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IRFM260D: 产品描述Power Field-Effect Transistor, 35A I(D), 200V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; 产品类别分立半导体晶体管; 文件大小182KB，共7页; 制造商International Rectifier （ Infineon ）; 官网地址http://www.irf.com/

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IRFM260D概述

Power Field-Effect Transistor, 35A I(D), 200V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRFM260D规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
包装说明	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	compliant
ECCN代码	EAR99
Is Samacsys	N
雪崩能效等级（Eas）	700 mJ
外壳连接	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V
最大漏极电流 (ID)	35 A
最大漏源导通电阻	0.068 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-MSFM-P3
JESD-609代码	e0
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	METAL
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	180 A
认证状态	Not Qualified
表面贴装	NO
端子面层	TIN LEAD
端子形式	PIN/PEG
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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PD - 91388C

POWER MOSFET

THRU-HOLE (TO-254AA)

Product Summary

Part Number

IRFM260

200V, N-CHANNEL

HEXFET

MOSFET TECHNOLOGY

DS(on)

0.060

Ω

35A*

HEXFET

MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-

state resistance combined with high transconductance.

HEXFET transistors also feature all of the well-

established advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and

electrical parameter temperature stability. They are well-

suited for applications such as switching power supplies,

motor controls, inverters, choppers, audio amplifiers,

high energy pulse circuits, and virtually any application

where high reliability is required. The HEXFET

transistor’s totally isolated package eliminates the need

for additional isolating material between the device and

the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-254AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

Light-weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 10V, TC = 25°C

ID @ VGS = 10V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

* Current is limited by Package

For footnotes refer to the last page

300 ( 0.063 in.(1.6mm) from case for 10s)

9.3 (Typical)

35*

140

250

2.0

±20

700

4.3

-55 to 150

Units

W/°C

V/ns

www.irf.com

01/18/07

IRFM260D相似产品对比

	IRFM260D	IRFM260	IRFM260PBF	IRFM260UPBF	IRFM260DPBF	IRFM260U
描述	Power Field-Effect Transistor, 35A I(D), 200V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	35 A, 200 V, 0.068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA	Power Field-Effect Transistor, 35A I(D), 200V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3	Power Field-Effect Transistor, 35A I(D), 200V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 35A I(D), 200V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 35A I(D), 200V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
是否无铅	含铅	含铅	不含铅	不含铅	不含铅	含铅
包装说明	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, S-XSFM-P3	FLANGE MOUNT, S-XSFM-P3	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	compliant	unknow	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Is Samacsys	N	N	N	N	N	N
雪崩能效等级（Eas）	700 mJ	700 mJ	700 mJ	700 mJ	700 mJ	700 mJ
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V	200 V	200 V	200 V	200 V	200 V
最大漏极电流 (ID)	35 A	35 A	35 A	35 A	35 A	35 A
最大漏源导通电阻	0.068 Ω	0.068 Ω	0.068 Ω	0.068 Ω	0.068 Ω	0.068 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-MSFM-P3	S-XSFM-P3	S-XSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3
元件数量	1	1	1	1	1	1
端子数量	3	3	3	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	METAL	UNSPECIFIED	UNSPECIFIED	METAL	METAL	METAL
封装形状	RECTANGULAR	SQUARE	SQUARE	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	260	260	260	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	180 A	140 A	140 A	180 A	180 A	180 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	40	40	40	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1
是否Rohs认证	不符合	-	符合	符合	符合	不符合

IRFM260D

IRFM260D概述

IRFM260D规格参数

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