NTMFSS1D1N06CL
Product Preview
Power MOSFET
Features
60 V, 1.2 mW, 287 A, Single N−Channel,
Source−Down SO8−FL
•
•
•
•
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
These Devices are Pb−Free, Halogen−Free / BFR Free and are RoHS
Compliant
DC−DC Converters
Power Load Switch
Notebook Battery Management
Synchronous Rectifier
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
(Note 2)
Power Dissipation
R
qJC
(Note 2)
Continuous Drain Cur-
rent R
qJA
(Notes 1, 2)
Power Dissipation
R
qJA
(Notes 1, 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 25°C
T
A
= 25°C
Steady
State
T
A
= 25°C
Symbol
V
DSS
V
GS
I
D
P
D
I
D
P
D
I
DM
T
J
, T
stg
E
AS
T
L
Value
60
±20
287
200
40
3.9
900
−55
to
+150
776
260
Unit
V
V
A
W
A
W
A
°C
mJ
°C
S (5)
N−CHANNEL MOSFET
G (1)
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V
(BR)DSS
60 V
R
DS(ON)
MAX
1.2 mW @ 10 V
1.7 mW @ 4.5 V
I
D
MAX
287 A
Typical Applications
D (2,3,4)
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
MARKING
DIAGRAM
1
DFN8 5x6
CASE 506EB
G
D
D
D
S
XXXXXX
AYWZZ
S
T
A
= 25°C, t
p
= 10
ms
Operating Junction and Storage Temperature
Range
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= TBD A, L = TBD mH)
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
NTMFSS1D1N06CLT1G
NTMFSS1D1N06CLT3G
Package
SO−8FL
(Pb−Free)
SO−8FL
(Pb−Free)
Shipping
†
1500 / Tape
& Reel
5000 / Tape
& Reel
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case
−
Steady State (Note 2)
Junction−to−Ambient
−
Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
0.75
39
Unit
°C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 1 in
2
pad size, 2 oz. Cu pad.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2018
September, 2018
−
Rev. P0
1
Publication Order Number:
NTMFSS1D1N06CL/D
NTMFSS1D1N06CL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
R
G
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TOT)
Q
GD
Q
GS
V
GP
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V,
I
S
= 50 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 4.5 V, V
DD
= 30 V,
I
D
= 50 A, R
G
= 2.5
W
V
GS
= 10 V, V
DS
= 30 V, I
D
= 50 A
V
GS
= 4.5 V, V
DS
= 30 V, I
D
= 50 A
V
GS
= V
DS
, I
D
= 250
mA
I
D
= 250
mA,
ref to 25°C
V
GS
= 10 V, I
D
= 50 A
V
GS
= 4.5 V, I
D
= 50 A
Forward Transconductance
Gate Resistance
CHARGES & CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Capacitance
Total Gate Charge
Total Gate Charge
Gate−to−Drain Charge
Gate−to−Source Charge
Plateau Voltage
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
0.78
0.64
98
45
53
190
nC
ns
1.2
V
21.8
79.1
57.8
81.3
ns
V
GS
= 0 V, f = 1 MHz, V
DS
= 25 V
8900
3750
40
52
120
12.7
21.4
2.8
V
nC
pF
V
DS
= 15 V, I
D
= 50 A
T
A
= 25°C
1.2
−5.9
0.93
1.25
180
TBD
1.2
1.7
S
W
2.0
V
mV/°C
mW
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS
= 0 V, I
D
= 250
mA
I
D
= 250
mA,
ref to 25°C
V
GS
= 0 V, V
DS
= 60 V
T
J
= 25°C
60
22.9
10
100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
= 20 V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
V
GS
= 0 V, dI/dt = 100 A/ms,
I
S
= 50 A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTMFSS1D1N06CL
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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www.onsemi.com/site/pdf/Patent−Marking.pdf.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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