MUBW 75-17 T8
Converter - Brake - Inverter Module
(CBI3)
with Trench IGBT technology
21
D11
NTC
8
1
9
D12
D14
2
D16
3
T7
14
11
10
23
24
T2
7
D13
D15
22
D7
T1
16
15
6
T4
12
D1
T3
18
17
5
T6
13
D6
D3
T5
20
19
4
D5
D2
D4
E72873
Three Phase
Rectifier
I
FAVM
= 70 A
I
C25
Brake
Chopper
=
48 A
1.8 V
Three Phase
Inverter
V
CES
= 1700 V
I
C25
= 113 A
2.0 V
Application: AC motor drives with
Maximum Ratings
2200
V
A
A
A
W
50
155
700
130
• Input from single or three phase grid
• Three phase synchronous or
asynchronous motor
• Electric braking operation
Features
• High level of integration - only one
power semiconductor module
required for the whole drive
• IGBT technology with low saturation
voltage, low switching losses and tail
current, high RBSOA and short circuit
ruggedness
• Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
• Industry standard package with
insulated copper base plate and
soldering pins for PCB mounting
• Temperature sense included
V
CE(sat)
=
V
RRM
= 2200 V V
CES
= 1700 V
I
FSM
= 700 A
V
CE(sat)
=
Input Rectifier Bridge D11 - D16
Symbol
V
RRM
I
FAV
I
DAVM
I
FSM
P
tot
T
C
= 80°C; sine 180°
T
C
= 80°C; rectangular; d =
1
/
3
; bridge
T
C
= 25°C; t = 10 ms; sine 50 Hz
T
C
= 25°C
Conditions
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
1.4
1.3
1.5
0.95
max.
1.5
0.05
V
V
mA
mA
K/W
V
F
I
R
R
thJC
I
F
= 75 A;
V
R
= V
RRM
;
(per diode)
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
IXYS reserves the right to change limits, test conditions and dimensions.
20090826a
© 2009 IXYS All rights reserved
1-8
MUBW 75-17 T8
Output Inverter T1 - T6
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
P
tot
Symbol
Conditions
T
VJ
= 25°C to 150°C
Continuous
T
C
= 25°C
T
C
= 80°C
T
C
= 80°C; t
p
= 1 ms
T
C
= 25°C
Conditions
Maximum Ratings
1700
±
20
113
80
150
450
V
V
A
A
A
W
Equivalent Circuits for Simulation
Conduction
I
V
0
R
0
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
2.0
2.4
5
2.0
400
6.6
850
300
60
850
500
30
25
V
CEK
< V
CES
- L
S
di/dt
10
0.28
max.
2.4
6.5
0.8
V
V
V
mA
mA
nA
nF
nC
ns
ns
ns
ns
mJ
mJ
V
µs
K/W
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
T1-T6
V
0
= 1.0 V; R
0
= 17 mW
T7
V
0
= 1.0 V; R
0
= 28 mW
Diode (typ. at T
J
= 125°C)
D1-D6
V
0
= 1.4 V; R
0
= 11 mW
D7
V
0
= 1.65 V; R
0
= 37 mW
D11-D16
V
0
= 0.85 V; R
0
= 2.8 mW
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
iss
Q
Gon
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
RBSOA
t
SC
(SCSOA)
R
thJC
I
C
= 75 A; V
GE
= 15 V
I
C
= 3 mA; V
GE
= V
CE
T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= V
CES
;
V
GE
= 0 V
T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 900 V; V
GE
= 15 V; I
C
= 75 A
Inductive load, T
VJ
= 125°C
V
CE
= 900 V; I
C
= 75 A
V
GE
= ±
15 V; R
G
= 18
Ω
I
C
= I
CM
; V
GE
= 15 V
R
G
= 18
Ω; T
VJ
= 125°C
V
CE
= 1000 V; V
GE
=
±
15 V; R
G
= 18
Ω
t
P
< 10 µs; non-repetitive; T
VJ
= 125°C
Output Inverter D1 - D6
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
Q
rr
t
rr
E
rec
R
thJC
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 75 A;
T
VJ
= 25°C
T
VJ
= 125°C
Maximum Ratings
92
63
A
A
Characteristic Values
min.
typ.
2.2
2.3
95
20
800
10
0.4
max.
2.9
V
V
A
µC
ns
mJ
K/W
I
F
= 75 A; di
F
/dt = -1400 A/µs;
T
VJ
= 125°C; V
R
= 900 V; V
GE
= 0 V
(per diode)
IXYS reserves the right to change limits, test conditions and dimensions.
20090826a
© 2009 IXYS All rights reserved
2-8
MUBW 75-17 T8
Brake Chopper T7
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
P
tot
Symbol
Conditions
T
VJ
= 25°C to 150°C
Continuous
T
C
= 25°C
T
C
= 80°C
T
C
= 80°C; t
p
= 1 ms
T
C
= 25°C
Conditions
Maximum Ratings
1700
±
20
48
34
60
200
V
V
A
A
A
W
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
1.9
2.1
5
0.6
400
4.4
600
190
45
970
340
7.5
8.5
V
CEK
< V
CES
- L
S
di/dt
10
0.62
max.
