COM150A COM350A
COM250A COM450A
(COTS) COMMERCIAL OFF-THE-SHELF
POWER MOSFET IN A TO-254AA PA C K A G E
100V Thru 500V, Up To 25 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
•
•
•
•
Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Standard Off-The-Shelf
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications
such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
MAXIMUM RATINGS
@
PART NUMBER
COM150A
COM250A
COM350A
COM450A
25
°
C
V
D S
100 V
200 V
400 V
500 V
R
DS(on)
.070
.100
.32
.42
I
D
25 A
20 A
12 A
10 A
31
.
S C H E M ATIC
P O W E R R ATING
8 09 R0
31 - 1
.
31
.
COM150A - COM450A
ELECTRICAL CHARACTERISTICS:
STATIC
Parameter
B V
D SS
V
GS(th)
I
GSSF
I
SSR
G
I
S
DS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
V
DS(on)
R
DS(on)
R
DS(on)
On-State Drain
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
Current
1
35
11
.
01
.
02
.
(
C
= 25°C unless otherwise noted)
T
ELECTRICAL CHARACTERISTICS:
STATIC
P/N COM250A
Parameter
B V
D S S
V
GS(th)
I
GSSF
I
SSR
G
I
SS
D
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
V
DS(on)
R
DS(on)
R
DS(on)
On-State Drain
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
Current
1
30
01
.
02
.
(
C
= 25°C unless otherwise noted)
T
P/N COM150A
Min. Typ. Max. Units Test Conditions
100
20
.
40
.
100
-10
0
0.25
10
.
V
V
nA
nA
mA
mA
A
13
.
V
V
G S
= 0
,
I = 250 mA
D
V
D S
= V
G S
,
D
= 250 mA
I
V
G S
= +20 V
V
G S
= -20 V
V
D S
= Max. Rat., V
G S
= 0
V
D S
= 0.8 Max. Rat., V
G S
= 0
,
T
C
= 125° C
V
D S
2 V
DS(on)
,V
G S
= 10 V
Min. Typ. Max. Units Test Conditions
200
20
.
40
.
100
-100
0.25
10
.
V
V
nA
nA
mA
mA
A
1.36 1.60
.085 .100
0.15 0.18
V
V
G S
= 0
,
I = 250 mA
D
V
D S
= V
G S
,
D
= 250 mA
I
V
G S
= + 20 V
V
G S
= - 2 V
0
V
D S
= Max. Rat., V
G S
= 0
V
D S
= 0.8 Max. Rat., V
G S
= 0
,
T
C
= 125° C
V
D S
2 V
DS(on)
,V
G S
= 10 V
Static Drain-Source On-State
V
G S
= 1 V I
D
= 20 A
0 ,
V
G S
= 1 V I
D
= 20 A
0 ,
V
G S
= 1 V I
D
= 20 A,
0 ,
T
C
= 125 C
Static Drain-Source On-State
V
G S
= 1 V I
D
= 16 A
0 ,
V
G S
= 1 V I
D
= 16 A
0 ,
V
G S
= 1 V I
D
= 16 A,
0 ,
T
C
= 125 C
0.55 0.07
10
.
0.12
g
f
s
C
iss
C
oss
C
rss
t
d(on)
t
r
t
(off)
d
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
90
.
2700
1300
470
28
45
100
50
S(
)
V
D S
W
pF
pF
pF
ns
ns
ns
ns
2 V
DS(on)
,
D
= 20 A
I
g
f
s
C
iss
C
oss
C
rss
t
d(on)
t
r
t
(off)
d
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
10.0
2400
600
250
25
60
85
38
S(
)
V
D S
W
pF
pF
pF
ns
ns
ns
ns
V
G S
= 0
V
D S
= 25 V
f = 1 MHz
V
D D
= 3 V I
D
@ 20 A
0 ,
R
g
= 5 0 W ,V
G
= 10V
.
