VSK.26..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAK
TM
Generation 5 Power Modules), 27 A
FEATURES
• High voltage
• Industrial standard package
• Thick copper baseplate
• UL E78996 approved
• 3500 V
RMS
isolating voltage
• Totally lead (Pb)-free
• Designed and qualified for industrial level
ADD-A-PAK
TM
RoHS
COMPLIANT
PRODUCT SUMMARY
I
T(AV)
or I
F(AV)
27 A
BENEFITS
• Up to 1600 V
• Fully compatible TO-240AA
• High surge capability
• Easy mounting on heatsink
• Al
2
0
3
DBC insulator
• Heatsink grounded
MECHANICAL DESCRIPTION
The Generation 5 of ADD-A-PAK
TM
modules combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device. The Cu baseplate
allows an easier mounting on the majority of heatsink with
increased tolerance of surface roughness and improved
thermal spread. The Generation 5 of AAP modules is
manufactured without hard mold, eliminating in this way any
possible direct stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery chargers.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
or I
F(AV)
I
O(RMS)
I
TSM,
I
FSM
I
2
t
I
2
√t
V
RRM
T
Stg
T
J
Range
CHARACTERISTICS
85 °C
As AC switch
50 Hz
60 Hz
50 Hz
60 Hz
VALUES
27
60
400
420
800
730
8000
400 to 1600
- 40 to 125
A
2
√s
V
°C
A
2
s
A
UNITS
Document Number: 94418
Revision: 22-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
VSK.26..PbF Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
06
08
VSK.26
10
12
14
16
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
400
600
800
1000
1200
1400
1600
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
500
700
900
1100
1300
1500
1700
V
DRM
, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
400
600
800
1000
1200
1400
1600
15
I
RRM,
I
DRM
AT 125 °C
mA
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAK
TM
Generation 5 Power Modules), 27 A
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
(thyristors)
Maximum average forward current
(diodes)
Maximum continuous RMS on-state current
as AC switch
SYMBOL
I
T(AV)
I
F(AV)
TEST CONDITIONS
180° conduction, half sine wave,
T
C
= 85 °C
VALUES
UNITS
27
I
O(RMS)
t = 10 ms
t = 8.3 ms
I
(RMS)
or
I
(RMS)
60
A
400
No voltage
reapplied
100 % V
RRM
reapplied
Maximum peak, one-cycle
non-repetitive on-state
or forward current
I
TSM
or
I
FSM
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Sinusoidal
half wave,
initial T
J
= T
J
maximum
420
335
350
470
490
800
730
560
510
1100
1000
8000
0.92
0.95
12.11
11.82
1.95
150
200
400
A
2
√s
V
mΩ
V
A/µs
A
2
s
T
J
= 25 °C, no voltage reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Initial T
J
= T
J
maximum
Maximum I
2
t for fusing
I
2
t
T
J
= 25 °C, no voltage reapplied
Maximum I
2
√t
for fusing
Maximum value or threshold voltage
Maximum value of on-state
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of
rise of turned on current
Maximum holding current
Maximum latching current
I
2
√t
(1)
V
T(TO) (2)
r
t (2)
V
TM
V
FM
dI/dt
I
H
I
L
t = 0.1 to 10 ms, no voltage reapplied
Low level
(3)
High level
High level
(4)
T
J
= T
J
maximum
T
J
= T
J
maximum
T
J
= 25 °C
Low level
(3)
(4)
I
TM
=
π
x I
T(AV)
I
FM
=
π
x I
F(AV)
T
J
= 25 °C, from 0.67 V
DRM
,
I
TM
=
π
x I
T(AV)
, I
g
= 500 mA, t
r
< 0.5 µs, t
p
> 6 µs
T
J
= 25 °C, anode supply = 6 V,
resistive load, gate open circuit
T
J
= 25 °C, anode supply = 6 V, resistive load
(3)
(4)
mA
Notes
(1)
I
2
t for time t = I
2
√t
x
√t
x
x
(2)
Average power = V
2
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
)
www.vishay.com
2
16.7 % x
π
x I
AV
< I <
π
x I
AV
I >
π
x I
AV
Document Number: 94418
Revision: 22-Apr-08
For technical questions, contact: ind-modules@vishay.com
VSK.26..PbF Series
Thyristor/Diode and Thyristor/Thyristor
Vishay High Power Products
TM
Generation 5 Power Modules), 27 A
(ADD-A-PAK
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum gate voltage required to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
- V
GM
T
J
= - 40 °C
V
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= - 40 °C
Maximum gate current required to trigger
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
I
GT
V
GD
I
GD
T
J
= 25 °C
T
J
= 125 °C
Anode supply = 6 V
resistive load
Anode supply = 6 V
resistive load
TEST CONDITIONS
VALUES
10
2.5
2.5
10
4.0
2.5
1.7
270
150
80
0.25
6
V
mA
mA
V
UNITS
W
A
T
J
= 125 °C, rated V
DRM
applied
T
J
= 125 °C, rated V
DRM
applied
BLOCKING
PARAMETER
Maximum peak reverse and off-state
leakage current at V
RRM
, V
DRM
RMS insulation voltage
Maximum critical rate of rise of off-state voltage
SYMBOL
I
RRM
,
I
DRM
V
INS
dV/dt
(1)
TEST CONDITIONS
T
J
= 125 °C, gate open circuit
50 Hz, circuit to base, all terminals shorted
T
J
= 125 °C, linear to 0.67 V
DRM
VALUES
15
2500 (1 min)
3500 (1 s)
500
UNITS
mA
V
V/µs
Note
(1)
Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT26/16AS90
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating and storage
temperature range
Maximum internal thermal resistance,
junction to case per module
Typical thermal resistance,
case to heatsink
to heatsink
Mounting torque ± 10 %
busbar
Approximate weight
Case style
JEDEC
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread
of the compound.
