Advanced Technical Information
MITB10WB1200TMH
Brake
Chopper
Three Phase
Inverter
= 17 A
Converter - Brake - Inverter
Module
Low Loss Trench IGBT
Three Phase
Rectifier
I
DAVM25
=
I
FSM
V
RRM
= 1600 V V
CES
= 1200 V V
CES
= 1200 V
90 A I
C25
= 17 A I
C25
= 300 A V
CE(sat)
= 1.9 V V
CE(sat)
= 1.9 V
Part name
(Marking on product)
MITB10WB1200TMH
P P1
D8 D10 D12
NTC1
T1
D7
D1
T3
D3
T5
D5
G1
B
T7
T2
D2
G3
U
T4
D4
G5
V
T6
D6
L1
L2
L3
D9 D11 D13
NTC2
W
GB
G2
G4
G6
E72873
Pin configuration see outlines.
N
NB
EU
EV
EW
Features:
• High level of integration - only one
power semiconductor module required
for the whole drive
• Inverter with low loss Trench IGBTs
- very low saturation voltage
- positive temperature coefficient
- short tail current
• Epitaxial free wheeling diodes with
hiperfast soft reverse recovery
• Temperature sense included
Application:
• AC motor drives
• Pumps, Fans
• Washing machines
• Air-conditioning system
• Inverter and power supplies
Package:
• "Mini" package
• Assembly height is 17 mm
• Insulated base plate
• Pins suitable for wave soldering and
PCB mounting
• Assembly clips available
- IXKU 5-505 screw clamp
- IXRB 5-506 click clamp
• UL registered E72873
IXYS reserves the right to change limits, test conditions and dimensions.
20100906b
© 2010 IXYS All rights reserved
1-8
Advanced Technical Information
MITB10WB1200TMH
Ouput Inverter T1 - T6
Ratings
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
RBSOA
I
SC
(SCSOA)
R
thJC
R
thCH
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
T
VJ
= 150°C
continuous
transient
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
= 10 A; V
GE
= 15 V
I
C
= 0.3 A; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
GE
= ±20 V
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 10 A
inductive load
V
CE
= 600 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 100
W
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
min.
typ.
max.
1200
±20
±30
17
12
70
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
pF
nC
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
V
A
1.9
2.3
5
5.5
0.8
2.2
6.5
0.6
150
600
54
55
30
320
200
0.9
0.75
60
35
360
340
1.55
1.1
V
CEK
< V
CES
-L
S
·d
I
/dt
40
1.9
0.65
inductive load
V
CE
= 600 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 100
W
T
VJ
= 125°C
V
GE
= ±15 V; R
G
= 100
W;
I
C
= 20 A; T
VJ
= 125°C
V
CE
= 720 V; V
GE
= ±15 V;
T
VJ
= 125°C
R
G
= 100
W;
t
p
= 10 µs; non-repetitive
(per IGBT)
K/W
K/W
Output Inverter D1 - D6
Ratings
Symbol
V
RRM
I
F25
I
F80
V
F
Q
rr
I
RM
t
rr
E
rec
R
thJC
R
thCH
Definitions
max. repetitve reverse voltage
forward current
forward voltage
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
T
VJ
= 150°C
T
C
= 25°C
T
C
= 80°C
I
F
= 10 A; V
GE
= 0 V
V
R
= 600 V
di
F
/dt = -300 A/µs
I
F
= 10 A; V
GE
= 0 V
(per diode)
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 125°C
min.
typ.
max.
1200
24
16
Unit
V
A
A
V
V
µC
A
ns
mJ
2.0
1.6
1.9
12.8
335
0.54
2.4
1.6
0.55
T
C
= 25°C unless otherwise stated
K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
20100906b
© 2010 IXYS All rights reserved
2-8
Advanced Technical Information
MITB10WB1200TMH
Brake T7
Ratings
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
RBSOA
I
SC
(SCSOA)
R
thJC
R
thCH
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
T
VJ
= 150°C
continuous
transient
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
= 10 A; V
GE
= 15 V
I
C
= 0.3 A; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
GE
= ±20 V
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 10 A
inductive load
V
CE
= 600 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 100
W
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
min.
typ.
max.
1200
±20
±30
17
12
70
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
pF
nC
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
V
A
1.9
2.3
5
5.5
0.8
2.2
6.5
0.6
150
600
54
55
30
320
200
0.9
0.75
60
35
360
340
1.55
1.1
V
CEK
< V
CES
-L
S
·d
I
/dt
40
1.9
0.65
inductive load
V
CE
= 600 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 100
W
T
VJ
= 125°C
V
GE
= ±15 V; R
G
= 100
W;
I
C
= 20 A; T
VJ
= 125°C
V
CE
= 720 V; V
GE
= ±15 V;
T
VJ
= 125°C
R
G
= 100
W;
t
p
= 10 µs; non-repetitive
(per IGBT)
K/W
K/W
Brake Chopper D7
Symbol
V
RRM
I
F25
I
F80
V
F
I
R
Q
rr
I
RM
t
rr
E
rec
R
thJC
R
thCH
Definitions
max. repetitive reverse voltage
forward current
forward voltage
reverse current
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
T
VJ
= 150°C
T
C
= 25°C
T
C
= 80°C
I
F
= 10 A; V
GE
= 0 V
V
R
= V
RRM
V
R
= 600 V
di
F
/dt = tbd A/µs
I
F
= 10 A; V
GE
= 0 V
(per diode)
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 125°C
min.