(MOSFET switching times are
essentially independent of
operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
M
S
V
S D
t
r
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
400
Modified MOSPOWER
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
M
S
S
-4
0
-10
6
- 25
.
A
symbol showing
teitga PN
h nerl -
G
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
350
-3
0
-10
2
-2
A
J n t o r c i i r.
ucin etfe
V
ns
T
C
= 25 C I
S
= -40 A, V
G S
= 0
,
,
T
J
= 150 C I
F
=I
S
,
d
F
/ds = 100 A/ms
l
V
S D
t
r
1 Pulse Test: Pulse Width
300msec, Duty Cycle
2%.
1 Pulse Test: Pulse Width
300msec, Duty Cycle
2%.
( )
W
A
A
V
ns
( )
W
31 - 2
.
DYNAMIC
DYNAMIC
2 V
DS(on)
,
D
= 16 A
I
V
G S
= 0
V
D S
= 25 V
f = 1 MHz
V
D D
= 7 V I
D
@ 16 A
5 ,
R
g
= 5 0 W ,
G S
= 10V
.
V
(MOSFET switching times are
essentially independent of
operating temperature.)
Modified MOSPOWER
symbol showing
teitga PN
h nerl -
J n t o r c i i r.
ucin etfe
G
D
S
T
C
= 25 C I
S
= -30 A, V
G S
= 0
,
,
T
J
= 150 C I
F
=I
S
,
d
F
/ds = 100 A/ms
l
ELECTRICAL CHARACTERISTICS:
STATIC
Parameter
B V
D S S
V
GS(th)
I
GSSF
I
SSR
G
I
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
V
DS(on)
R
DS(on)
R
DS(on)
On-State Drain
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
Current
1
15
20
.
0.25
01
.
02
.
(
C
= 25°C unless otherwise noted)
T
ELECTRICAL CHARACTERISTICS:
STATIC
P/N COM450A
Parameter
B V
D S S
V
GS(th)
I
GSSF
I
SSR
G
I
SS
D
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
V
DS(on)
R
DS(on)
R
DS(on)
On-State Drain
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
Current
1
13
21
.
03
.
01
.
02
.
(
C
= 25°C unless otherwise noted)
T
P/N COM350A
Min. Typ. Max. Units Test Conditions
400
20
.
40
.
100
-10
0
0.25
10
.
V
V
nA
nA
mA
mA
A
2.64
.2
3
V
V
G S
= 0
,
I = 250 mA
D
V
D S
= V
G S
,
D
= 250 mA
I
V
G S
= +20 V
V
G S
= - 2 V
0
V
D S
= Max. Rat., V
G S
= 0
V
D S
= 0.8 Max. Rat., V
G S
= 0
,
T
C
= 125° C
V
D S
2 V
DS(on)
,V
G S
= 10 V
Min. Typ. Max. Units Test Conditions
500
20
.
40
.
100
-10
0
0.25
10
.
V
V
nA
nA
mA
mA
A
2.94
0.42
V
V
G S
= 0
,
I = 250 mA
D
V
D S
= V
G S
,
D
= 250 mA
I
V
G S
= +20 V
V
G S
= - 2 V
0
V
D S
= Max. Rat., V
G S
= 0
V
D S
= 0.8 Max. Rat., V
G S
= 0
,
T
C
= 125° C
V
D S
2 V
DS(on)
,V
G S
= 10 V
Static Drain-Source On-State
V
G S
= 1 V I
D
= 8.0 A
0 ,
V
G S
= 1 V I
D
= 8.0 A
0 ,
V
G S
= 1 V I
D
= 8 0 A
0 ,
. ,
T
C
= 125 C
Static Drain-Source On-State
V
G S
= 1 V I
D
= 7.0 A
0 ,
V
G S
= 1 V I
D
= 7.0 A
0 ,
V
G S
= 1 V I
D
= 7 0 A
0 ,
. ,
T
C
= 125 C
0.51 0.67
0.67 0.89
g
f
s
C
iss
C
oss
C
rss
t
d(on)
t
r
t
(off)
d
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
60
.