TEST CONDITIONS
VALUES
- 40 to 125
0.31
K/W
0.1
5
Nm
3
110
4
TO-240AA
g
oz.
UNITS
°C
ΔR
CONDUCTION PER JUNCTION
DEVICES
VSK.26
SINE HALF WAVE CONDUCTION
180°
0.23
120°
0.27
90°
0.34
60°
0.48
30°
0.73
180°
0.17
RECTANGULAR WAVE CONDUCTION
120°
0.28
90°
0.36
60°
0.49
30°
0.73
UNITS
°C/W
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Document Number: 94418
Revision: 22-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
VSK.26..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAK
TM
Generation 5 Power Modules), 27 A
Maximum Average On-state Power Loss (W)
70
60
50
40
30
Conduction Period
Maximum Allowable Case T
empera ture (°C)
130
VSK.26.. S
eries
R
thJC
(DC) = 0.62 K/ W
120
110
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
100
30°
90
60°
90°
120°
20
10
0
0
10
20
30
40
50
Average On-state Current (A)
VSK.26.. S
eries
Per Junction
T
J
= 125°C
180°
80
0
5
10
15
20
25
30
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
Maximum Allowable Cas T
e empera ture (°C)
VSK.26.. S
eries
R
thJC
(DC) = 0.62 K/ W
Peak Half S
ine Wave On-s
tate Current (A)
130
400
120
350
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
110
Conduction Period
300
100
30°
60°
90°
250
90
120°
180°
DC
40
50
200
VSK.26.. S
eries
Per Junc tion
150
1
10
100
Numb er Of E ual Amplitud e Half Cycle Current Pulses (N)
q
80
0
10
20
30
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Ma ximum Average On-sta te Power Loss (W)
40
180°
120°
90°
60°
30°
RMS Limit
Peak Half S Wave On-state Current (A)
ine
50
400
350
30
300
Ma ximum Non Repetitive S
urge Current
Versus Pulse T in Duration. Control
ra
Of Conduc tion May Not Be Maintained.
Initial T = 125°C
J
No Voltage Reap plied
Rated V
RRM
R
eapplied
20
Cond uction Angle
250
10
VSK.26.. S
eries
Per Junction
T
J
= 125°C
0
5
10
15
20
25
30
200
VSK.26.. S
eries
Per Junction
150
0.01
0.1
Pulse T
rain Duration (s)
1
0
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94418
Revision: 22-Apr-08
VSK.26..PbF Series
Thyristor/Diode and Thyristor/Thyristor
Vishay High Power Products
TM
Generation 5 Power Modules), 27 A
(ADD-A-PAK
100
Maximum T
otal On-s te Power Los (W)
ta
s
R
thSA
90
80
70
60
50
40
180°
120°
90°
60°
30°
0.3
0.5
W
K/
7
0.
W
K/
1
W
K/
1.
5
K/
W
/
KW
1 K/
= 0.
W-
a
Delt
2K
/W
R
Conduction Angle
3K
/W
4 K/
W
30
20
10
0
0
10
20
30
40
50
VSK.26.. Series
Per Module
T
J
= 125°C
8 K/ W
60
0
20
40
60
80
100
120
140
T
otal RMSOutput Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 7 - On-State Power Loss Characteristics
250
S
R
th
0. 2
3
0.
A
Maximum T
otal Power Loss (W)
W
K/
K/ W
.1
=0
W
K/
200
0.
5
K/
W
K/
W
el t
-D
150
100
180°
(S
ine)
180°
(Rec t)
0.7
aR
1K
/W
1.5
K/
W
50
2 x VSK.26.. S
eries
S
ingle Phase Bridge
Connec ted
T
J
= 125°C
0
10
20
30
40
50
3 K/ W
8 K/ W
0
0
60
20
40
60
80
100
120
140
T
otal Output Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 8 - On-State Power Loss Characteristics
350
R
t hS
2
0.
Maximum T
otal Power Loss (W)
300
0.
3
A
W
K/
K/
W
=
W
K/
0.1
250
200
150
100
50
0
0
10
20
30
40
50
60
70
80
0
3 x VSK.26.. S
eries
T
hree Phase Bridge
Connected
T = 125°C
J
120°
(R t)
ec
0.
4
0.5
0.7
elt
-D
K/
W
a
K/
W
K/
W
W
R
1 K/
1.5 K
/W
3KW
/
20
40
60
80
100
120
140
T
otal Output Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94418
Revision: 22-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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