Ratings
typ. max.
1200
15
10
2.5
2.0
0.2
tbd
tbd
tbd
tbd
2.5
0.85
3.1
0.1
Unit
V
A
A
V
V
mA
mA
µC
A
ns
µJ
K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
T
C
= 25°C unless otherwise stated
20100906b
© 2010 IXYS All rights reserved
3-8
Advanced Technical Information
MITB10WB1200TMH
Input Rectifier Bridge D8 - D11
Symbol
V
RRM
I
FAV
I
DAVM
I
FSM
I
2
t
P
tot
V
F
I
R
R
thJC
R
thCH
Definitions
max. repetitive reverse voltage
average forward current
max. average DC output current
max. forward surge current
I
2
t value for fusing
total power dissipation
forward voltage
reverse current
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
T
VJ
= 25°C
sine 180°
rect.; d =
1
/
3
t = 10 ms; sine 50 Hz
t = 10 ms; sine 50 Hz
T
C
= 80°C
T
C
= 80°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
C
= 25°C
I
F
= 30 A
V
R
= V
RRM
(per diode)
(per diode)
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
min.
Ratings
typ. max.
1600
22
61
300
tbd
450
tbd
50
1.35
1.35
0.3
2.1
0.7
1.6
0.01
Unit
V
A
A
A
A
A
2
s
A
2
s
W
V
V
mA
mA
K/W
K/W
Temperature Sensor NTC
Symbol
R
25
B
25/50
Module
Symbol
T
VJ
T
VJM
T
stg
V
ISOL
CTI
F
C
d
S
d
A
Weight
Equivalent Circuits for Simulation
I
V
0
R
0
Definitions
resistance
Conditions
T
C
= 25°C
min.
4.75
Ratings
typ. max.
5.0
3375
5.25
Unit
kW
K
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
comparative tracking index
mounting force
creep distance on surface
strike distance through air
Conditions
min.
-40
-40
Ratings
typ. max.
125
150
125
2500
-
Unit
°C
°C
°C
V~
N
mm
mm
I
ISOL
< 1 mA; 50/60 Hz
40
12.7
12
35
80
g
Symbol
V
0
R
0
V
0
R
0
V
0
R
0
V
0
R
0
V
0
R
0
Definitions
rectifier diode
IGBT
free wheeling diode
Conditions
D8 - D13
T1 - T6
D1 - D6
T7
D7
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 125°C
min.
Ratings
typ. max.
0.9
16
1.0
125
1.15
45
1.0
125
1.4
60
Unit
V
mW
V
mW
V
mW
V
mW
V
mW
IGBT
free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions.
T
C
= 25°C unless otherwise stated
20100906b
© 2010 IXYS All rights reserved
4-8
Advanced Technical Information
MITB10WB1200TMH
Circuit Diagram
P P1
D8 D10 D12
NTC1
T1
D7
D1
T3
D3
T5
D5
G1
B
T7
T2
D2
G3
U
T4
D4
G5
V
T6
D6
L1
L2
L3
D9 D11 D13
NTC2
W
GB
G2
G4
G6
N
NB
EU
EV
EW
Outline Drawing
Ø4
14
8,15 ±0,35
Dimensions in mm (1 mm = 0.0394“)
A
20,5 ±0,50
17 ±0,35
12
0,5
55,9
40,6
12
48,26
44,45
35,56
31,75
27,94
26,37
24,13
20,32
16,51
8,89
25,6
12,4
26,6
39,6
45,6
23
17,78
10,16
8,89
6,35
2,54
P1
NB
B
GB
EW
G6
EV
G4
EU
G2
G1
U
2,2
1,2
31,75
22,86
19,05
A (2:1)
3,6
1,8
1,4
0,635
Pin positions with tolerance
Ø 0.4
P
L1
N
L2
L3
NTC1
G3
NTC2
V
G5
W
Product Marking
Part number
M
I
T
B
10
WB
1200
T
MH
= Module
= IGBT
= Trench
= Gen
3
/ low loss
= Current Rating [A]
= 6-Pack + 3~ Rectifier Bridge & Brake Unit
= Reverse Voltage [V]
= NTC
= MiniPack2
Ordering
Standard
Part Name
MITB 10 WB 1200 TMH
Marking on Product
MITB10WB1200TMH
Delivering Mode Base Qty Ordering Code
Box
20
502722
20100906b
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
5-8
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