2900
450
150
30
40
80
30
S(
)
V
D S
W
pF
pF
pF
ns
ns
ns
ns
2 V
DS(on)
,
D
= 8.0 A
I
g
f
s
C
iss
C
oss
C
rss
t
d(on)
t
r
t
(off)
d
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
60
.
2600
280
40
30
46
75
31
S(
)
V
D S
W
pF
pF
pF
ns
ns
ns
ns
V
G S
= 0
V
D S
= 25 V
f = 1 MHz
V
D D
= 2 0 V I
D
@ 8.0 A
0 ,
R
g
= . W ,V
G S
=10V
50
(MOSFET switching times are
essentially independent of
operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
M
S
V
S D
t
r
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
600
Modified MOSPOWER
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
M
S
S
-1
5
-6
0
- 16
.
A
symbol showing
teitga PN
h nerl -
G
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
700
-1
3
-5
2
- 14
.
A
Jnto rciir
ucin etfe.
V
ns
T
C
= 25 C I
S
= -15 A, V
G S
= 0
,
,
T
J
= 100 C I
F
=I
S
,
d
F
/ds = 100 A/ms
l
V
S D
t
r
1 Pulse Test: Pulse Width
300msec, Duty Cycle
2%.
1 Pulse Test: Pulse Width
300msec, Duty Cycle
2%.
( )
W
A
A
V
ns
( )
W
31-3
.
DYNAMIC
DYNAMIC
2 V
DS(on)
,
D
= 7.0 A
I
V
G S
= 0
V
D S
= 25 V
f = 1 MHz
V
D D
= 2 0 V I
D
@ 7.0 A
1 ,
R
g
= 5 0 W ,V
G S
= 10 V
.
(MOSFET switching times are
essentially independent of
operating temperature.)
Modified MOSPOWER
symbol showing
teitga PN
h nerl -
Jnto rciir
ucin etfe.
G
D
COM150A - COM450A
S
T
C
= 25 C I
S
= -13 A, V
G S
= 0
,
,
T
J
= 150 C I
F
=I
S
,
d
F
/ds = 100 A/ms
l
31
.
COM150A - COM450A
ABSOLUTE MAXIMUM RATINGS (
C
= 25°C unless otherwise noted)
T
Parameter
V
D S
V
D G R
I @ T
C
= 25°C
D
I @ T
C
= 100°C
D
I
M
D
V
G S
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
Junction To Case
Junction To Ambient
T
J
T
stg
Lead Temperature
Drain-Source Voltage
Drain-Gate Voltage (R
G S
= 1 M )
Continuous Drain Current
2
Continuous Drain Current
2
Pulsed Drain Current
1
Gate-Source Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Linear Derating Factor
Operating and
Storage Temperature Range
(1/16" from case for 10 secs.)
2%.
-55 to 150
300
-55 to 150
300
-55 to 150
300
-55 to 150
300
°C
°C
COM150A
100
100
±25
±16
±100
± 20
125
50
10
.
.020
COM250A COM350A COM450A
200
200
±25
±16
±80
± 20
125
50
10
.
.020
400
400
±13
±8
±54
±20
125
50
10
.
.020
500
500
±11
±7
±40
± 20
125
50
10
.
.020
Units
V
V
A
A
A
V
W
W
W/°C
W/°C
1 Pulse Test: Pulse width 300 µsec. Duty Cycle
2 Package Pin Limitation = 15 Amps
THERMAL RESISTA N C E
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
10
.
50
°C/W
°C/W Free Air Operation
MECHANICAL OUTLINE
.144 DIA.
.545
.535
.050
.040
31
.
.685
.665
.800
.790
.550
.530
1
2
3
.550
.510
.045
.035
.150 TYP.
.260
.249
.005
.150 TYP.
P n 1 Drain
i :
P n 2 Source
i :
P n 3 Gate
i :
205 Crawford Street, Leominster, MA 01453 USA (978) 534-5776 FAX (978) 537-4246
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