2.2
6.5
0.3
V
V
V
mA
mA
nA
nF
nC
ns
ns
ns
ns
mJ
mJ
V
µs
K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
Gon
t
d(on)
t
r
t
d(off)
t
f
E
off
E
on
RBSOA
t
SC
(SCSOA)
R
thJC
I
C
= 30 A; V
GE
= 15 V
I
C
= 2 mA; V
GE
= V
CE
T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= V
CES
;
V
GE
= 0 V
T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 900 V; V
GE
= 15 V; I
C
= 30 A
Inductive load, T
VJ
= 125°C
V
CE
= 900 V; I
C
= 30 A
V
GE
= ±
15 V; R
G
= 45
Ω
I
C
= I
CM
; V
GE
= 15 V
R
G
= 27 Ω; T
VJ
= 125°C
V
CE
= 900 V; V
GE
=
±
15 V; R
G
= 45
Ω
t
P
< 10 µs; non-repetitive; T
VJ
= 125°C
Brake Chopper D7
Symbol
V
RRM
I
F25
I
F80
Symbol
V
F
I
R
I
RM
t
rr
R
thJC
Conditions
T
VJ
= 25°C to 150°C
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 30 A;
V
R
= V
RRM
;
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
Maximum Ratings
1700
30
21
V
A
A
Characteristic Values
min.
typ.
2.5
2.6
0.2
38
670
0.9
max.
3.3
0.05
V
V
mA
mA
A
ns
K/W
I
F
= 30 A; di
F
/dt = -700 A/µs; T
VJ
= 125°C
V
R
= 900 V
(per diode)
IXYS reserves the right to change limits, test conditions and dimensions.
20090826a
© 2009 IXYS All rights reserved
3 - 8
MUBW 75-17 T8
Temperature Sensor NTC
Symbol
R
25
B
25/50
Module
Symbol
T
VJ
T
JM
T
stg
V
ISO
M
d
Symbol
R
therm-chip
d
S
d
A
R
thCH
Weight
Dimensions in mm (1 mm = 0.0394")
Conditions
operating
Maximum Ratings
-40...+125
+150
-40...+125
3400
3 - 6
°C
°C
°C
V~
Nm
Conditions
T = 25°C
Characteristic Values
min.
4.75
typ.
5.0
3375
max.
5.25
kΩ
K
I
ISOL
< 1 mA; 50/60 Hz; 1 min.
Mounting torque (M5)
Conditions
Resistance terminal to chip
Creepage distance on surface
Strike distance in air
with heatsink compound
12.7
9.6
0.01
300
Characteristic Values
min.
typ.
7
max.
mW
mm
mm
K/W
g
IXYS reserves the right to change limits, test conditions and dimensions.
20090826a
© 2009 IXYS All rights reserved
4-8
MUBW 75-17 T8
Input Rectifier Bridge D11 - D16
700
140
120
100
600
500
50Hz, 80% V
RRM
10
4
I
F
[A]
I
FSM
80
60
40
20
0
0.0
T
VJ
= 125°C
T
VJ
= 25°C
400
T
VJ
= 45°C
2
It
[A]
300
200
100
0
0.01
[A s]
T
VJ
= 150°C
2
T
VJ
= 45°C
T
VJ
= 150°C
1
10
3
1
2
3
4 5 6 7 8 910
0.5
1.0
1.5
2.0
2.5
0.1
V
F
[V]
t
[s]
t
[ms]
Fig. 1 Typ. forward current vs.
voltage drop per diode
400
350
300
Fig. 2 Surge overload current
Fig. 3 I
2
t versus time per diode
160
140
P
tot
250
[W]
200
150
100
50
0
0
20
40
60
80
100 120 140 160 20
0
[A]
40
60
R
thA
:
5.0 K/W
2.5 K/W
1.5 K/W
1.0 K/W
0.75 K/W
0.5 K/W
120
100
I
d(AV)
80
[A]
60
40
20
0
80 100 120 140 160
0
20 40 60 80 100 120 140 160
I
d(AV)M
T
amb
[°C]
T
C
[°C]
Fig. 4 Power dissipation vs. direct output current & amb. temperature, sin 180°
Fig. 5 Max. forward current vs.
case temperature
1.0
P
V
R
th1
C
th1
R
th2
C
th2
T
C
T
J
0.8
0.6
Z
thJC
[K/W] 0.4
R
i
1
2
3
4
5
1
10
100
t
[ms]
1000
10000
t
i
0.0085
0.0017
0.045
0.85
0.33
0.049
0.012
0.465
0.105
0.32
0.2
0.0
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, test conditions and dimensions.
20090826a
© 2009 IXYS All rights reserved
5-8
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