TRANSISTOR,BJT,PNP,40V V(BR)CEO,1A I(C),TO-237
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| Reach Compliance Code | compliant |
| Is Samacsys | N |
| 最大集电极电流 (IC) | 1 A |
| 配置 | Single |
| 最小直流电流增益 (hFE) | 30 |
| JESD-609代码 | e0 |
| 最高工作温度 | 140 °C |
| 极性/信道类型 | PNP |
| 最大功率耗散 (Abs) | 2 W |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 标称过渡频率 (fT) | 3 MHz |
| Base Number Matches | 1 |
| TN4234 | 2N6729 | 2N6730 | NSD6180 | |
|---|---|---|---|---|
| 描述 | TRANSISTOR,BJT,PNP,40V V(BR)CEO,1A I(C),TO-237 | TRANSISTOR 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN, BIP General Purpose Small Signal | TRANSISTOR 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN, BIP General Purpose Small Signal | TRANSISTOR,BJT,PNP,75V V(BR)CEO,2A I(C),TO-202AA |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | compliant | unknow | unknow | compliant |
| 最大集电极电流 (IC) | 1 A | 1 A | 1 A | 2 A |
| 配置 | Single | SINGLE | SINGLE | Single |
| 最小直流电流增益 (hFE) | 30 | 50 | 50 | 40 |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 最高工作温度 | 140 °C | 150 °C | 150 °C | 140 °C |
| 极性/信道类型 | PNP | PNP | PNP | PNP |
| 最大功率耗散 (Abs) | 2 W | 2 W | 2 W | 10 W |
| 表面贴装 | NO | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 标称过渡频率 (fT) | 3 MHz | 50 MHz | 50 MHz | 50 MHz |
| Base Number Matches | 1 | 1 | 1 | - |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
