PD - 94663A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number
Radiation Level R
DS(on)
I
D
IRHY597034CM 100K Rads (Si) 0.095Ω -18A*
IRHY593034CM 300K Rads (Si) 0.095Ω -18A*
IRHY597034CM
60V, P-CHANNEL
5
TECHNOLOGY
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
T0-257AA
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C
Continuous Drain Current
-18*
-12.5
-72
75
0.6
±20
120
-18
7.5
-5.3
-55 to 150
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
Á
IAR
EAR
dv/dt
TJ
T STG
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063in/1.6mm from case for 10s )
4.3 ( Typical )
g
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1
05/31/05
IRHY597034CM
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-60
—
—
-2.0
10
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
-0.063
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
0.095
-4.0
—
-10
-25
-100
100
45
18
13
20
120
45
25
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -12.5A
Ã
VDS = VGS, ID = -1.0mA
VDS = -25V, IDS = -12.5A
Ã
VDS= -48V ,VGS=0V
VDS = -48V,
VGS = 0V, TJ =125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -18A
VDS = -30V
VDD = -30V, ID = -18A,
VGS =-12V, RG = 7.5Ω,
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Ciss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1490
575
70
5.5
—
—
—
—
pF
Ω
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
VGS = 0V, VDS = -25V
f = 1.0MHz
f = 1.73MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-18*
-72
-5.0
100
200
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = -18A, VGS = 0V
Ã
Tj = 25°C, IF =-18A, di/dt
≤
-100A/µs
VDD
≤
-25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
1.67
80
°C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHY597034CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Static Drain-to-Source
Ã
On-State Resistance (TO-257AA)
Diode Forward Voltage
Ã
100K Rads(Si)
1
Min
Max
-60
-2.0
—
—
—
—
—
—
—
-4.0
-100
100
-10
0.087
0.095
-5.0
300KRads(Si)
2
Min
Max
-60
-2.0
—
—
—
—
—
—
—
-5.0
-100
100
-10
0.087
0.095
-5.0
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
=-20V
V
GS
= 20 V
V
DS
=-48V, V
GS
=0V
V
GS
= -12V, I
D
=-12.5A
V
GS
= -12V, I
D
=-12.5A
V
GS
= 0V, IS = -18A
1. Part number IRHY597034CM
2. Part number IRHY593034CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
(MeV/(mg/cm
2
))
37.9
59.7
82.3
Energy
(MeV)
252.6
314
350
VDS (V)
Range
(µm)
@VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
33.1
- 60
- 60
- 60
- 60
- 60
30.5
- 60
- 60
- 60
- 45
- 25
28.4
- 60
- 60
- 60
—
—
-70
-60
-50
-40
-30
-20
-10
0
0
5
10
VGS
15
20
Br
I
Au
VDS
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY597034CM
Pre-Irradiation
100
VGS
TOP
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.0V
BOTTOM -4.5V
100
VGS
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
- 5.0V
BOTTOM -4.5V
TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
10
10
-
4.5V
-4.5V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
T J = 25°C
T J = 150°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
100
-I D, Drain-to-Source Current (
Α)
2.0
I
D
= -18A
1.5
1.0
0.5
VDS = -25V
15
60µs PULSE WIDTH
10
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
-V GS , Gate-to-Source Voltage (V)
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHY597034CM
2500
2000
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -18A
V
DS
=-48V
V
DS
=-30V
16
C, Capacitance (pF)
1500
Ciss
Coss
12
1000
8
500
4
Crss
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
20
30
40
50
60
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I SD , Reverse Drain Current (
Α)
-I D, Drain-to-Source Current (A)
10
T J = 150°C
T J = 25°C
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1
100µs
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
1ms
10ms
100
1000
0.1
0.0
1.0
2.0
3.0
VGS = 0V
4.0
5.0
6.0
1
-V SD , Source-to-Drain Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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