PESDxV4UF; PESDxV4UG;
PESDxV4UW
Very low capacitance unidirectional quadruple ESD
protection diode arrays
Rev. 03 — 28 January 2008
Product data sheet
1. Product profile
1.1 General description
Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection
diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to
protect up to four signal lines from the damage caused by ESD and other transients.
Table 1.
Product overview
Package
NXP
PESD3V3V4UF
PESD5V0V4UF
PESD3V3V4UG
PESD5V0V4UG
PESD3V3V4UW
PESD5V0V4UW
SOT886
SOT886
SOT353
SOT353
SOT665
SOT665
JEITA
-
-
SC-88A
SC-88A
-
-
JEDEC
MO-252
MO-252
-
-
-
-
leadless ultra small
leadless ultra small
very small
very small
ultra small and flat lead
ultra small and flat lead
Package configuration
Type number
1.2 Features
I
I
I
I
ESD protection of up to four lines
Very low diode capacitance
Max. peak pulse power: P
PP
= 16 W
Low clamping voltage: V
CL
= 11 V
I
I
I
I
Ultra low leakage current: I
RM
= 25 nA
ESD protection up to 12 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 1.5 A
1.3 Applications
I
Computers and peripherals
I
Audio and video equipment
I
Cellular handsets and accessories
I
Communication systems
I
Portable electronics
I
Subscriber Identity Module (SIM) card
protection
NXP Semiconductors
PESDxV4UF/G/W
Very low capacitance quadruple ESD protection diode arrays
1.4 Quick reference data
Table 2.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
reverse standoff voltage
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
C
d
diode capacitance
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
f = 1 MHz; V
R
= 0 V
-
15
18
pF
-
-
3.3
V
Parameter
Conditions
Min
Typ
Max
Unit
-
-
5.0
V
-
12
15
pF
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
common anode
cathode (diode 4)
6
5
bottom view
4
1
2
3
1
2
3
006aaa156
Simplified outline
Symbol
PESD3V3V4UF; PESD5V0V4UF
6
5
4
PESD3V3V4UG; PESD5V0V4UG
1
2
3
4
5
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
cathode (diode 4)
1
2
3
006aaa157
5
4
1
2
3
4
5
PESD3V3V4UW; PESD5V0V4UW
1
2
3
4
5
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
cathode (diode 4)
1
2
3
5
4
1
2
3
006aaa157
5
4
PESDXV4UF_G_W_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 28 January 2008
2 of 16
NXP Semiconductors
PESDxV4UF/G/W
Very low capacitance quadruple ESD protection diode arrays
3. Ordering information
Table 4.
Ordering information
Package
Name
PESD3V3V4UF
PESD5V0V4UF
PESD3V3V4UG
PESD5V0V4UG
PESD3V3V4UW -
PESD5V0V4UW
plastic surface-mounted package; 5 leads
SOT665
SC-88A
XSON6
Description
plastic extremely thin small outline package;
no leads; 6 terminals; body 1
×
1.45
×
0.5 mm
plastic surface-mounted package; 5 leads
Version
SOT886
SOT353
Type number
4. Marking
Table 5.
Marking codes
Marking code
[1]
A7
A8
V1*
V2*
W1
W2
Type number
PESD3V3V4UF
PESD5V0V4UF
PESD3V3V4UG
PESD5V0V4UG
PESD3V3V4UW
PESD5V0V4UW
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
PP
I
PP
Per device
T
j
T
amb
T
stg
[1]
[2]
[3]
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
µs
t
p
= 8/20
µs
[1][2][3]
[1][2][3]
Min
-
-
-
−65
−65
Max
16
1.5
150
+150
+150
Unit
W
A
°C
°C
°C
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
For PESDxV4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
For PESDxV4UG and PESDxV4UW measured from pin 1, 3, 4 or 5 to pin 2.
PESDXV4UF_G_W_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 28 January 2008
3 of 16
NXP Semiconductors
PESDxV4UF/G/W
Very low capacitance quadruple ESD protection diode arrays
Table 7.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
ESD
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
[1]
[2]
[3]
Device stressed with ten non-repetitive ESD pulses.
For PESDxV4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
For PESDxV4UG and PESDxV4UW measured from pin 1, 3, 4 or 5 to pin 2.
[1][2][3]
Parameter
Conditions
Min
-
-
Max
12
10
Unit
kV
kV
Table 8.
Standard
Per diode
ESD standards compliance
Conditions
> 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1. 8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
PESDXV4UF_G_W_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 28 January 2008
4 of 16
NXP Semiconductors
PESDxV4UF/G/W
Very low capacitance quadruple ESD protection diode arrays
6. Characteristics
Table 9.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
Per diode
V
RWM
reverse standoff voltage
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
I
RM
reverse leakage current
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
V
BR
breakdown voltage
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
C
d
diode capacitance
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
f = 1 MHz
V
R
= 0 V
-
15
18
pF
V
RWM
= 3.3 V
-
40
300
nA
-
-
3.3
V
Conditions
Min
Typ
Max
Unit
-
-
5.0
V
V
RWM
= 5.0 V
-
3
25
nA
I
R
= 1 mA
5.3
5.6
5.9
V
6.4
6.8
7.2
V
V
R
= 3.3 V
-
9
12
pF
V
R
= 0 V
-
12
15
pF
V
R
= 5 V
-
6
9
pF
PESDXV4UF_G_W_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 28 January 2008
5 of 16
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