1
D
2
D
3
D
4
D
5
D
6
D
7
D
O
G
D
O
G
D
O
G
D
O
G
D
O
G
D
O
G
D
O
G
D
O
G
LE
OE
O
0
O
1
O
2
O
3
O
4
O
5
O
6
O
7
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
1
© 2009 Integrated Device Technology, Inc.
OCTOBER 2009
DSC-5496/6
IDT54/74FCT373T/AT/CT
FAST CMOS OCTAL TRANSPARENT LATCH
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
PIN CONFIGURATION
O
0
OE
O
0
D
0
D
1
O
1
O
2
D
2
D
3
O
3
GND
2
3
4
5
6
7
8
9
10
19
18
17
16
15
14
13
12
11
O
7
D
7
D
6
O
6
O
5
D
5
D
4
O
4
LE
D
1
O
1
O
2
D
2
D
3
4
5
6
7
8
9
10
11
12
13
3
2
1
20
19
18
17
16
15
14
D
0
O
7
OE
1
20
V
CC
INDEX
V
CC
D
7
D
6
O
6
O
5
D
5
O
4
O
3
CERDIP/ SOIC/ SSOP/ QSOP
TOP VIEW
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
(3)
T
STG
I
OUT
Description
Terminal Voltage with Respect to GND
Storage Temperature
DC Output Current
Max
–0.5 to +7
–0.5 to V
CC
+0.5
–65 to +150
–60 to +120
Unit
V
V
°C
mA
V
TERM
(2)
Terminal Voltage with Respect to GND
PIN DESCRIPTION
Pin Names
Dx
LE
OE
Ox
Data Inputs
Latch Enable Input (Active HIGH)
Output Enable Input (Active LOW)
3-State Outputs
Description
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage may exceed
Vcc by +0.5V unless otherwise noted.
2. Inputs and Vcc terminals only.
3. Output and I/O terminals only.
FUNCTION TABLE
(1)
Dx
H
L
X
Inputs
LE
H
H
X
OE
L
L
H
Outputs
Ox
H
L
Z
CAPACITANCE
(T
A
= +25°C, F = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ.
6
8
Max.
10
12
Unit
pF
pF
NOTE:
1. H = HIGH Voltage Level
X = Don’t Care
L = LOW Voltage Level
Z = High Impedance
NOTE:
1. This parameter is measured at characterization but not tested.
2
GND
LCC
TOP VIEW
LE
D
4
IDT54/74FCT373T/AT/CT
FAST CMOS OCTAL TRANSPARENT LATCH
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: T
A
= –40°C to +85°C, V
CC
= 5.0V ±5%; Military: T
A
= –55°C to +125°C, V
CC
= 5.0V ±10%
Symbol
V
IH
V
IL
I
IH
I
IL
I
OZH
I
OZL
I
I
V
IK
V
H
I
CC
Parameter
Input HIGH Level
Input LOW Level
Input HIGH Current
(4)
Input LOW Current
(4)
High Impedance Output Current
(3-State output pins)
(4)
Input HIGH Current
(4)
Clamp Diode Voltage
Input Hysteresis
Quiescent Power Supply Current
V
CC
= Max., V
I
= V
CC
(Max.)
V
CC
= Min, I
IN
= -18mA
—
V
CC
= Max., V
IN
= GND or V
CC
Test Conditions
(1)
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC
= Max.
V
CC
= Max.
V
CC
= Max
V
I
= 2.7V
V
I
= 0.5V
V
O
= 2.7V
V
O
= 0.5V
Min.
2
—
—
—
—
—
—
—
—
—
Typ.
(2)
—
—
—
—
—
—
—
–0.7
200
0.01
Max.
—
0.8
±1
±1
±1
±1
±1
–1.2
—
1
µA
V
mV
mA
Unit
V
V
µA
µA
µA
OUTPUT DRIVE CHARACTERISTICS
Symbol
V
OH
Parameter
Output HIGH Voltage
Test Conditions
(1)
V
CC
= Min
I
OH
= –6mA MIL
I
OH
= –8mA IND
V
IN
= V
IH
or V
IL
I
OH
= –12mA MIL
I
OH
= –15mA IND
V
CC
= Min
I
OL
= 32mA MIL
V
IN
= V
IH
or V
IL
I
OL
= 48mA IND
V
CC
= Max., V
O
= GND
(3)
V
CC
= 0V, V
IN
or V
O
≤
4.5V
Min.
2.4
2
—
–60
—
Typ.
(2)
3.3
3
0.3
–120
—
Max.
—
—
0.5
–225
±1
V
mA
µA
Unit
V
V
OL
I
OS
I
OFF
Output LOW Voltage
Short Circuit Current
Input/Output Power Off Leakage
(5)
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Not more than one output should be tested at one time. Duration of the test should not exceed one second.
4. The test limit for this parameter is ±5µA at T
A
= –55°C.
5. This parameter is guaranteed but not tested.
3
IDT54/74FCT373T/AT/CT
FAST CMOS OCTAL TRANSPARENT LATCH
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
Symbol
ΔI
CC
I
CCD
Parameter
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply
Current
(4)
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
OE
= GND
One Input Toggling
50% Duty Cycle
I
C
Total Power Supply Current
(6)
V
CC
= Max.
Outputs Open
fi = 10MHz
50% Duty Cycle
OE
= GND
LE = V
CC
One Bit Toggling
V
CC
= Max.
Outputs Open
fi = 2.5MHz
50% Duty Cycle
OE
= GND
LE = V
CC
Eight Bits Toggling
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Per TTL driven input; (V
IN
= 3.4V). All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of
ΔI
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
ΔI
CC
D
H
N
T
+ I
CCD
(f
CP
/2+ f
i
N
i
)
I
CC
= Quiescent Current
ΔI
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
f
i
= Output Frequency
N
i
= Number of Outputs at f
i
All currents are in milliamps and all frequencies are in megahertz.
Test Conditions
(1)
Min.
—
Typ.
(2)
0.5
0.15
Max.
2
0.25
Unit
mA
mA/
MHz
V
IN
= V
CC
V
IN
= GND
—
V
IN
= V
CC
V
IN
= GND
V
IN
= 3.4V
V
IN
= GND
—
1.5
3.5
mA
—
1.8
4.5
V
IN
= V
CC
V
IN
= GND
V
IN
= 3.4V
V
IN
= GND
—
3
6
(5)
mA
—
5
14
(5)
4
嵌入式系统
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